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Theory of excitonic complexes in gated WSe$_2$ quantum dots
Authors:
Daniel Miravet,
Ludmiła Szulakowska,
Maciej Bieniek,
Marek Korkusiński,
Paweł Hawrylak
Abstract:
Single-layer quantum dot gate potential causes type-II band alignment, i.e. electrostatically confines holes and repels electrons, or vice versa. Hence, the confinement of excitons in gated type II quantum dots involves a delicate balance of the repulsion of electrons due to the gate potential with the attraction caused by the Coulomb interaction with a hole localized in the quantum dot. This work…
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Single-layer quantum dot gate potential causes type-II band alignment, i.e. electrostatically confines holes and repels electrons, or vice versa. Hence, the confinement of excitons in gated type II quantum dots involves a delicate balance of the repulsion of electrons due to the gate potential with the attraction caused by the Coulomb interaction with a hole localized in the quantum dot. This work presents a theory for neutral excitonic complexes within gated $\text{WSe}_\text{2}$ quantum dots, considering spin, valley, electronic orbitals, and many-body interactions. We analyze how the electron-hole attraction depends on a range of system parameters, such as screened Coulomb interaction, strength of confinement of holes, and repulsion of electrons. Using an atomistic tight binding model we compute valence and conduction band states within a computational box comprising over one million atoms with applied gate potential. The atomistic wavefunctions are then used to calculate direct and exchange Coulomb matrix elements for a fictitious type I quantum dot, and to obtain a spectrum of interacting electron-hole pairs. Next, we study the effect of repulsive potential, pulling away electrons from the valence hole. We determine whether electron-hole pairs are sufficiently attracted to overcome electron repulsion by the confinement potential. Finally, we compute the dipole transition between hole and electron states to obtain the absorption spectrum.
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Submitted 21 June, 2024;
originally announced June 2024.
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2024 roadmap on 2D topological insulators
Authors:
Bent Weber,
Michael S Fuhrer,
Xian-Lei Sheng,
Shengyuan A Yang,
Ronny Thomale,
Saquib Shamim,
Laurens W Molenkamp,
David Cobden,
Dmytro Pesin,
Harold J W Zandvliet,
Pantelis Bampoulis,
Ralph Claessen,
Fabian R Menges,
Johannes Gooth,
Claudia Felser,
Chandra Shekhar,
Anton Tadich,
Mengting Zhao,
Mark T Edmonds,
Junxiang Jia,
Maciej Bieniek,
Jukka I Väyrynen,
Dimitrie Culcer,
Bhaskaran Muralidharan,
Muhammad Nadeem
Abstract:
2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin-momentum locked metallic edge states - both helical and chiral - surrounding an electrically insulating bulk. Forty years since the first disc…
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2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin-momentum locked metallic edge states - both helical and chiral - surrounding an electrically insulating bulk. Forty years since the first discoveries of topological phases in condensed matter, the abstract concept of band topology has sprung into realization with several materials now available in which sizable bulk energy gaps - up to a few hundred meV - promise to enable topology for applications even at room-temperature. Further, the possibility of combining 2D TIs in heterostructures with functional materials such as multiferroics, ferromagnets, and superconductors, vastly extends the range of applicability beyond their intrinsic properties. While 2D TIs remain a unique testbed for questions of fundamental condensed matter physics, proposals seek to control the topologically protected bulk or boundary states electrically, or even induce topological phase transitions to engender switching functionality. Induction of superconducting pairing in 2D TIs strives to realize non-Abelian quasiparticles, promising avenues towards fault-tolerant topological quantum computing. This roadmap aims to present a status update of the field, reviewing recent advances and remaining challenges in theoretical understanding, materials synthesis, physical characterization and, ultimately, device perspectives.
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Submitted 20 June, 2024;
originally announced June 2024.
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Interacting holes in a gated WSe$_2$ quantum channel: valley correlations and zigzag Wigner crystal
Authors:
Jarosław Pawłowski,
Daniel Miravet,
Maciej Bieniek,
Marek Korkusinski,
Justin Boddison-Chouinard,
Louis Gaudreau,
Adina Luican-Mayer,
Pawel Hawrylak
Abstract:
We present a theory of interacting valence holes in a gate-defined one-dimensional quantum channel in a single layer of a transition metal dichalcogenide material WSe$_2$. Based on a microscopic atomistic tight-binding model and Hartree-Fock and exact configuration-interaction tools we demonstrate the possibility of symmetry-broken valley polarized states for strongly interacting holes. The interp…
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We present a theory of interacting valence holes in a gate-defined one-dimensional quantum channel in a single layer of a transition metal dichalcogenide material WSe$_2$. Based on a microscopic atomistic tight-binding model and Hartree-Fock and exact configuration-interaction tools we demonstrate the possibility of symmetry-broken valley polarized states for strongly interacting holes. The interplay between interactions, perpendicular magnetic field, and the lateral confinement asymmetry together with the strong Rashba spin-orbit coupling present in WSe$_2$ material is analyzed, and its impact on valley polarization is discussed. For weaker interactions, an investigation of the pair correlation function reveals a valley-antiferromagnetic phase. For low hole densities, a formation of a zigzag Wigner crystal phase is predicted. The impact of various hole liquid phases on transport in a high mobility quasi-one dimensional channel is discussed.
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Submitted 12 June, 2024;
originally announced June 2024.
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Atomistic theory of moiré Hofstadter's butterfly in magic-angle graphene
Authors:
Alina Wania Rodrigues,
Maciej Bieniek,
Paweł Potasz,
Daniel Miravet,
Ronny Thomale,
Marek Korkusiński,
Paweł Hawrylak
Abstract:
We present here a Hofstadter's butterfly spectrum for the magic angle twisted bilayer graphene obtained using an ab initio based multi-million atom tight-binding model. We incorporate a hexagonal boron nitride substrate and out-of-plane atomic relaxation. The effects of a magnetic field are introduced via the Peierls modification of the long-range tight-binding matrix elements and the Zeeman spin…
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We present here a Hofstadter's butterfly spectrum for the magic angle twisted bilayer graphene obtained using an ab initio based multi-million atom tight-binding model. We incorporate a hexagonal boron nitride substrate and out-of-plane atomic relaxation. The effects of a magnetic field are introduced via the Peierls modification of the long-range tight-binding matrix elements and the Zeeman spin splitting effects. A nanoribbon geometry is studied, and the quantum size effects for the sample widths up to 1 $μ$m are analyzed both for a large energy window and for the flatband around the Fermi level. For sufficiently wide ribbons, where the role of the finite geometry is minimized, we obtain and plot the Hofstadter spectrum and identify the in-gap Chern numbers by counting the total number of chiral edge states crossing these gaps. Subsequently, we examine the Wannier diagrams to identify the insulating states at charge neutrality. We establish the presence of three types of electronic states: moiré, mixed, and conventional. These states describe both the bulk Landau levels and the edge states crossing gaps in the spectrum. The evolution of the bulk moiré flatband wavefunctions in the magnetic field is investigated, predicting a decay of the electronic density from the moiré centers as the magnetic flux increases. Furthermore, the spatial properties of the three types of edge states are studied, illustrating the evolution of their localization as a function of the nanoribbon momentum.
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Submitted 4 July, 2024; v1 submitted 21 November, 2023;
originally announced November 2023.
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Interacting holes in gated WSe$_2$ quantum dots
Authors:
Daniel Miravet,
Abdulmenaf Altıntaş,
Alina Wania Rodrigues,
Maciej Bieniek,
Marek Korkusinski,
Paweł Hawrylak
Abstract:
We develop here a theory of the electronic properties of a finite number of valence holes in gated WSe$_2$ quantum dots, considering the influence of spin, valley, electronic orbitals, and many-body interactions. The single-particle wave functions are constructed by combining the spin-up and down states of the highest valence bulk bands employing a multi-million atom ab-initio based tight-binding…
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We develop here a theory of the electronic properties of a finite number of valence holes in gated WSe$_2$ quantum dots, considering the influence of spin, valley, electronic orbitals, and many-body interactions. The single-particle wave functions are constructed by combining the spin-up and down states of the highest valence bulk bands employing a multi-million atom ab-initio based tight-binding model solved in the wave-vector space, allowing to study up to 100 nm radius quantum dots atomistically. The effects of the many-body interactions are determined using the configuration interaction (CI) technique, applied up to $N = 6$ holes occupying up to 6 electronic shells with 42 orbitals. Our results show that N=2 holes are in valley and spin anti-ferromagnetic ground state, independent of the interaction strength and the quantum dot size. However, we predict that higher number of holes can undergo a transition to spontaneously broken symmetry valley and spin polarized ferromagnetic phases, highlighting the interplay between the many-body effects and the quantum dot lateral size and confining potential depth.
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Submitted 9 August, 2023;
originally announced August 2023.
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Theory of Glide Symmetry Protected Helical Edge States in WTe$_{2}$ Monolayer
Authors:
Maciej Bieniek,
Jukka I. Väyrynen,
Gang Li,
Titus Neupert,
Ronny Thomale
Abstract:
Helical edge states in quantum spin Hall (QSH) materials are central building blocks of topological matter design and engineering. Despite their principal topological protection against elastic backscattering, the level of operational stability depends on manifold parameters such as the band gap of the given semiconductor system in the 'inverted' regime, temperature, disorder, and crystal orientat…
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Helical edge states in quantum spin Hall (QSH) materials are central building blocks of topological matter design and engineering. Despite their principal topological protection against elastic backscattering, the level of operational stability depends on manifold parameters such as the band gap of the given semiconductor system in the 'inverted' regime, temperature, disorder, and crystal orientation. We theoretically investigate electronic and transport properties of QSH edge states in large gap 1-T' WTe$_{2}$ monolayers. We explore the impact of edge termination, disorder, temperature, and interactions on experimentally addressable edge state observables, such as local density of states and conductance. We show that conductance quantization can remain surprisingly robust even for heavily disordered samples because of an anomalously small edge state decay length and additional protection related to the large direct gap allowed by glide symmetry. From the simulation of temperature-dependent resistance, we find that moderate disorder enhances the stability of conductance by localizing bulk states. We evaluate the edge state velocity and Luttinger liquid parameter as functions of the chemical potential, finding prospects for physics beyond linear helical Luttinger liquids in samples with ultra-clean and well-defined edges.
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Submitted 19 September, 2022;
originally announced September 2022.
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Gate controlled quantum dots in monolayer WSe2
Authors:
Justin Boddison-Chouinard,
Alex Bogan,
Norman Fong,
Kenji Watanabe,
Takashi Taniguchi,
Sergei Studenikin,
Andrew Sachrajda,
Marek Korkusinski,
Abdulmenaf Altintas,
Maciej Bieniek,
Pawel Hawrylak,
Adina Luican-Mayer,
Louis Gaudreau
Abstract:
Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states electrically and optically, make two-dimensional (2D) transition metal dichalcogenides an emerging platform for the development of quantum devices. In this work, we…
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Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states electrically and optically, make two-dimensional (2D) transition metal dichalcogenides an emerging platform for the development of quantum devices. In this work, we fabricate devices based on heterostructures of layered 2D materials, in which we realize gate-controlled tungsten diselenide (WSe2) hole quantum dots. We discuss the observed mesoscopic transport features related to the emergence of quantum dots in the WSe2 device channel, and we compare them to a theoretical model.
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Submitted 1 August, 2021;
originally announced August 2021.
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Spin-valley qubits in gated quantum dots in a single layer of transition metal dichalcogenides
Authors:
Abdulmenaf Altıntaş,
Maciej Bieniek,
Amintor Dusko,
Marek Korkusiński,
Jarosław Pawłowski,
Paweł Hawrylak
Abstract:
We develop a microscopic and atomistic theory of electron spin-based qubits in gated quantum dots in a single layer of transition metal dichalcogenides. The qubits are identified with two degenerate locked spin and valley states in a gated quantum dot. The two-qubit states are accurately described using a multi-million atom tight-binding model solved in wavevector space. The spin-valley locking an…
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We develop a microscopic and atomistic theory of electron spin-based qubits in gated quantum dots in a single layer of transition metal dichalcogenides. The qubits are identified with two degenerate locked spin and valley states in a gated quantum dot. The two-qubit states are accurately described using a multi-million atom tight-binding model solved in wavevector space. The spin-valley locking and strong spin-orbit coupling result in two degenerate states, one of the qubit states being spin-down located at the $+K$ valley of the Brillouin zone, and the other state located at the $-K$ valley with spin up. We describe the qubit operations necessary to rotate the spin-valley qubit as a combination of the applied vertical electric field, enabling spin-orbit coupling in a single valley, with a lateral strongly localized valley-mixing gate.
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Submitted 7 October, 2021; v1 submitted 29 June, 2021;
originally announced June 2021.
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Valley two-qubit system in a MoS$_2$-monolayer gated double quantum dot
Authors:
J. Pawłowski,
M. Bieniek,
T. Woźniak
Abstract:
We explore a two-qubit system defined on valley isospins of two electrons confined in a gate-defined double quantum dot created within a MoS$_2$ monolayer flake. We show how to initialize, control, interact and read out such valley qubits only by electrical means using voltages applied to the local planar gates, which are layered on the top of the flake. By demonstrating the two-qubit exchange or…
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We explore a two-qubit system defined on valley isospins of two electrons confined in a gate-defined double quantum dot created within a MoS$_2$ monolayer flake. We show how to initialize, control, interact and read out such valley qubits only by electrical means using voltages applied to the local planar gates, which are layered on the top of the flake. By demonstrating the two-qubit exchange or readout via the Pauli blockade, we prove that valley qubits in transition-metal-dichalcogenide semiconductors family fulfill the universality criteria and represent a scalable quantum computing platform. Our numerical experiments are based on the tight-binding model for a MoS$_2$ monolayer, which gives single-electron eigenstates that are then used to construct a basis of Slater-determinants for the two-electron configuration space. We express screened electron-electron interactions in this basis by calculating the Coulomb matrix elements using localized Slater-type orbitals. Then we solve the time-dependent Schrödinger equation and obtain an exact time-evolution of the two-electron system. During the evolution we simultaneously solve the Poison equation, finding the confinement potential controlled via voltages applied to the gates.
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Submitted 16 July, 2021; v1 submitted 19 February, 2021;
originally announced February 2021.
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VECMAtk: A Scalable Verification, Validation and Uncertainty Quantification Toolkit for Scientific Simulations
Authors:
D. Groen,
H. Arabnejad,
V. Jancauskas,
W. N. Edeling,
F. Jansson,
R. A. Richardson,
J. Lakhlili,
L. Veen,
B. Bosak,
P. Kopta,
D. W. Wright,
N. Monnier,
P. Karlshoefer,
D. Suleimenova,
R. Sinclair,
M. Vassaux,
A. Nikishova,
M. Bieniek,
O. O. Luk,
M. Kulczewski,
E. Raffin,
D. Crommelin,
O. Hoenen,
D. P. Coster,
T. Piontek
, et al. (1 additional authors not shown)
Abstract:
We present the VECMA toolkit (VECMAtk), a flexible software environment for single and multiscale simulations that introduces directly applicable and reusable procedures for verification, validation (V&V), sensitivity analysis (SA) and uncertainty quantification (UQ). It enables users to verify key aspects of their applications, systematically compare and validate the simulation outputs against ob…
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We present the VECMA toolkit (VECMAtk), a flexible software environment for single and multiscale simulations that introduces directly applicable and reusable procedures for verification, validation (V&V), sensitivity analysis (SA) and uncertainty quantification (UQ). It enables users to verify key aspects of their applications, systematically compare and validate the simulation outputs against observational or benchmark data, and run simulations conveniently on any platform from the desktop to current multi-petascale computers. In this sequel to our paper on VECMAtk which we presented last year, we focus on a range of functional and performance improvements that we have introduced, cover newly introduced components, and applications examples from seven different domains such as conflict modelling and environmental sciences. We also present several implemented patterns for UQ/SA and V&V, and guide the reader through one example concerning COVID-19 modelling in detail.
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Submitted 11 October, 2020; v1 submitted 8 October, 2020;
originally announced October 2020.
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Valley and spin polarized broken symmetry states of interacting electrons in gated MoS$_2$ quantum dots
Authors:
Ludmila Szulakowska,
Moritz Cygorek,
Maciej Bieniek,
Pawel Hawrylak
Abstract:
Understanding strongly interacting electrons enables the design of materials, nanostructures and devices. Developing this understanding relies on the ability to tune and control electron-electron interactions by, e.g., confining electrons to atomically thin layers of 2D crystals with reduced screening. The interplay of strong interactions on a hexagonal lattice with two nonequivalent valleys, topo…
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Understanding strongly interacting electrons enables the design of materials, nanostructures and devices. Developing this understanding relies on the ability to tune and control electron-electron interactions by, e.g., confining electrons to atomically thin layers of 2D crystals with reduced screening. The interplay of strong interactions on a hexagonal lattice with two nonequivalent valleys, topological moments, and the Ising-like spin-orbit interaction gives rise to a variety of phases of matter corresponding to valley and spin polarized broken symmetry states. In this work we describe a highly tunable strongly interacting system of electrons laterally confined to monolayer transition metal dichalcogenide MoS$_2$ by metalic gates. We predict the existence of valley and spin polarized broken symmetry states tunable by the parabolic confining potential using exact diagonalization techniques for up to $N=6$ electrons. We find that the ground state is formed by one of two phases, either both spin and valley polarized or valley unpolarised but spin intervalley antiferromagnetic, which compete as a function of electronic shell spacing. This finding can be traced back to the combined effect of Ising-like spin-orbit coupling and weak intervalley exchange interaction. These results provide an explanation for interaction-driven symmetry-breaking effects in valley systems and highlight the important role of electron-electron interactions for designing valleytronic devices.
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Submitted 9 May, 2020;
originally announced May 2020.
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Fine structure of negatively charged and neutral excitons in monolayer MoS$_{2}$
Authors:
Joanna Jadczak,
Joanna Kutrowska-Girzycka,
Maciej Bieniek,
Tomasz Kazimierczuk,
Piotr Kossacki,
Janina Schindler,
Jörg Debus,
Kenji Watanabe,
Takashi Taniguchi,
Ching-Hwa Ho,
Arkadiusz Wójs,
Paweł Hawrylak,
Leszek Bryja
Abstract:
We present experimental and theoretical results on the high-quality single-layer MoS$_{2}$ which reveal the fine structure of charged excitons, i.e., trions. In the emission spectra we resolve and identify two trion peaks, T$_{1}$ and T$_{2}$, resembling the pair of singlet and triplet trion peaks (T$_S$ and T$_{T}$) in tungsten-based materials. However, in polarization-dependent photoluminescence…
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We present experimental and theoretical results on the high-quality single-layer MoS$_{2}$ which reveal the fine structure of charged excitons, i.e., trions. In the emission spectra we resolve and identify two trion peaks, T$_{1}$ and T$_{2}$, resembling the pair of singlet and triplet trion peaks (T$_S$ and T$_{T}$) in tungsten-based materials. However, in polarization-dependent photoluminescence measurements we identify these peaks as novel intra- and inter-valley singlet trions, constituting the trion fine structure distinct from that already known in bright and dark 2D materials with large conduction-band splitting induced by the spin-orbit coupling. We show that the trion energy splitting in MoS$_{2}$ is a sensitive probe of inter- and intra-valley carrier interaction. With additional support from theory we claim that the existence of these singlet trions combined with an anomalous excitonic g-factor and the characteristic temperature dependence of the emission spectra together suggest that monolayer MoS$_{2}$ has a dark excitonic ground state, despite having "bright" single-particle arrangement of spin-polarized conduction bands.
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Submitted 23 March, 2020; v1 submitted 22 January, 2020;
originally announced January 2020.
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Band nesting and exciton spectrum in monolayer MoS$_2$
Authors:
Maciej Bieniek,
Ludmiła Szulakowska,
Paweł Hawrylak
Abstract:
We discuss here the effect of band nesting and topology on the spectrum of excitons in a single layer of MoS$_2$, a prototype transition metal dichalcogenide material. We solve for the single particle states using the ab initio based tight-binding model containing metal $d$ and sulfur $p$ orbitals. The metal orbitals contribution evolving from $K$ to $Γ$ points results in conduction-valence band n…
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We discuss here the effect of band nesting and topology on the spectrum of excitons in a single layer of MoS$_2$, a prototype transition metal dichalcogenide material. We solve for the single particle states using the ab initio based tight-binding model containing metal $d$ and sulfur $p$ orbitals. The metal orbitals contribution evolving from $K$ to $Γ$ points results in conduction-valence band nesting and a set of second minima at $Q$ points in the conduction band. There are three $Q$ minima for each $K$ valley. We accurately solve the Bethe-Salpeter equation including both $K$ and $Q$ points and obtain ground and excited exciton states. We determine the effects of the electron-hole single particle energies including band nesting, direct and exchange screened Coulomb electron-hole interactions and resulting topological magnetic moments on the exciton spectrum. The ability to control different contributions combined with accurate calculations of the ground and excited exciton states allows for the determination of the importance of different contributions and a comparison with effective mass and $k\cdot p$ massive Dirac fermion models.
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Submitted 29 February, 2020; v1 submitted 2 January, 2020;
originally announced January 2020.
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The effect of valley, spin and band nesting on the electronic properties of gated quantum dots in a single layer of transition metal dichalcogenides (TMDCs)
Authors:
Maciej Bieniek,
Ludmila Szulakowska,
Pawel Hawrylak
Abstract:
We present here results of atomistic theory of electrons confined by metallic gates in a single layer of transition metal dichalcogenides. The electronic states are described by the tight-binding model and computed using a computational box including up to million atoms with periodic boundary conditions and parabolic confining potential due to external gates embedded in it. With this methodology a…
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We present here results of atomistic theory of electrons confined by metallic gates in a single layer of transition metal dichalcogenides. The electronic states are described by the tight-binding model and computed using a computational box including up to million atoms with periodic boundary conditions and parabolic confining potential due to external gates embedded in it. With this methodology applied to MoS2, we find a twofold degenerate energy spectrum of electrons confined in the two non-equivalent K-valleys by the metallic gates as well as six-fold degenerate spectrum associated with Q-valleys. We compare the electron spectrum with the energy levels of electrons confined in GaAs/GaAlAs and in self-assembled quantum dots. We discuss the role of spin splitting and topological moments on the K and Q valley electronic states in quantum dots with sizes comparable to experiment.
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Submitted 12 December, 2019; v1 submitted 22 July, 2019;
originally announced July 2019.
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Electronic structure, magnetoexcitons and valley polarized electron gas in 2D crystals
Authors:
Ludmila Szulakowska,
Maciej Bieniek,
Pawel Hawrylak
Abstract:
We describe here recent work on the electronic properties, magnetoexcitons and valley polarised electron gas in 2D crystals. Among 2D crystals, monolayer $MoS_2$ has attracted significant attention as a direct-gap 2D semiconductor analogue of graphene. The crystal structure of monolayer $MoS_2$ breaks inversion symmetry and results in K valley selection rules allowing to address individual valleys…
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We describe here recent work on the electronic properties, magnetoexcitons and valley polarised electron gas in 2D crystals. Among 2D crystals, monolayer $MoS_2$ has attracted significant attention as a direct-gap 2D semiconductor analogue of graphene. The crystal structure of monolayer $MoS_2$ breaks inversion symmetry and results in K valley selection rules allowing to address individual valleys optically. Additionally, the band nesting near Q points is responsible for enhancing the optical response of $MoS_2$.We show that at low energies the electronic structure of $MoS_2$ is well approximated by the massive Dirac Fermion model. We focus on the effect of magnetic field on optical properties of $MoS_2$. We discuss the Landau level structure of massive Dirac fermions in the two non-equivalent valleys and resulting valley Zeeman splitting. The effects of electron-electron interaction on the valley Zeeman splitting and on the magneto-exciton spectrum are described. We show the changes in the absorption spectrum as the self-energy, electron-hole exchange and correlation effects are included. Finally, we describe the valley-polarised electron gas in $WS_2$ and its optical signature in finite magnetic fields.
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Submitted 29 October, 2018;
originally announced October 2018.
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3D modelling of self-organized patterns of spots on anodes of DC glow discharge
Authors:
M. S. Bieniek,
P. G. C. Almeida,
M. S. Benilov
Abstract:
Self-organized patterns of spots on a at metallic anode in a cylindrical glow dis- charge tube are simulated self-consistently. A standard model of a glow discharge is used, comprising conservation and transport equations for a single species of ion and electrons, written with the use of the drift-diffusion and local-field approximations, and the Poisson equation. The computation domain is the reg…
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Self-organized patterns of spots on a at metallic anode in a cylindrical glow dis- charge tube are simulated self-consistently. A standard model of a glow discharge is used, comprising conservation and transport equations for a single species of ion and electrons, written with the use of the drift-diffusion and local-field approximations, and the Poisson equation. The computation domain is the region from the anode to the discharge column; only processes in the near-anode region are considered. Multiple solutions, existing in the same range of discharge current and describing modes with and without anode spots, are computed by means of a stationary solver. The computed spots exhibited unexpected behavior. A reversal of the local anode current density in the middle of each of the spots was found, i.e. mini-cathodes are formed inside the spots. The solutions do not fit into the conventional pattern of self-organization in bistable nonlinear dissipative systems; e.g. the modes are not joined by bifurcations.
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Submitted 26 February, 2018; v1 submitted 21 February, 2018;
originally announced February 2018.
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Bifurcations in the theory of current transfer to cathodes of dc discharges and observations of transitions between different modes
Authors:
M. S. Bieniek,
D. Santos,
P. G. C. Almeida,
M. S. Benilov
Abstract:
General scenarios of transitions between different spot patterns on electrodes of dc gas discharges and their relation to bifurcations of steady-state solutions are analyzed. In the case of cathodes of arc discharges, it is shown that any transition between different modes of current transfer is related to a bifurcation of steady-state solutions. In particular, transitions between diffuse and spot…
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General scenarios of transitions between different spot patterns on electrodes of dc gas discharges and their relation to bifurcations of steady-state solutions are analyzed. In the case of cathodes of arc discharges, it is shown that any transition between different modes of current transfer is related to a bifurcation of steady-state solutions. In particular, transitions between diffuse and spot modes on axially symmetric cathodes, frequently observed in the experiment, represent an indication of the presence of pitchfork or fold bifurcations of steady-state solutions. Experimental observations of transitions on cathodes of dc glow microdischarges are analyzed and those potentially related to bifurcations of steady-state solutions are identified. The relevant bifurcations are investigated numerically and the computed patterns are found to conform to those observed in the course of the corresponding transitions in the experiment.
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Submitted 25 February, 2018; v1 submitted 20 February, 2018;
originally announced February 2018.
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Topological phases in Bi/Sb planar and buckled honeycomb monolayers
Authors:
N. Nouri,
M. Bieniek,
M. Brzezinska,
M. Modarresi,
S. Zia Borujeni,
Gh. Rashedi,
A. Wojs,
P. Potasz
Abstract:
We investigate topological phases in two-dimensional Bi/Sb honeycomb crystals considering planar, buckled, freestanding and deposited on a substrate structures. We use the multi-orbital tight-binding model and compare results with density functional theory methods. We distinguish topological phases by calculating topological invariants, analyze edge states of systems in a ribbon geometry and by lo…
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We investigate topological phases in two-dimensional Bi/Sb honeycomb crystals considering planar, buckled, freestanding and deposited on a substrate structures. We use the multi-orbital tight-binding model and compare results with density functional theory methods. We distinguish topological phases by calculating topological invariants, analyze edge states of systems in a ribbon geometry and by looking at their entanglement spectra. We show that weak coupling to the substrate of buckled and planar crystals is sufficient to lead to a transition to the $Z_2$ topological insulator phase. Topological crystalline insulator (TCI) phase exhibits a pair of edge states in the semi-infinite geometry and in the entanglement spectrum. Transport calculations for TCI phases show robust quantized conductance even in a presence of symmetry-breaking disorder.
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Submitted 12 February, 2018; v1 submitted 3 November, 2017;
originally announced November 2017.
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Entanglement entropy and entanglement spectrum of Bi$_{1-x}$Sb$_{x}$ (111) bilayers
Authors:
M. Brzezińska,
M. Bieniek,
T. Woźniak,
P. Potasz,
A. Wójs
Abstract:
We investigate topological properties of Bi$_{1-x}$Sb$_{x}$ bilayers in the (111) plane using entanglement measures. Electronic structures are studied using multi-orbital tight-binding model, with structural stability confirmed through first-principles calculations. Topologically non-trivial nature of Bi bilayer is proved by the presence of spectral flow in the entanglement spectrum. We consider t…
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We investigate topological properties of Bi$_{1-x}$Sb$_{x}$ bilayers in the (111) plane using entanglement measures. Electronic structures are studied using multi-orbital tight-binding model, with structural stability confirmed through first-principles calculations. Topologically non-trivial nature of Bi bilayer is proved by the presence of spectral flow in the entanglement spectrum. We consider topological phase transitions driven by a composition change $x$, an applied external electric field in pure Bi, and strain in pure Sb. Composition- and strain-induced phase transitions reveal a finite discontinuity in the entanglement entropy. However, this quantity remains a continuous function of electric field strength, but shows a discontinuity in the first derivative. We relate the difference in behavior of the entanglement entropy to breaking of the inversion symmetry in the last case.
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Submitted 12 September, 2017;
originally announced September 2017.
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Band nesting, massive Dirac Fermions and Valley Lande and Zeeman effects in transition metal dichalcogenides: a tight-binding model
Authors:
M. Bieniek,
M. Korkusiński,
L. Szulakowska,
P. Potasz,
I. Ozfidan,
P. Hawrylak
Abstract:
We present here the minimal tight--binding model for a single layer of transition metal dichalcogenides (TMDCs) MX$_{2}$ (M--metal, X--chalcogen) which illuminates the physics and captures band nesting, massive Dirac Fermions and Valley Lande and Zeeman magnetic field effects. TMDCs share the hexagonal lattice with graphene but their electronic bands require much more complex atomic orbitals. Usin…
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We present here the minimal tight--binding model for a single layer of transition metal dichalcogenides (TMDCs) MX$_{2}$ (M--metal, X--chalcogen) which illuminates the physics and captures band nesting, massive Dirac Fermions and Valley Lande and Zeeman magnetic field effects. TMDCs share the hexagonal lattice with graphene but their electronic bands require much more complex atomic orbitals. Using symmetry arguments, a minimal basis consisting of 3 metal d--orbitals and 3 chalcogen dimer p--orbitals is constructed. The tunneling matrix elements between nearest neighbor metal and chalcogen orbitals are explicitly derived at $K$, $-K$ and $Γ$ points of the Brillouin zone. The nearest neighbor tunneling matrix elements connect specific metal and sulfur orbitals yielding an effective $6\times 6$ Hamiltonian giving correct composition of metal and chalcogen orbitals but not the direct gap at $K$ points. The direct gap at $K$, correct masses and conduction band minima at $Q$ points responsible for band nesting are obtained by inclusion of next neighbor Mo--Mo tunneling. The parameters of the next nearest neighbor model are successfully fitted to MX$_2$ (M=Mo, X=S) density functional (DFT) ab--initio calculations of the highest valence and lowest conduction band dispersion along $K-Γ$ line in the Brillouin zone. The effective two--band massive Dirac Hamiltonian for MoS$_2$, Lande g--factors and valley Zeeman splitting are obtained.
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Submitted 8 May, 2017;
originally announced May 2017.
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Stability of topological properties of bismuth (111) bilayer
Authors:
M. Bieniek,
T. Wozniak,
P. Potasz
Abstract:
We investigate electronic and transport properties of bismuth (111) bilayer in the context of stability of its topological properties against different perturbations. The effects of spin-orbit coupling variations, geometry relaxation and an interaction with a substrate are considered. Transport properties are studied in the presence of Anderson disorder. Band structure calculations are performed w…
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We investigate electronic and transport properties of bismuth (111) bilayer in the context of stability of its topological properties against different perturbations. The effects of spin-orbit coupling variations, geometry relaxation and an interaction with a substrate are considered. Transport properties are studied in the presence of Anderson disorder. Band structure calculations are performed within multi-orbital tight-binding model and density functional theory methods. A band inversion process in bismuth (111) infinite bilayer and an evolution of edge states dispersion in ribbons as a function of spin-orbit coupling strength are analyzed. A significant change of orbital composition of the conduction and valence bands during a topological phase transition is observed. A topological phase is shown to be robust when the effect of geometry relaxation is taken into account. An interaction with a substrate has similar effect to an external perpendicular electric field. The robust quantized conductance is observed when the Fermi energy lies within the bulk energy gap, where only two counter-propagating edge states are present. For energies where the Fermi level crosses more in-gap states, a scattering is possible between channels lying close in $k-$space. When the energy of edge states overlaps with bulk states, no topological protection is observed.
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Submitted 5 December, 2016; v1 submitted 2 December, 2016;
originally announced December 2016.
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Modelling cathode spots in glow discharges in the cathode boundary layer geometry
Authors:
P. G. C. Almeida,
M. S. Benilov,
M. S. Bieniek
Abstract:
Self-organized patterns of cathode spots in glow discharges are computed in the cathode boundary layer geometry, which is the one employed in most of the experiments reported in the literature. The model comprises conservation and transport equations of electrons and a single ion species, written in the drift-diffusion and local-field approximations, and Poisson's equation. Multiple solutions exis…
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Self-organized patterns of cathode spots in glow discharges are computed in the cathode boundary layer geometry, which is the one employed in most of the experiments reported in the literature. The model comprises conservation and transport equations of electrons and a single ion species, written in the drift-diffusion and local-field approximations, and Poisson's equation. Multiple solutions existing for the same value of the discharge current and describing modes with different configurations of cathode spots are computed by means of a stationary solver. The computed solutions are compared to their counterparts for plane-parallel electrodes, and experiments. All of the computed spot patterns have been observed in the experiment.
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Submitted 27 October, 2015; v1 submitted 26 October, 2015;
originally announced October 2015.
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The distribution of the spine of a Fleming-Viot type process
Authors:
Mariusz Bieniek,
Krzysztof Burdzy
Abstract:
We show uniqueness of the spine of a Fleming-Viot particle system under minimal assumptions on the driving process. If the driving process is a continuous time Markov process on a finite space, we show that asymptotically, when the number of particles goes to infinity, the branching rate for the spine is twice that of a generic particle in the system, and every side branch has the distribution of…
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We show uniqueness of the spine of a Fleming-Viot particle system under minimal assumptions on the driving process. If the driving process is a continuous time Markov process on a finite space, we show that asymptotically, when the number of particles goes to infinity, the branching rate for the spine is twice that of a generic particle in the system, and every side branch has the distribution of the unconditioned generic branching tree.
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Submitted 24 July, 2015;
originally announced July 2015.
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Extinction of Fleming-Viot-type particle systems with strong drift
Authors:
Mariusz Bieniek,
Krzysztof Burdzy,
Soumik Pal
Abstract:
We consider a Fleming-Viot-type particle system consisting of independently moving particles that are killed on the boundary of a domain. At the time of death of a particle, another particle branches. If there are only two particles and the underlying motion is a Bessel process on $(0,\infty)$, both particles converge to 0 at a finite time if and only if the dimension of the Bessel process is less…
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We consider a Fleming-Viot-type particle system consisting of independently moving particles that are killed on the boundary of a domain. At the time of death of a particle, another particle branches. If there are only two particles and the underlying motion is a Bessel process on $(0,\infty)$, both particles converge to 0 at a finite time if and only if the dimension of the Bessel process is less than 0. If the underlying diffusion is Brownian motion with a drift stronger than (but arbitrarily close to, in a suitable sense) the drift of a Bessel process, all particles converge to 0 at a finite time, for any number of particles.
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Submitted 31 October, 2011;
originally announced November 2011.
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Non-extinction of a Fleming-Viot particle model
Authors:
Mariusz Bieniek,
Krzysztof Burdzy,
Sam Finch
Abstract:
We consider a branching particle model in which particles move inside a Euclidean domain according to the following rules. The particles move as independent Brownian motions until one of them hits the boundary. This particle is killed but another randomly chosen particle branches into two particles, to keep the population size constant. We prove that the particle population does not approach the…
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We consider a branching particle model in which particles move inside a Euclidean domain according to the following rules. The particles move as independent Brownian motions until one of them hits the boundary. This particle is killed but another randomly chosen particle branches into two particles, to keep the population size constant. We prove that the particle population does not approach the boundary simultaneously in a finite time in some Lipschitz domains. This is used to prove a limit theorem for the empirical distribution of the particle family.
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Submitted 12 May, 2009;
originally announced May 2009.
