Showing 1–14 of 14 results for author: Chae, S C

Phonon-pair-driven Ferroelectricity Causes Costless Domain-walls and Bulk-boundary Duality

Authors: Hyun-Jae Lee, Kyoung-June Go, Pawan Kumar, Chang Hoon Kim, Yungyeom Kim, Kyoungjun Lee, Takao Shimizu, Seung Chul Chae, Hosub Jin, Minseong Lee, Umesh Waghmare, Si-Young Choi, Jun Hee Lee

Abstract: Ferroelectric domain walls, recognized as distinct from the bulk in terms of symmetry, structure, and electronic properties, host exotic phenomena including conductive walls, ferroelectric vortices, novel topologies, and negative capacitance. Contrary to conventional understanding, our study reveals that the structure of domain walls in HfO2 closely resembles its bulk. First, our first-principles… ▽ More Ferroelectric domain walls, recognized as distinct from the bulk in terms of symmetry, structure, and electronic properties, host exotic phenomena including conductive walls, ferroelectric vortices, novel topologies, and negative capacitance. Contrary to conventional understanding, our study reveals that the structure of domain walls in HfO2 closely resembles its bulk. First, our first-principles simulations unveil that the robust ferroelectricity is supported by bosonic pairing of all the anionic phonons in bulk HfO2. Strikingly, the paired phonons strongly bond with each other and successfully reach the center of the domain wall without losing their integrity and produce bulk-like domain walls. We then confirmed preservation of the bulk phonon displacements and consequently full revival of the bulk structure at domain walls via aberration-corrected STEM. The newly found duality between the bulk and the domain wall sheds light on previously enigmatic properties such as zero-energy domain walls, perfect Ising-type polar ordering, and exceptionally robust ferroelectricity at the sub-nm scales. The phonon-pairing discovered here is robust against physical boundaries such as domain walls and enables zero momentum and zero-energy cost local ferroelectric switching. This phenomenon demonstrated in Si-compatible ferroelectrics provides a novel technological platform where data storage on domain walls is as feasible as that within the domains, thereby expanding the potential for high-density data storage and advanced ferroelectric applications. △ Less

Submitted 3 March, 2024; originally announced March 2024.

Comments: 24 pages, 4 figures

Room Temperature Ferroelectric Ferromagnet in 1D Tetrahedral Chain Network

Authors: Kyeong Tae Kang, Chang Jae Roh, Jinyoung Lim, Taewon Min, Jun Han Lee, Kyoungjun Lee, Tae Yoon Lee, Seunghun Kang, Daehee Seol, Jiwoong Kim, Hiromichi Ohta, Amit Khare, Sungkyun Park, Yunseok Kim, Seung Chul Chae, Yoon Seok Oh, Jaekwang Lee, Jaejun Yu, Jong Seok Lee, Woo Seok Choi

Abstract: Ferroelectricity occurs in crystals with broken spatial inversion symmetry. In conventional perovskite oxides, concerted ionic displacements within a three-dimensional network of transition metal-oxygen polyhedra (MOx) manifest spontaneous polarization. Meanwhile, some two-dimensional networks of MOx can foster geometric ferroelectricity with magnetism, owing to the distortion of the polyhedra. Be… ▽ More Ferroelectricity occurs in crystals with broken spatial inversion symmetry. In conventional perovskite oxides, concerted ionic displacements within a three-dimensional network of transition metal-oxygen polyhedra (MOx) manifest spontaneous polarization. Meanwhile, some two-dimensional networks of MOx can foster geometric ferroelectricity with magnetism, owing to the distortion of the polyhedra. Because of the fundamentally different mechanism of ferroelectricity in a two-dimensional network, one can further challenge an uncharted mechanism of ferroelectricity in a one-dimensional channel of MOx and estimate its feasibility. This communication presents ferroelectricity and coupled ferromagnetism in a one-dimensional FeO4 tetrahedral chain network of a brownmillerite SrFeO2.5 epitaxial thin film. The result provides a new paradigm for designing low-dimensional MOx networks, which is expected to benefit the realization of macroscopic ferro-ordering materials including ferroelectric ferromagnets. △ Less

Submitted 8 May, 2019; originally announced May 2019.

Comments: 28 pages, 1 table, 3 figures, 5 supplementary figures

Journal ref: published in 2019

Evolution of the domain topology in a ferroelectric

Authors: S. C. Chae, Y. Horibe, D. Y. Jeong, N. Lee, K. Iida, M. Tanimura, S. -W. Cheong

Abstract: Topological materials, including topological insulators, magnets with Skyrmions and ferroelectrics with topological vortices, have recently attracted phenomenal attention in the materials science community. Complex patterns of ferroelectric domains in hexagonal REMnO3 (RE: rare earths) turn out to be associated with the macroscopic emergence of Z2xZ3 symmetry. The results of our depth profiling of… ▽ More Topological materials, including topological insulators, magnets with Skyrmions and ferroelectrics with topological vortices, have recently attracted phenomenal attention in the materials science community. Complex patterns of ferroelectric domains in hexagonal REMnO3 (RE: rare earths) turn out to be associated with the macroscopic emergence of Z2xZ3 symmetry. The results of our depth profiling of crystals with a self-poling tendency near surfaces reveal that the partial dislocation (i.e., wall-wall) interaction, not the interaction between vortices and antivortices, is primarily responsible for topological condensation through the macroscopic breaking of the Z2-symmetry. △ Less

Submitted 31 March, 2013; originally announced April 2013.

Ferroelectric switching dynamics of topological vortex domains in a hexagonal manganite

Authors: Myung-Geun Han, Yimei Zhu, Lijun Wu, Toshihiro Aoki, Vyacheslav Volkov, Xueyun Wang, Seung Chul Chae, Yoon Seok Oh, Sang-Wook Cheong

Abstract: Field-induced switching of ferroelectric domains with a topological vortex configuration is studied by atomic imaging and electrical biasing in an electron microscope, revealing the role of topological defects on the topologically-guided change of domain-wall pairs in a hexagonal manganite. Field-induced switching of ferroelectric domains with a topological vortex configuration is studied by atomic imaging and electrical biasing in an electron microscope, revealing the role of topological defects on the topologically-guided change of domain-wall pairs in a hexagonal manganite. △ Less

Submitted 14 March, 2013; originally announced March 2013.

Direct observation of the proliferation of ferroelectric loop domains and vortex-antivortex pairs

Authors: S. C. Chae, N. Lee, Y. Horibe, M. Tanimura, S. Mori, B. Gao, S. Carr, S. -W. Cheong

Abstract: We discovered "stripe" patterns of trimerization-ferroelectric domains in hexagonal REMnO3 (RE=Ho, ---, Lu) crystals (grown below ferroelectric transition temperatures (Tc), reaching up to 1435 oC), in contrast with the vortex patterns in YMnO3. These stripe patterns roughen with the appearance of numerous loop domains through thermal annealing just below Tc, but the stripe domain patterns turn to… ▽ More We discovered "stripe" patterns of trimerization-ferroelectric domains in hexagonal REMnO3 (RE=Ho, ---, Lu) crystals (grown below ferroelectric transition temperatures (Tc), reaching up to 1435 oC), in contrast with the vortex patterns in YMnO3. These stripe patterns roughen with the appearance of numerous loop domains through thermal annealing just below Tc, but the stripe domain patterns turn to vortex-antivortex domain patterns through a freezing process when crystals cross Tc even though the phase transition appears not to be Kosterlitz-Thouless-type. The experimental systematics are compared with the results of our six-state clock model simulation and also the Kibble-Zurek Mechanism for trapped topological defects. △ Less

Submitted 23 March, 2012; originally announced March 2012.

Large 1/f noise of unipolar resistance switching and its percolating nature

Authors: S. B. Lee, S. Park, J. S. Lee, S. C. Chae, S. H. Chang, M. H. Jung, Y. Jo, B. Kahng, B. S. Kang, M. -J. Lee, T. W. Noh

Abstract: We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral density of the voltage fluctuation was increased by approximately five orders of magnitude. At 100 K, the relative resistance fluctuation, SR/R2, in the low resistance state displayed a power law dependence on the resist… ▽ More We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral density of the voltage fluctuation was increased by approximately five orders of magnitude. At 100 K, the relative resistance fluctuation, SR/R2, in the low resistance state displayed a power law dependence on the resistance R with exponent w = 1.6. This behavior can be explained by percolation theory; however, at higher temperatures or near the switching voltage, SR/R2 becomes enhanced further. This large 1/f noise can be therefore an important problem in the development of resistance random access memory devices. △ Less

Submitted 11 August, 2009; originally announced August 2009.

Comments: 15 pages, 3 figures

Predictability of reset switching voltages in unipolar resistance switching

Authors: S. B. Lee, S. C. Chae, S. H. Chang, T. W. Noh

Abstract: In unipolar resistance switching of NiO capacitors, Joule heating in the conducting channels should cause a strong nonlinearity in the low resistance state current-voltage (I-V) curves. Due to the percolating nature of the conducting channels, the reset current IR, can be scaled to the nonlinear coefficient Bo of the I-V curves. This scaling relationship can be used to predict reset voltages, in… ▽ More In unipolar resistance switching of NiO capacitors, Joule heating in the conducting channels should cause a strong nonlinearity in the low resistance state current-voltage (I-V) curves. Due to the percolating nature of the conducting channels, the reset current IR, can be scaled to the nonlinear coefficient Bo of the I-V curves. This scaling relationship can be used to predict reset voltages, independent of NiO capacitor size; it can also be applied to TiO2 and FeOy capacitors. Using this relation, we developed an error correction scheme to provide a clear window for separating reset and set voltages in memory operations. △ Less

Submitted 9 March, 2009; originally announced March 2009.

Scaling behaviors of RESET voltages and currents in unipolar resistance switching

Authors: S. B. Lee, S. C. Chae, S. H. Chang, J. S. Lee, S. Seo, B. Kahng, T. W. Noh

Abstract: Unipolar switching phenomena have attracted a great deal of recent attention, but the wide distributions of switching voltages still pose major obstacles for scientific advancement and practical applications. Using NiO capacitors, we investigated the distributions of the RESET voltage and current. We found that they scaled with the resistance value Ro in the low resistance state, and that the sc… ▽ More Unipolar switching phenomena have attracted a great deal of recent attention, but the wide distributions of switching voltages still pose major obstacles for scientific advancement and practical applications. Using NiO capacitors, we investigated the distributions of the RESET voltage and current. We found that they scaled with the resistance value Ro in the low resistance state, and that the scaling exponents varied at Ro = 30 Ohm. We explain these intriguing scaling behaviors and their crossovers by analogy with percolation theory. We show that the connectivity of conducting filaments plays a crucial role in the RESET process. △ Less

Submitted 22 October, 2008; originally announced October 2008.

Comments: 17 pages, 4 figures

Strong resistance nonlinearity and third harmonic generation in the unipolar resistance switching of NiO thin films

Authors: S. B. Lee, S. C. Chae, S. H. Chang, J. S. Lee, S. Park, Y. Jo, S. Seo, B. Kahng, T. W. Noh

Abstract: We investigated third harmonic generation in NiO thin films, which exhibit unipolar resistance switching behavior. We found that the low resistance states of the films were strongly nonlinear, with variations in the resistance R as large as 60%. This strong nonlinear behavior was most likely caused by Joule heating of conducting filaments inside the films. By carefully controlling the applied dc… ▽ More We investigated third harmonic generation in NiO thin films, which exhibit unipolar resistance switching behavior. We found that the low resistance states of the films were strongly nonlinear, with variations in the resistance R as large as 60%. This strong nonlinear behavior was most likely caused by Joule heating of conducting filaments inside the films. By carefully controlling the applied dc bias, we obtained several low resistance states, whose values of the third harmonic coefficient B3f were proportional to R2+w (with w = 2.07). This suggested that the resistance changes of the NiO films were accompanied by connectivity changes of the conducting filaments, as observed in classical percolating systems. △ Less

Submitted 6 October, 2008; originally announced October 2008.

Comments: 17 pages, 3 figures

Percolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film

Authors: S. H. Chang, J. S. Lee, S. C. Chae, S. B. Lee, C. Liu, B. Kahng, D. -W. Kim, T. W. Noh

Abstract: We observed two types of unipolar resistance switching (RS) in NiO film: memory RS at low temperature and threshold RS at high temperature. We explain these phenomena using a bond percolation model that describes the forming and rupturing of conducting filaments. Assuming Joule heating and thermal dissipation processes in the bonds, we explain how both RS types could occur and be controlled by t… ▽ More We observed two types of unipolar resistance switching (RS) in NiO film: memory RS at low temperature and threshold RS at high temperature. We explain these phenomena using a bond percolation model that describes the forming and rupturing of conducting filaments. Assuming Joule heating and thermal dissipation processes in the bonds, we explain how both RS types could occur and be controlled by temperature. We show that these unipolar RS are closely related and can be explained by a simple unified percolation picture. △ Less

Submitted 30 March, 2008; originally announced March 2008.

Comments: 16 pages, 5 figures

Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors

Authors: S. H. Chang, S. C. Chae, S. B. Lee, C. Liu, T. W. Noh, J. S. Lee, B. Kahng, J. H. Jang, M. Y. Kim, D. -W. Kim, C. U. Jung

Abstract: We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode thicknesses, $t_{BE}$, and investigated their resistance switching behaviors. The capacitors with $t_{BE} \geq 50$ nm exhibited typical unipolar resistance memory switching, while those with $t_{BE} \leq 30$ nm showed threshold switching. This interesting phenomenon can be explained in terms of the temperature-dependent s… ▽ More We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode thicknesses, $t_{BE}$, and investigated their resistance switching behaviors. The capacitors with $t_{BE} \geq 50$ nm exhibited typical unipolar resistance memory switching, while those with $t_{BE} \leq 30$ nm showed threshold switching. This interesting phenomenon can be explained in terms of the temperature-dependent stability of conducting filaments. In particular, the thinner $t_{BE}$ makes dissipation of Joule heat less efficient, so the filaments will be at a higher temperature and become less stable. This study demonstrates the importance of heat dissipation in resistance random access memory. △ Less

Submitted 25 February, 2008; originally announced February 2008.

Comments: 14 pages, 3 figures

Abnormal Resistance Switching Behaviors of NiO Thin Films: Possible Occurrence of Simultaneous Formation and Rupture of Conducting Channels

Authors: Chunli Liu, S. C. Chae, S. H. Chang, S. B. Lee, T. W. Noh, J. S. Lee, B. Kahng, D. -W. Kim, C. U. Jung, S. Seo, Seung-Eon Ahn

Abstract: We report the detailed current-voltage (I-V) characteristics of resistance switching in NiO thin films. In unipolar resistance switching, it is commonly believed that conducting filaments will rupture when NiO changes from a low resistance to a high resistance state. However, we found that this resistance switching can sometimes show abnormal behavior during voltage- and current-driven I-V measu… ▽ More We report the detailed current-voltage (I-V) characteristics of resistance switching in NiO thin films. In unipolar resistance switching, it is commonly believed that conducting filaments will rupture when NiO changes from a low resistance to a high resistance state. However, we found that this resistance switching can sometimes show abnormal behavior during voltage- and current-driven I-V measurements. We used the random circuit breaker network model to explain how abnormal switching behaviors could occur. We found that this resistance change can occur via a series of avalanche processes, where conducting filaments could be formed as well as ruptured. △ Less

Submitted 22 January, 2008; originally announced January 2008.

Comments: 12 pages, 5 figures

Epitaxial growth and the magnetic properties of orthorhombic YTiO3 thin films

Authors: S. C. Chae, Y. J. Chang, S. S. A. Seo, T. W. Noh, D. -W. Kim, C. U. Jung

Abstract: High-quality YTiO3 thin films were grown on LaAlO3 (110) substrates at low oxygen pressures (<10-8 Torr) using pulsed laser deposition. The in-plane asymmetric atomic arrangements at the substrate surface allowed us to grow epitaxial YTiO3 thin films, which have an orthorhombic crystal structure with quite different a- and b-axes lattice constants. The YTiO3 film exhibited a clear ferromagnetic… ▽ More High-quality YTiO3 thin films were grown on LaAlO3 (110) substrates at low oxygen pressures (<10-8 Torr) using pulsed laser deposition. The in-plane asymmetric atomic arrangements at the substrate surface allowed us to grow epitaxial YTiO3 thin films, which have an orthorhombic crystal structure with quite different a- and b-axes lattice constants. The YTiO3 film exhibited a clear ferromagnetic transition at 30 K with a saturation magnetization of about 0.7 uB/Ti. The magnetic easy axis was found to be along the [1-10] direction of the substrate, which differs from the single crystal easy axis direction, i.e., [001]. △ Less

Submitted 23 September, 2006; originally announced September 2006.

Comments: 14 pages, 4 figures

Magnetoelectric effects of nanoparticulate Pb(Zr0.52Ti0.48)O3-NiFe2O4 composite films

Authors: Hyejin Ryu, P. Murugavel, J. H. Lee, S. C. Chae, T. W. Noh, Yoon Seok Oh, Hyung Jin Kim, Kee Hoon Kim, Jae Hyuck Jang, Miyoung Kim, C. Bae, J. -G. Park

Abstract: We fabricated Pb(Zr0.52Ti0.48)O3-NiFe2O4 composite films consisting of randomly dispersed NiFe2O4 nanoparticles in the Pb(Zr0.52Ti0.48)O3 matrix. The structural analysis revealed that the crystal axes of the NiFe2O4 nanoparticles are aligned with those of the ferroelectric matrix. The composite has good ferroelectric and magnetic properties. We measured the transverse and longitudinal components… ▽ More We fabricated Pb(Zr0.52Ti0.48)O3-NiFe2O4 composite films consisting of randomly dispersed NiFe2O4 nanoparticles in the Pb(Zr0.52Ti0.48)O3 matrix. The structural analysis revealed that the crystal axes of the NiFe2O4 nanoparticles are aligned with those of the ferroelectric matrix. The composite has good ferroelectric and magnetic properties. We measured the transverse and longitudinal components of the magnetoelectric voltage coefficient, which supports the postulate that the magnetoelectric effect comes from direct stress coupling between magnetostrictive NiFe2O4 and piezoelectric Pb(Zr0.52Ti0.48)O3 grains. △ Less

Submitted 28 June, 2006; originally announced June 2006.

Comments: 11 pages, 4 figures

Journal ref: Appl. Phys. Lett. 89, 102907 (2006)