Showing 1–3 of 3 results for author: Fiagbenu, M M A

Periodically Poled Aluminum Scandium Nitride Bulk Acoustic Wave Resonators and Filters for Communications in the 6G Era

Authors: Izhar, M. M. A. Fiagbenu, S. Yao, X. Du, P. Musavigharavi, Y. Deng, J. Leathersich, C. Moe, A. Kochhar, E. A. Stach, R. Vetury, R. H. Olsson III

Abstract: Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequency bands (>8 GHz) are expected to require resonators with high-quality factor (Q) and electromechanical coupling (k_t^2) to form filters with low insertion loss and high selectivity. However, both the Q and k_t^2 of re… ▽ More Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequency bands (>8 GHz) are expected to require resonators with high-quality factor (Q) and electromechanical coupling (k_t^2) to form filters with low insertion loss and high selectivity. However, both the Q and k_t^2 of resonator devices formed in traditional uniform polarization piezoelectric films of aluminum nitride (AlN) and aluminum scandium nitride (AlScN) decrease when scaled beyond 8 GHz. In this work, we utilized 4-layer AlScN periodically poled piezoelectric films (P3F) to construct high frequency (~17-18 GHz) resonators and filters. The resonator performance is studied over a range of device geometries, with the best resonator achieving a k_t^2 of 11.8% and a Q_p of 236.6 at the parallel resonance frequency (fp) of 17.9 GHz. These resulting figures of merit are ((FoM)_1=(k_t^2 Q)_p and (FoM_2=f_p(FoM)_1x10^-9) ) 27.9 and 500 respectively. These and the k_t^2 are significantly higher than previously reported An/AlScN-based resonators operating at similar frequencies. Fabricated 3-element and 6-element filters formed from these resonators demonstrated low insertion losses (IL) of 1.86 dB and 3.25 dB, and -3 dB bandwidths (BW) of 680 MHz (fractional BW of 3.9%) and 590 MHz (fractional BW of 3.3%) at ~17.4 GHz center frequency. The 3-element and 6-element filters achieved excellent linearity with in-band input third-order intercept point (IIP3) values of +36 dBm and +40 dBm, respectively, which are significantly higher than previously reported acoustic filters operating at similar frequencies. △ Less

Submitted 24 May, 2024; originally announced June 2024.

Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes

Authors: Xiwen Liu, John Ting, Yunfei He, Merrilyn Mercy Adzo Fiagbenu, Jeffrey Zheng, Dixiong Wang, Jonathan Frost, Pariasadat Musavigharavi, Giovanni Esteves, Kim Kisslinger, Surendra B. Anantharaman, Eric A. Stach, Roy H. Olsson III, Deep Jariwala

Abstract: The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data centric processing. At a hardware level, this presents an urgent need to integrate dense, high-performance and low-power memory units with Si logic-processor units. However, data-heavy problems such as search and pattern matching also require paradigm changing inn… ▽ More The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data centric processing. At a hardware level, this presents an urgent need to integrate dense, high-performance and low-power memory units with Si logic-processor units. However, data-heavy problems such as search and pattern matching also require paradigm changing innovations at the circuit and architecture level to enable compute in memory (CIM) operations. CIM architectures that combine data storage yet concurrently offer low-delay and small footprint are highly sought after but have not been realized. Here, we present Aluminum Scandium Nitride (AlScN) ferroelectric diode (FeD) memristor devices that allow for storage, search and neural network-based pattern recognition in a transistor-free architecture. Our devices can be directly integrated on top of Si processors in a scalable, back-end-of-line process. We leverage the field-programmability, non-volatility and non-linearity of FeDs to demonstrated circuit blocks that can support search operations in-situ memory with search delay times < 0.1 ns and a cell footprint < 0.12 um^2. In addition, we demonstrate matrix multiplication operations with 4-bit operation of the FeDs. Our results highlight FeDs as promising candidates for fast, efficient, and multifunctional CIM platforms. △ Less

Submitted 10 February, 2022; originally announced February 2022.

Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs

Authors: Kwan-Ho Kim, Seyong Oh, Merrilyn Mercy Adzo Fiagbenu, Jeffrey Zheng, Pariasadat Musavigharavi, Pawan Kumar, Nicholas Trainor, Areej Aljarb, Yi Wan, Hyong Min Kim, Keshava Katti, Zichen Tang, Vincent C. Tung, Joan Redwing, Eric A. Stach, Roy H. Olsson III, Deep Jariwala

Abstract: Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as artificial intelligence. Despite decades of efforts, reliable, compact, energy efficient and scalable memory devices are elusive. Ferroelectric Field… ▽ More Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as artificial intelligence. Despite decades of efforts, reliable, compact, energy efficient and scalable memory devices are elusive. Ferroelectric Field Effect Transistors (FE-FETs) are a promising candidate but their scalability and performance in a back-end-of-line (BEOL) process remain unattained. Here, we present scalable BEOL compatible FE-FETs using two-dimensional (2D) MoS2 channel and AlScN ferroelectric dielectric. We have fabricated a large array of FE-FETs with memory windows larger than 7.8 V, ON/OFF ratios of greater than 10^7, and ON current density greater than 250 uA/um, all at ~80 nm channel lengths. Our devices show stable retention up to 20000 secs and endurance up to 20000 cycles in addition to 4-bit pulse programmable memory features thereby opening a path towards scalable 3D hetero-integration of 2D semiconductor memory with Si CMOS logic. △ Less

Submitted 6 January, 2022; originally announced January 2022.