Showing 1–50 of 58 results for author: Hübner, R

Emergence of cellular nematic order is a conserved feature of gastrulation in animal embryos

Authors: Xin Li, Robert J. Huebner, Margot L. K. Williams, Jessica Sawyer, Mark Peifer, John B. Wallingford, D. Thirumalai

Abstract: Cells undergo dramatic changes in morphology during embryogenesis, yet how these changes affect the formation of ordered tissues remains elusive. Here we find that the emergence of a nematic liquid crystal phase occurs in cells during gastrulation in the development of embryos of fish, frogs, and fruit flies. Moreover, the spatial correlations in all three organisms are long-ranged and follow a si… ▽ More Cells undergo dramatic changes in morphology during embryogenesis, yet how these changes affect the formation of ordered tissues remains elusive. Here we find that the emergence of a nematic liquid crystal phase occurs in cells during gastrulation in the development of embryos of fish, frogs, and fruit flies. Moreover, the spatial correlations in all three organisms are long-ranged and follow a similar power-law decay (y~$x^{-α}$ ) with $α$ less than unity for the nematic order parameter, suggesting a common underlying physical mechanism unifies events in these distantly related species. All three species exhibit similar propagation of the nematic phase, reminiscent of nucleation and growth phenomena. Finally, we use a theoretical model along with disruptions of cell adhesion and cell specification to characterize the minimal features required for formation of the nematic phase. Our results provide a framework for understanding a potentially universal features of metazoan embryogenesis and shed light on the advent of ordered structures during animal development. △ Less

Submitted 16 July, 2024; originally announced July 2024.

Comments: Main text: 29 pages, 6 figures. SI: 9 figures and 1 table

Antiferromagnetic nanoscale bit arrays of magnetoelectric Cr$_2$O$_3$ thin films

Authors: Peter Rickhaus, Oleksandr V. Pylypovskyi, Gediminas Seniutinas, Vicent Borras, Paul Lehmann, Kai Wagner, Liza Žaper, Paulina J. Prusik, Pavlo Makushko, Igor Veremchuk, Tobias Kosub, René Hübner, Denis D. Sheka, Patrick Maletinsky, Denys Makarov

Abstract: Magnetism of oxide antiferromagnets (AFMs) has been studied in single crystals and extended thin films. The properties of AFM nanostructures still remain underexplored. Here, we report on the fabrication and magnetic imaging of granular 100-nm-thick magnetoelectric Cr$_2$O$_3$ films patterned in circular bits with diameters ranging from 500 down to 100 nm. With the change of the lateral size, the… ▽ More Magnetism of oxide antiferromagnets (AFMs) has been studied in single crystals and extended thin films. The properties of AFM nanostructures still remain underexplored. Here, we report on the fabrication and magnetic imaging of granular 100-nm-thick magnetoelectric Cr$_2$O$_3$ films patterned in circular bits with diameters ranging from 500 down to 100 nm. With the change of the lateral size, the domain structure evolves from a multidomain state for larger bits to a single domain state for the smallest bits. Based on spin-lattice simulations, we show that the physics of the domain pattern formation in granular AFM bits is primarily determined by the energy dissipation upon cooling, which results in motion and expelling of AFM domain walls of the bit. Our results provide a way towards the fabrication of single domain AFM-bit-patterned memory devices and the exploration of the interplay between AFM nanostructures and their geometric shape. △ Less

Submitted 27 June, 2024; originally announced June 2024.

Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing

Authors: Oliver Steuer, Daniel Schwarz, Michael Oehme, Florian Bärwolf, Yu Cheng, Fabian Ganss, René Hübner, René Heller, Shengqiang Zhou, Manfred Helm, Gianaurelio Cuniberti, Yordan M. Georgiev, Slawomir Prucnal

Abstract: Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier mobility than pure Si, and are compatible with the CMOS technology. Unfortunately, the equilibrium solid solubility of Sn in Si1-xGex is less than 1% and the pseud… ▽ More Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier mobility than pure Si, and are compatible with the CMOS technology. Unfortunately, the equilibrium solid solubility of Sn in Si1-xGex is less than 1% and the pseudomorphic growth of Si1-x-yGeySnx on Ge or Si can cause in-plane compressive strain in the grown layer, degrading the superior properties of these alloys. Therefore, post-growth strain engineering by ultrafast non-equilibrium thermal treatments like pulse laser annealing (PLA) is needed to improve the layer quality. In this article, Ge0.94Sn0.06 and Si0.14Ge0.8Sn0.06 thin films grown on silicon-on-insulator substrates by molecular beam epitaxy were post growth thermally treated by PLA. The material is analyzed before and after the thermal treatments by transmission electron microscopy, X-ray diffraction (XRD), Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Hall effect measurements. It is shown that after annealing, the material is single-crystalline with improved crystallinity than the as-grown layer. This is reflected in a significantly increased XRD reflection intensity, well-ordered atomic pillars, and increased active carrier concentrations up to 4x1019 cm-3. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing

Authors: Oliver Steuer, Michail Michailow, René Hübner, Krzysztof Pyszniak, Marcin Turek, Ulrich Kentsch, Fabian Ganss, Muhammad Moazzam Khan, Lars Rebohle, Shengqiang Zhou, Joachim Knoch, Manfred Helm, Gianaurelio Cuniberti, Yordan M. Georgiev, Slawomir Prucnal

Abstract: For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this alloying approach of group-IV semiconductors, adding tin (Sn) into the alloy appears as the obvious next step, which leads to additional possibilities for tailoring the material properties. Adding Sn enables effective band g… ▽ More For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this alloying approach of group-IV semiconductors, adding tin (Sn) into the alloy appears as the obvious next step, which leads to additional possibilities for tailoring the material properties. Adding Sn enables effective band gap and strain engineering and can improve the carrier mobilities, which makes Si1-x-yGeySnx alloys promising candidates for future opto- and nanoelectronics applications. The bottom-up approach for epitaxial growth of Si1-x-yGeySnx, e.g., by chemical vapor deposition and molecular beam epitaxy, allows tuning the material properties in the growth direction only; the realization of local material modifications to generate lateral heterostructures with such a bottom-up approach is extremely elaborate, since it would require the use of lithography, etching, and either selective epitaxy or epitaxy and chemical-mechanical polishing giving rise to interface issues, non-planar substrates, etc. This article shows the possibility of fabricating Si1-x-yGeySnx alloys by Sn ion beam implantation into Si1-yGey layers followed by millisecond-range flash lamp annealing (FLA). The materials are investigated by Rutherford backscattering spectrometry, micro Raman spectroscopy, X-ray diffraction, and transmission electron microscopy. The fabrication approach was adapted to ultra-thin Si1-yGey layers on silicon-on-insulator substrates. The results show the fabrication of single-crystalline Si1-x-yGeySnx with up to 2.3 at.% incorporated Sn without any indication of Sn segregation after recrystallization via FLA. Finally, we exhibit the possibility of implanting Sn locally in ultra-thin Si1-yGey films by masking unstructured regions on the chip. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Cobalt-based Co$_3$Mo3N/Co$_4$N/Co Metallic Heterostructure as a Highly Active Electrocatalyst for Alkaline Overall Water Splitting

Authors: Yuanwu Liu, Lirong Wang, René Hübner, Johannes Kresse, Xiaoming Zhang, Marielle Deconinick, Yana Vaynzof, Inez M. Weidinger, Alexander Eychmüller

Abstract: Alkaline water electrolysis is considered a commercially viable option for large-scale hydrogen production. However, this process still faces challenges due to the high voltage (>1.65 V at 10 mA cm$^{-2}$) and its limited stability at higher current densities due to the inefficient electron transport kinetics. Herein, a novel cobalt based metallic heterostructure (Co$_3$Mo3N/Co$_4$N/Co/Co) is desi… ▽ More Alkaline water electrolysis is considered a commercially viable option for large-scale hydrogen production. However, this process still faces challenges due to the high voltage (>1.65 V at 10 mA cm$^{-2}$) and its limited stability at higher current densities due to the inefficient electron transport kinetics. Herein, a novel cobalt based metallic heterostructure (Co$_3$Mo3N/Co$_4$N/Co/Co) is designed for application for water electrolysis. Operando Raman experiments reveal that the formation of Co$_3$Mo3N/Co$_4$N/Co heterointerface boosts the free water adsorption and dissociation, resulting in a surplus of protons available for subsequent hydrogen production. Furthermore, the altered electronic structure of Co$_3$Mo3N/Co$_4$N/Co heterointerface optimizes the ΔGH of nitrogen atoms at the interface. This synergistic effect between interfacial nitrogen atoms and metal phase cobalt creates highly efficient hydrogen evolution reaction (HER) active sites, thereby enhancing the overall performance. Additionally, the heterostructure exhibits a rapid OH- adsorption rate, coupled with a strong adsorption strength, leading to improved oxygen evolution reaction (OER) performance. Crucially, the metallic heterojunction facilitates fast electron transport, expediting the aforementioned reaction steps and ultimately improving the overall efficiency of water splitting. The water electrolyzer with Co$_3$Mo3N/Co$_4$N/Co/Co as a catalyst exhibits outstanding performance, requiring an impressively low cell voltage of 1.58 V at 10 mA cm$^{-2}$ and maintaining approximately 100% retention over a remarkable 100 h duration at 200 mA cm$^{-2}$. This performance significantly exceeds that of the commercial Pt/C || RuO2 electrolyzer. △ Less

Submitted 17 April, 2024; originally announced April 2024.

Alloyed Re$_x$Mo$_{1-x}$S$_2$ Nanoflakes with Enlarged Interlayer Distances for Hydrogen Evolution

Authors: Jing Li, René Hübner, Marielle Deconinck, Ankita Bora, Markus Göbel, Dana Schwarz, Guangbo Chen, Guangzhao Wang, Shengyuan A. Yang, Yana Vaynzof, Vladimir Lesnyak

Abstract: Molybdenum sulfide (MoS$_2$) has attracted significant attention due to its great potential as a low-cost and efficient catalyst for the hydrogen evolution reaction. Developing a facile, easily upscalable, and inexpensive approach to produce catalytically active nanostructured MoS$_2$ with a high yield would significantly advance its practical application. Colloidal synthesis offers several advant… ▽ More Molybdenum sulfide (MoS$_2$) has attracted significant attention due to its great potential as a low-cost and efficient catalyst for the hydrogen evolution reaction. Developing a facile, easily upscalable, and inexpensive approach to produce catalytically active nanostructured MoS$_2$ with a high yield would significantly advance its practical application. Colloidal synthesis offers several advantages over other preparation techniques to overcome the low reaction yield of exfoliation and drawbacks of expensive equipment and processes used in chemical vapor deposition. In this work, we report an efficient synthesis of alloyed Re$_x$Mo$_{1-x}$S$_2$ nanoflakes with an enlarged interlayer distance, among which the composition Re$_{0.55}$Mo$_{0.45}$S$_2$ exhibits excellent catalytic performance with overpotentials as low as 79 mV at 10 mA/cm2 and a small Tafel slope of 42 mV/dec. Density functional theory calculations prove that enlarging the distance between layers in the Re$_x$Mo$_{1-x}$S$_2$alloy can greatly improve its catalytic performance due to a significantly reduced free energy of hydrogen adsorption. The developed approach paves the way to design advanced transition metal dichalcogenide-based catalysts for hydrogen evolution and to promote their large-scale practical application. △ Less

Submitted 17 April, 2024; originally announced April 2024.

Intrinsic magnetic properties of the layered antiferromagnet CrSBr

Authors: Fangchao Long, Kseniia Mosina, René Hübner, Zdenek Sofer, Julian Klein, Slawomir Prucnal, Manfred Helm, Florian Dirnberger, Shengqiang Zhou

Abstract: Van der Waals magnetic materials are an ideal platform to study low-dimensional magnetism. Opposed to other members of this family, the magnetic semiconductor CrSBr is highly resistant to degradation in air, which, besides its exceptional optical, electronic, and magnetic properties, is the reason the compound is receiving considerable attention at the moment. For many years, its magnetic phase di… ▽ More Van der Waals magnetic materials are an ideal platform to study low-dimensional magnetism. Opposed to other members of this family, the magnetic semiconductor CrSBr is highly resistant to degradation in air, which, besides its exceptional optical, electronic, and magnetic properties, is the reason the compound is receiving considerable attention at the moment. For many years, its magnetic phase diagram seemed to be well-understood. Recently, however, several groups observed a magnetic transition in magnetometry measurements at temperatures of around 40 K that is not expected from theoretical considerations, causing a debate about the intrinsic magnetic properties of the material. In this letter, we report the absence of this particular transition in magnetization measurements conducted on high-quality CrSBr crystals, attesting to the extrinsic nature of the low-temperature magnetic phase observed in other works. Our magnetometry results obtained from large bulk crystals are in very good agreement with the magnetic phase diagram of CrSBr previously predicted by the mean-field theory; A-type antiferromagnetic order is the only phase observed below the Néel temperature at TN = 131 K. Moreover, numerical fits based on the Curie-Weiss law confirm that strong ferromagnetic correlations are present within individual layers even at temperatures much larger than TN. △ Less

Submitted 9 September, 2023; originally announced September 2023.

Comments: 13 pages, submitted to Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 123, 222401 (2023)

Ferromagnetic interlayer coupling in CrSBr crystals irradiated by ions

Authors: Fangchao Long, Mahdi Ghorbani-Asl, Kseniia Mosina, Yi Li, Kaiman Lin, Fabian Ganss, René Hübner, Zdenek Sofer, Florian Dirnberger, Akashdeep Kamra, Arkady V. Krasheninnikov, Slawomir Prucnal, Manfred Helm, Shengqiang Zhou

Abstract: Layered magnetic materials are becoming a major platform for future spin-based applications. Particularly the air-stable van der Waals compound CrSBr is attracting considerable interest due to its prominent magneto-transport and magneto-optical properties. In this work, we observe a transition from antiferromagnetic to ferromagnetic behavior in CrSBr crystals exposed to high-energy, non-magnetic i… ▽ More Layered magnetic materials are becoming a major platform for future spin-based applications. Particularly the air-stable van der Waals compound CrSBr is attracting considerable interest due to its prominent magneto-transport and magneto-optical properties. In this work, we observe a transition from antiferromagnetic to ferromagnetic behavior in CrSBr crystals exposed to high-energy, non-magnetic ions. Already at moderate fluences, ion irradiation induces a remanent magnetization with hysteresis adapting to the easy-axis anisotropy of the pristine magnetic order up to a critical temperature of 110 K. Structure analysis of the irradiated crystals in conjunction with density functional theory calculations suggest that the displacement of constituent atoms due to collisions with ions and the formation of interstitials favors ferromagnetic order between the layers. △ Less

Submitted 27 September, 2023; v1 submitted 30 May, 2023; originally announced May 2023.

Comments: 25 pages including the supporting information, published as Nano Lett. 23, 8468-8473 (2023)

Journal ref: Nano Lett. 23, 8468-8473 (2023)

Twist-dependent intra- and interlayer excitons in moire MoSe2 homobilayers

Authors: Viviana Villafañe, Malte Kremser, Ruven Hübner, Marko M. Petrić, Nathan P. Wilson, Andreas V. Stier, Kai Müller, Matthias Florian, Alexander Steinhoff, Jonathan J. Finley

Abstract: Optoelectronic properties of van der Waals homostructures can be selectively engineered by the relative twist angle between layers. Here, we study the twist-dependent moire coupling in MoSe2 homobilayers. For small angles, we find a pronounced redshift of the K-K and Γ-K excitons accompanied by a transition from K-K to Γ-K emission. Both effects can be traced back to the underlying moire pattern i… ▽ More Optoelectronic properties of van der Waals homostructures can be selectively engineered by the relative twist angle between layers. Here, we study the twist-dependent moire coupling in MoSe2 homobilayers. For small angles, we find a pronounced redshift of the K-K and Γ-K excitons accompanied by a transition from K-K to Γ-K emission. Both effects can be traced back to the underlying moire pattern in the MoSe2 homobilayers, as confirmed by our low-energy continuum model for different moire excitons. We identify two distinct intralayer moire excitons for R-stacking, while H-stacking yields two degenerate intralayer excitons due to inversion symmetry. In both cases, bright interlayer excitons are found at higher energies. The performed calculations are in excellent agreement with experiment and allow us to characterize the observed exciton resonances, providing insight about the layer composition and relevant stacking configuration of different moire exciton species. △ Less

Submitted 21 October, 2022; originally announced October 2022.

Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon

Authors: Mao Wang, Ye Yu, Slawomir Prucnal, Yonder Berencén, Mohd Saif Shaikh, Lars Rebohle, Muhammad Bilal Khan, Vitaly Zviagin, René Hübner, Alexej Pashkin, Artur Erbe, Yordan M. Georgiev, Marius Grundmann, Manfred Helm, Robert Kirchner, Shengqiang Zhou

Abstract: Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior than the traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the sp… ▽ More Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior than the traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the spectral resonance positions into mid- to far-infrared regions, and the compatibility issue with the existing complementary metal-oxide-semiconductor (CMOS) manufacturing platform. Here, we demonstrate the occurrence of mid-infrared localized surface plasmon resonances (LSPR) in thin Si films hyperdoped with the known deep-level impurity tellurium. We show that the mid-infrared LSPR can be further enhanced and spectrally extended to the far-infrared range by fabricating two-dimensional arrays of micrometer-sized antennas in a Te-hyperdoped Si chip. Since Te-hyperdoped Si can also work as an infrared photodetector, we believe that our results will unlock the route toward the direct integration of plasmonic sensors with the one-chip CMOS platform, greatly advancing the possibility of mass manufacturing of high-performance plasmonic sensing systems. △ Less

Submitted 7 October, 2022; originally announced October 2022.

Comments: 20 pages, 5 figures

Journal ref: Nanoscale 14, 2826-2836 (2022)

Chlorine doping of MoSe2 flakes by ion implantation

Authors: Slawomir Prucnal, Arsalan Hashemi, Mahdi Ghorbani-Asl, René Hübner, Juanmei Duan, Yidan Wei, Divanshu Sharma, Dietrich R. T. Zahn, René Ziegenrücker, Ulrich Kentsch, Arkady V. Krasheninnikov, Manfred Helm, Shengqiang Zhou

Abstract: The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their optoelectronic properties. Specifically, controllable doping is essential. For conventional bulk semiconductors, ion implantation is the most developed method offering stable and tunable doping. In this work, we demonstrat… ▽ More The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their optoelectronic properties. Specifically, controllable doping is essential. For conventional bulk semiconductors, ion implantation is the most developed method offering stable and tunable doping. In this work, we demonstrate n-type doping in MoSe2 flakes realized by low-energy ion implantation of Cl+ ions followed by millisecond-range flash lamp annealing (FLA). We further show that FLA for 3 ms with a peak temperature of about 1000 °C is enough to recrystallize implanted MoSe2. The Cl distribution in few-layer-thick MoSe2 is measured by secondary ion mass spectrometry. An increase in the electron concentration with increasing Cl fluence is determined from the softening and red shift of the Raman-active A_1g phonon mode due to the Fano effect. The electrical measurements confirm the n-type doping of Cl-implanted MoSe2. A comparison of the results of our density functional theory calculations and experimental temperature-dependent micro-Raman spectroscopy data indicates that Cl atoms are incorporated into the atomic network of MoSe2 as substitutional donor impurities. △ Less

Submitted 24 September, 2021; originally announced September 2021.

Comments: 32 pages, 10 figures

Journal ref: Nanoscale 13, 5834 (2021)

B20-MnSi films grown on Si(100) substrates with magnetic skyrmion signature

Authors: Zichao Li, Ye Yuan, René Hübner, Viktor Begeza, Thomas Naumann, Lars Rebohle, Olav Hellwig, Manfred Helm, Kornelius Nielsch, Slawomir Prucnal, Shengqiang Zhou

Abstract: Magnetic skyrmions have been suggested as information carriers for future spintronic devices. As the first material with experimentally confirmed skyrmions, B20-type MnSi was the research focus for decades. Although B20-MnSi films have been successfully grown on Si(111) substrates, there is no report about B20-MnSi films on Si(100) substrates, which would be more preferred for practical applicatio… ▽ More Magnetic skyrmions have been suggested as information carriers for future spintronic devices. As the first material with experimentally confirmed skyrmions, B20-type MnSi was the research focus for decades. Although B20-MnSi films have been successfully grown on Si(111) substrates, there is no report about B20-MnSi films on Si(100) substrates, which would be more preferred for practical applications. In this letter, we present the first preparation of B20-MnSi on Si(100) substrates. It is realized by sub-second solid-state reaction between Mn and Si via flash-lamp annealing at ambient pressure. The regrown layer shows an enhanced Curie temperature of 43 K compared with bulk B20-MnSi. The magnetic skyrmion signature is proved in our films by magnetic and transport measurements. The millisecond-range flash annealing provides a promising avenue for the fabrication of Si-based skyrmionic devices. △ Less

Submitted 24 September, 2021; originally announced September 2021.

Comments: 17 pages, accepted at Materials Today Physics

Insight into the structure-property relation of UO2 nanoparticles

Authors: Evgeny Gerber, Anna Yu. Romanchuk, Stephan Weiss, Stephen Bauters, Bianca Schacherl, Tonya Vitova, René Hübner, Salim Shams Aldin Azzam, Dirk Detollenaere, Dipanjan Banerjee, Sergei M. Butorin, Stepan N. Kalmykov, Kristina O. Kvashnina

Abstract: Highly crystalline UO2 nanoparticles (NPs) with sizes of 2-3 nm were produced by fast chemical deposition of uranium(IV) under reducing conditions at pH 8-11. The particles were then characterized by microscopic and spectroscopic techniques including high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), high-energy resolution fluorescence detection (HERFD) X-ray absorp… ▽ More Highly crystalline UO2 nanoparticles (NPs) with sizes of 2-3 nm were produced by fast chemical deposition of uranium(IV) under reducing conditions at pH 8-11. The particles were then characterized by microscopic and spectroscopic techniques including high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), high-energy resolution fluorescence detection (HERFD) X-ray absorption spectroscopy at the U M4 edge and extended X-ray absorption fine structure (EXAFS) spectroscopy at the U L3 edge. The results of this investigation show that despite U(IV) being the dominant oxidation state of the freshly prepared UO2 NPs, they oxidize to U4O9 with time and under the X-ray beam, indicating the high reactivity of U(IV) under these conditions. Moreover, it was found that the oxidation process of NPs is accompanied by their growth in size to 6 nm. We highlight here the major differences and similarities of the UO2 NPs properties with PuO2, ThO2 and CeO2 NPs. △ Less

Submitted 23 February, 2021; originally announced February 2021.

Journal ref: Inorganic Chemistry Frontiers, 2021

Giant anisotropic magnetoresistance with dual-four-fold symmetry in CaMnO3/CaIrO3 heterostructures

Authors: Suman Sardar, Megha Vagadia, Tejas Tank Sarmistha Das, Brandon Gunn, Parul Pandey, R. Hübner, Fanny Rodolakis, Gilberto Fabbris, Yongseong Choi, Daniel Haskel, Alex Frano, D. S. Rana

Abstract: The realization of four-fold anisotropic magnetoresistance (AMR) in novel 3d-5d heterostructures has boosted major efforts in antiferromagnetic spintronics. However, despite the potential of incorporating strong spin-orbit coupling, only small AMR signals have been detected thus far, prompting a search for new mechanisms to enhance the signal. In this study on CaMnO3/CaIrO3 heterostructures, we re… ▽ More The realization of four-fold anisotropic magnetoresistance (AMR) in novel 3d-5d heterostructures has boosted major efforts in antiferromagnetic spintronics. However, despite the potential of incorporating strong spin-orbit coupling, only small AMR signals have been detected thus far, prompting a search for new mechanisms to enhance the signal. In this study on CaMnO3/CaIrO3 heterostructures, we report a unique dual-four-fold symmetric 70% AMR; a signal two orders of magnitude larger than previously observed in similar systems. We find that one order is enhanced by tuning a large biaxial anisotropy through octahedral tilts of similar sense in the constituent layers, while the second order is triggered by a spin-flop transition in a nearly Mott-type phase. Dynamics between these two phenomena as evidenced by the step-like AMR and a superimposed biaxial-anisotropy-induced AMR capture a subtle interplay of pseudospin coupling with the lattice and external magnetic field. Our study shows that a combination of charge-transfer, interlayer coupling, and a spin-flop transition can yield a giant AMR relevant for sensing and antiferromagnetic memory applications. △ Less

Submitted 29 December, 2020; originally announced December 2020.

Stress-controlled zero-field spin splitting in silicon carbide

Authors: I. D. Breev, A. V. Poshakinskiy, V. V. Yakovleva, S. S. Nagalyuk, E. N. Mokhov, R. Hübner, G. V. Astakhov, P. G. Baranov, A. N. Anisimov

Abstract: We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially-resolved confocal Raman spectroscopy. The zero-field splitting of the V1/V3 and V2 cent… ▽ More We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially-resolved confocal Raman spectroscopy. The zero-field splitting of the V1/V3 and V2 centers in 6H-SiC, measured by optically-detected magnetic resonance, reveal significant changes at the heterointerface compared to the bulk value. This approach allows unambiguous determination of the spin-deformation interaction constant, which turns out to be $0.75 \, \mathrm{GHz}$ for the V1/V3 centers and $0.5 \, \mathrm{GHz}$ for the V2 centers. Provided piezoelectricity of AlN, our results offer a strategy to realize the on-demand fine tuning of spin transition energies in SiC by deformation. △ Less

Submitted 8 December, 2020; originally announced December 2020.

Comments: 13 pages, 3 figures

Journal ref: Appl. Phys. Lett. 118, 084003 (2021)

Silicon-based Intermediate-band Infrared Photodetector realized by Te Hyperdoping

Authors: Mao Wang, Eric García-Hemme, Yonder Berencén, René Hübner, Yufang Xie, Lars Rebohle, Chi Xu, Harald Schneider, Manfred Helm, Shengqiang Zhou

Abstract: Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compatible photonic systems. However, extending their room-temperature photoresponse into the mid-wavelength infrared (MWIR) regime remains challenging due to the intrinsic bandgap of Si. Here, we report on a comprehensive stu… ▽ More Si-based photodetectors satisfy the criteria of low-cost and environmental-friendly, and can enable the development of on-chip complementary metal-oxide-semiconductor (CMOS)-compatible photonic systems. However, extending their room-temperature photoresponse into the mid-wavelength infrared (MWIR) regime remains challenging due to the intrinsic bandgap of Si. Here, we report on a comprehensive study of a room-temperature MWIR photodetector based on Si hyperdoped with Te. The demonstrated MWIR p-n photodiode exhibits a spectral photoresponse up to 5 μm and a slightly lower detector performance than the commercial devices in the wavelength range of 1.0-1.9 μm. We also investigate the correlation between the background noise and the sensitivity of the Te-hyperdoped Si photodiode, where the maximum room-temperature specific detectivity is found to be 3.2 x 10^12 cmHz^{1/2}W^{-1} and 9.2 x 10^8 cmHz^{1/2}W^{-1} at 1 μm and 1.55 μm, respectively. This work contributes to pave the way towards establishing a Si-based broadband infrared photonic system operating at room temperature. △ Less

Submitted 30 November, 2020; originally announced November 2020.

Comments: 24 pages, 5 figures, to be published at Adv. Opt. Mater

Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy

Authors: I. D. Breev, K. V. Likhachev, V. V. Yakovleva, R. Hübner, G. V. Astakhov, P. G. Baranov, E. N. Mokhov, A. N. Anisimov

Abstract: We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spatial stress and strain distribution in these heterostructures using confocal Raman spectroscopy. We measure the spectral shifts of various vibrational Raman modes across the heterointerface and along the entire depth of t… ▽ More We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spatial stress and strain distribution in these heterostructures using confocal Raman spectroscopy. We measure the spectral shifts of various vibrational Raman modes across the heterointerface and along the entire depth of the 4H- and 6H-SiC layers. Using the earlier experimental prediction for the phonon-deformation potential constants, we determine the stress tensor components in SiC as a function of the distance from the AlN/SiC heterointerface. In spite that the lattice parameter of SiC is smaller than that of AlN, the SiC layers are compressively strained at the heterointerface. This counterintuitive behavior is explained by different coefficients of thermal expansion of SiC and AlN when the heterostructures are cooled from growth to room temperature. The compressive stress values are maximum at the heterointerface, approaching one GPa, and relaxes to the equilibrium value on the scale of several tens of microns from the heterointerface. △ Less

Submitted 27 November, 2020; originally announced November 2020.

Comments: 19 pages, 6 figures, 3 table

Journal ref: Journal of Applied Physics 129, 055304 (2021)

Local and nonlocal spin Seebeck effect in lateral Pt-$\mathrm{Cr_2O_3}$-Pt devices at low temperatures

Authors: Prasanta Muduli, Richard Schlitz, Tobias Kosub, René Hübner, Artur Erbe, Denys Makarov, Sebastian T. B. Goennenwein

Abstract: We have studied thermally driven magnon spin transport (spin Seebeck effect, SSE) in heterostructures of antiferromagnetic $α$-$\mathrm{Cr_2O_3}$ and Pt at low temperatures. Monitoring the amplitude of the local and nonlocal SSE signals as a function of temperature, we found that both decrease with increasing temperature and disappear above 100 K and 20 K, respectively. Additionally, both SSE sign… ▽ More We have studied thermally driven magnon spin transport (spin Seebeck effect, SSE) in heterostructures of antiferromagnetic $α$-$\mathrm{Cr_2O_3}$ and Pt at low temperatures. Monitoring the amplitude of the local and nonlocal SSE signals as a function of temperature, we found that both decrease with increasing temperature and disappear above 100 K and 20 K, respectively. Additionally, both SSE signals show a tendency to saturate at low temperatures. The nonlocal SSE signal decays exponentially for intermediate injector-detector separation, consistent with magnon spin current transport in the relaxation regime. We estimate the magnon relaxation length of our $α$-$\mathrm{Cr_2O_3}$ films to be around 500 nm at 3 K. This short magnon relaxation length along with the strong temperature dependence of the SSE signal indicates that temperature-dependent inelastic magnon scattering processes play an important role in the intermediate range magnon transport. Our observation is relevant to low-dissipation antiferromagnetic magnon memory and logic devices involving thermal magnon generation and transport. △ Less

Submitted 11 February, 2021; v1 submitted 17 November, 2020; originally announced November 2020.

Comments: Accepted in APL Materials, For Supplementary Material see published version

Gapped magnetic ground state in quantum-spin-liquid candidate $κ$-(BEDT-TTF)$_2$-Cu$_2$(CN)$_3$

Authors: Björn Miksch, Andrej Pustogow, Mojtaba Javaheri Rahim, Andrey A. Bardin, Kazushi Kanoda, John A. Schlueter, Ralph Hübner, Marc Scheffler, Martin Dressel

Abstract: Geometrical frustration, quantum entanglement and disorder may prevent long-range order of localized spins with strong exchange interactions, resulting in a novel state of matter. $κ$-(BEDT-TTF)$_2$-Cu$_2$(CN)$_3$ is considered the best approximation of this elusive quantum-spin-liquid state, but its ground-state properties remain puzzling. Here we present a multi-frequency electron-spin resonance… ▽ More Geometrical frustration, quantum entanglement and disorder may prevent long-range order of localized spins with strong exchange interactions, resulting in a novel state of matter. $κ$-(BEDT-TTF)$_2$-Cu$_2$(CN)$_3$ is considered the best approximation of this elusive quantum-spin-liquid state, but its ground-state properties remain puzzling. Here we present a multi-frequency electron-spin resonance study down to millikelvin temperatures, revealing a rapid drop of the spin susceptibility at $T^*=6\,\mathrm{K}$. This opening of a spin gap, accompanied by structural modifications, suggests the enigmatic `$6\,\mathrm{K}$-anomaly' as the transition to a valence-bond-solid ground state. We identify an impurity contribution that becomes dominant when the intrinsic spins form singlets. Only probing the electrons directly manifests the pivotal role of defects for the low-energy properties of quantum-spin systems without magnetic order. △ Less

Submitted 30 October, 2020; originally announced October 2020.

Comments: 34 pages, 17 figures

Journal ref: Science, Vol. 372, Issue 6539, pp. 276-279 (2021)

Dissolution of donor-vacancy clusters in heavily doped n-type germanium

Authors: Slawomir Prucnal, Maciej O. Liedke, Xiaoshuang Wang, Maik Butterling, Matthias Posselt, Joachim Knoch, Horst Windgassen, Eric Hirschmann, Yonder Berencén, Lars Rebohle, Mao Wang, Enrico Napoltani, Jacopo Frigerio, Andrea Ballabio, Giovani Isella, René Hübner, Andreas Wagner, Hartmut Bracht, Manfred Helm, Shengqiang Zhou

Abstract: The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concen… ▽ More The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concentration by more than three-fold together with a suppression of phosphorus diffusion. Electrochemical capacitance-voltage measurements in conjunction with secondary ion mass spectrometry, positron annihilation lifetime spectroscopy and theoretical calculations enabled us to address and understand a fundamental problem that has hindered so far the full integration of Ge with complementary-metal-oxide-semiconductor technology. △ Less

Submitted 28 October, 2020; originally announced October 2020.

Comments: 19 pages, 5 figures, to be published at New J. Phys

Phase coexistence at the first-order Mott-transition revealed by pressure-dependent dielectric spectroscopy of $κ$-(BEDT-TTF)$_2$Cu$_2$(CN)$_3$

Authors: R. Rösslhuber, A. Pustogow, E. Uykur, A. Böhme, A. Löhle, R. Hübner, J. Schlueter, Y. Tan, V. Dobrosavljević, M. Dressel

Abstract: The dimer Mott insulator $κ$-(BEDT-TTF)$_2$Cu$_2$(CN)$_3$ can be tuned into a metallic and superconducting state upon applying pressure of 1.5 kbar and more. We have performed dielectric spectroscopy measurements (7 kHz to 5 MHz) on $κ$-(BEDT-TTF)$_2$Cu$_2$(CN)$_3$ single crystals as a function of temperature (down to $T=8$ K) and pressure (up to $p=4$ kbar). At ambient conditions, a relaxor-like… ▽ More The dimer Mott insulator $κ$-(BEDT-TTF)$_2$Cu$_2$(CN)$_3$ can be tuned into a metallic and superconducting state upon applying pressure of 1.5 kbar and more. We have performed dielectric spectroscopy measurements (7 kHz to 5 MHz) on $κ$-(BEDT-TTF)$_2$Cu$_2$(CN)$_3$ single crystals as a function of temperature (down to $T=8$ K) and pressure (up to $p=4$ kbar). At ambient conditions, a relaxor-like dielectric behavior develops below 50 K that shifts toward lower temperatures as the crystal is pressurized. Interestingly, a second peak emerges in $\varepsilon_{1}(T)$ around $T=15$ K, which becomes strongly enhanced with pressure and is attributed to a small volume fraction of metallic puddles in the insulating host phase. When approaching the phase boundary, this peak diverges rapidly reaching $\varepsilon_{1} \approx 10^{5}$. Our dynamical mean-field theory calculations substantiate that the dielectric catastrophe at the Mott transition is not caused by closing the energy gap, but due to the spatial coexistence of correlated metallic and insulating regions. We discuss the percolative nature of the first-order Mott insulator-to-metal transition in all details. △ Less

Submitted 10 March, 2021; v1 submitted 27 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. B 103, 125111 (2021)

Low damping and microstructural perfection of sub-40nm-thin yttrium iron garnet films grown by liquid phase epitaxy

Authors: Carsten Dubs, Oleksii Surzhenko, Ronny Thomas, Julia Osten, Tobias Schneider, Kilian Lenz, Jörg Grenzer, René Hübner, Elke Wendler

Abstract: The field of magnon spintronics is experiencing an increasing interest in the development of solutions for spin-wave-based data transport and processing technologies that are complementary or alternative to modern CMOS architectures. Nanometer-thin yttrium iron garnet (YIG) films have been the gold standard for insulator-based spintronics to date, but a potential process technology that can delive… ▽ More The field of magnon spintronics is experiencing an increasing interest in the development of solutions for spin-wave-based data transport and processing technologies that are complementary or alternative to modern CMOS architectures. Nanometer-thin yttrium iron garnet (YIG) films have been the gold standard for insulator-based spintronics to date, but a potential process technology that can deliver perfect, homogeneous large-diameter films is still lacking. We report that liquid phase epitaxy (LPE) enables the deposition of nanometer-thin YIG films with low ferromagnetic resonance losses and consistently high magnetic quality down to a thickness of 20 nm. The obtained epitaxial films are characterized by an ideal stoichiometry and perfect film lattices, which show neither significant compositional strain nor geometric mosaicity, but sharp interfaces. Their magneto-static and dynamic behavior is similar to that of single crystalline bulk YIG. We found, that the Gilbert damping coefficient alpha is independent of the film thickness and close to 1 x 10-4, and that together with an inhomogeneous peak-to-peak linewidth broadening of delta H0|| = 0.4 G, these values are among the lowest ever reported for YIG films with a thickness smaller than 40 nm. These results suggest, that nanometer-thin LPE films can be used to fabricate nano- and micro-scaled circuits with the required quality for magnonic devices. The LPE technique is easily scalable to YIG sample diameters of several inches. △ Less

Submitted 21 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. Materials 4, 024416 (2020)

Silver particles with rhombicuboctahedral shape and effectively isotropic interactions with light

Authors: Anja Maria Steiner, Martin Mayer, Daniel Schletz, Daniel Wolf, Petr Formanek, René Hübner, Martin Dulle, Stephan Förster, Tobias A. F. König, Andreas Fery

Abstract: Truly spherical silver nanoparticles are of great importance for fundamental studies including plasmonic applications, but the direct synthesis in aqueous media is not feasible. Using the commonly employed copper-based etching processes, isotropicplasmonic response can be achieved by etching well-defined silver nanocubes. Whilst spherical like shape is typically prevailing in such processes, we es… ▽ More Truly spherical silver nanoparticles are of great importance for fundamental studies including plasmonic applications, but the direct synthesis in aqueous media is not feasible. Using the commonly employed copper-based etching processes, isotropicplasmonic response can be achieved by etching well-defined silver nanocubes. Whilst spherical like shape is typically prevailing in such processes, we established that there is a preferential growth towards silver rhombicuboctahedra (AgRCOs), which is thethermodynamically most stable product of this synthesis. The rhombicuboctahedral morphology is further evidenced by comprehensive characterization with small-angle X-ray scattering in combination with TEM tomographyand high resolution TEM. Wealso elucidate the complete reaction mechanism based on UV-Vis kinetic studies, and the postulated mechanism can also be extended to all copper-based etching processes. △ Less

Submitted 17 October, 2019; originally announced October 2019.

Journal ref: Chem. Mater. 2019, 31, 8, 2822-2827

Site-controlled formation of single Si nanocrystals in a buried SiO2 matrix using ion beam mixing

Authors: Xiaomo Xu, Thomas Prüfer, Daniel Wolf, Hans-Jürgen Engelmann, Lothar Bischoff, René Hübner, Karl-Heinz Heinig, Wolfhard Möller, Stefan Facsko, Johannes von Borany, Gregor Hlawacek

Abstract: For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-energy Si+ or Ne+ ion beam mixing of Si into a buried SiO2 layer followed by thermally activated phase separation. Binary collision approximation and kine… ▽ More For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-energy Si+ or Ne+ ion beam mixing of Si into a buried SiO2 layer followed by thermally activated phase separation. Binary collision approximation and kinetic Monte Carlo methods are conducted to gain atomistic insight into the influence of relevant experimental parameters on the Si NC formation process. Energy-filtered transmission electron microscopy is performed to obtain quantitative values on the Si NC size and distribution in dependence of the layer stack geometry, ion fluence and thermal budget. Employing a focused Ne+ beam from a helium ion microscope, we demonstrate site-controlled self-assembly of single Si NCs. Line irradiation with a fluence of 3000 Ne+/nm2 and a line width of 4 nm leads to the formation of a chain of Si NCs, and a single NC with 2.2 nm diameter is subsequently isolated and visualized in a few nanometer thin lamella prepared by a focused ion beam (FIB). The Si NC is centered between the SiO2 layers and perpendicular to the incident Ne+ beam. △ Less

Submitted 10 October, 2019; originally announced October 2019.

Comments: 10 pages, 6 figures

Journal ref: Beilstein Journal of Nanotechnology 9 (2018) 2883-2892

p-type codoping effect in (Ga,Mn)As: Mn lattice location versus magnetic properties

Authors: Chi Xu, Chenhui Zhang, Mao Wang, Yufang Xie, René Hübner, René Heller, Ye Yuan, Manfred Helm, Xixiang Zhang, Shengqiang Zhou

Abstract: In the present work, we perform a systematic investigation on p-type codoping in (Ga,Mn)As. Through gradually increasing Zn doping concentration, the hole concentration increases, which should theoretically lead to an increase of the Curie temperature (TC) according to the p-d Zener model. Unexpectedly, although the film keeps its epitaxial structure, both TC and the magnetization decrease. The sa… ▽ More In the present work, we perform a systematic investigation on p-type codoping in (Ga,Mn)As. Through gradually increasing Zn doping concentration, the hole concentration increases, which should theoretically lead to an increase of the Curie temperature (TC) according to the p-d Zener model. Unexpectedly, although the film keeps its epitaxial structure, both TC and the magnetization decrease. The samples present a phase transition from ferromagnetism to paramagnetism upon increasing hole concentration. In the intermediate regime, we observe a signature of antiferromagnetism. By using channeling Rutherford backscattering spectrometry and particle-induced x-ray emission, the substitutional Mn atoms are observed to shift to interstitial sites, while more Zn atoms occupy Ga sites, which explains the observed behavior. This is also consistent with first-principles calculations, showing that the complex of substitutional Zn and interstitial Mn has the lowest formation energy. △ Less

Submitted 26 August, 2019; originally announced August 2019.

Comments: 21 pages, 8 figures

Journal ref: Phys. Rev. Materials 3, 084604 (2019)

Low-Temperature Dielectric Anomalies at the Mott Insulator-Metal Transition

Authors: A. Pustogow, R. Rösslhuber, Y. Tan, E. Uykur, M. Wenzel, A. Böhme, A. Löhle, R. Hübner, Y. Saito, A. Kawamoto, J. A. Schlueter, V. Dobrosavljević, M. Dressel

Abstract: The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the frequency- and temperature-dependent dielectric response of the Mott insulator $κ$-(BEDT-TTF)$_{2}$-Cu$_2$(CN)$_3$ when tuning from a quantum spin liquid into the… ▽ More The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the frequency- and temperature-dependent dielectric response of the Mott insulator $κ$-(BEDT-TTF)$_{2}$-Cu$_2$(CN)$_3$ when tuning from a quantum spin liquid into the Fermi-liquid state by applying external pressure and chemical substitution of the donor molecules. At low temperatures the coexistence region at the first-order transition leads to a strong enhancement of the quasi-static dielectric constant $ε_1$ when the effective correlations are tuned through the critical value. Several dynamical regimes are identified around the Mott point and vividly mapped through pronounced permittivity crossovers. All experimental trends are captured by dynamical mean-field theory of the single-band Hubbard model supplemented by percolation theory. △ Less

Submitted 28 November, 2019; v1 submitted 9 July, 2019; originally announced July 2019.

Comments: 6 pages, 4 figures

Journal ref: npj Quantum Materials 6, 9 (2021)

Superconductivity in single-crystalline, aluminum- and gallium-hyperdoped germanium

Authors: Slawomir Prucnal, Viton Heera, René Hübner, Mao Wang, Grzegorz P. Mazur, Michał J. Grzybowski, Xin Qin, Ye Yuan, Matthias Voelskow, Wolfgang Skorupa, Lars Rebohle, Manfred Helm, Maciej Sawicki, Shengqiang Zhou

Abstract: Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however the obtained specimen is in polycrystalline form [Herrmannsdörfer et al., Phys. Rev. Lett. 102, 217003 (2009)]. Here, we present superconducting single-crystall… ▽ More Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however the obtained specimen is in polycrystalline form [Herrmannsdörfer et al., Phys. Rev. Lett. 102, 217003 (2009)]. Here, we present superconducting single-crystalline Ge hyperdoped with gallium or aluminium by ion implantation and rear-side flash lamp annealing. The maximum concentration of Al and Ga incorporated into substitutional positions in Ge is eight times higher than the equilibrium solid solubility. This corresponds to a hole concentration above 10^21 cm-3. Using density functional theory in the local density approximation and pseudopotential plane-wave approach, we show that the superconductivity in p-type Ge is phonon-mediated. According to the ab initio calculations the critical superconducting temperature for Al- and Ga-doped Ge is in the range of 0.45 K for 6.25 at.% of dopant concentration being in a qualitative agreement with experimentally obtained values. △ Less

Submitted 15 April, 2019; originally announced April 2019.

Comments: including the suppl. information, 24 pages, accepted at Phys. Rev. Materials

Journal ref: Phys. Rev. Materials 3, 054802 (2019)

Vertical Organic Thin-Film Transistor with Anodized Permeable Base for Very Low Leakage Current

Authors: Felix Dollinger, Kyung-Geun Lim, Yang Li, Erjuan Guo, Peter Formánek, René Hübner, Axel Fischer, Hans Kleemann, Karl Leo

Abstract: The Organic Permeable Base Transistor (OPBT) is currently the fastest organic transistor with a transition frequency of 40 MHz. It relies on a thin aluminum base electrode to control the transistor current. This electrode is surrounded by a native oxide layer for passivation, currently created by oxidation in air. However, this process is not reliable and leads to large performance variations betw… ▽ More The Organic Permeable Base Transistor (OPBT) is currently the fastest organic transistor with a transition frequency of 40 MHz. It relies on a thin aluminum base electrode to control the transistor current. This electrode is surrounded by a native oxide layer for passivation, currently created by oxidation in air. However, this process is not reliable and leads to large performance variations between samples, slow production and relatively high leakage currents. Here, we demonstrate for the first time that electrochemical anodization can be conveniently employed for the fabrication of high performance OPBTs with vastly reduced leakage currents and more controlled process parameters. Very large transmission factors of 99.9996% are achieved, while excellent on/off ratios of 5x10$^5$ and high on-currents greater than 300 mA/cm$^2$ show that the C$_{60}$ semiconductor layer can withstand the electrochemical anodization. These results make anodization an intriguing option for innovative organic transistor design. △ Less

Submitted 29 March, 2019; v1 submitted 28 March, 2019; originally announced March 2019.

Comments: 3 Figures + 5 Figures in Supporting Information

Journal ref: Adv.Mater. 2019, 1900917

Spin Hall magnetoresistance in heterostructures consisting of noncrystalline paramagnetic YIG and Pt

Authors: Michaela Lammel, Richard Schlitz, Kevin Geishendorf, Denys Makarov, Tobias Kosub, Savio Fabretti, Helena Reichlova, Rene Huebner, Kornelius Nielsch, Andy Thomas, Sebastian T. B. Goennenwein

Abstract: The spin Hall magnetoresistance (SMR) effect arises from spin-transfer processes across the interface between a spin Hall active metal and an insulating magnet. While the SMR response of ferrimagnetic and antiferromagnetic insulators has been studied extensively, the SMR of a paramagnetic spin ensemble is not well established. Thus, we investigate herein the magnetoresistive response of as-deposit… ▽ More The spin Hall magnetoresistance (SMR) effect arises from spin-transfer processes across the interface between a spin Hall active metal and an insulating magnet. While the SMR response of ferrimagnetic and antiferromagnetic insulators has been studied extensively, the SMR of a paramagnetic spin ensemble is not well established. Thus, we investigate herein the magnetoresistive response of as-deposited yttrium iron garnet/platinum thin film bilayers as a function of the orientation and the amplitude of an externally applied magnetic field. Structural and magnetic characterization show no evidence for crystalline order or spontaneous magnetization in the yttrium iron garnet layer. Nevertheless, we observe a clear magnetoresistance response with a dependence on the magnetic field orientation characteristic for the SMR. We propose two models for the origin of the SMR response in paramagnetic insulator/Pt heterostructures. The first model describes the SMR of an ensemble of non-interacting paramagnetic moments, while the second model describes the magnetoresistance arising by considering the total net moment. Interestingly, our experimental data are consistently described by the net moment picture, in contrast to the situation in compensated ferrimagnets or antiferromagnets. △ Less

Submitted 28 January, 2019; originally announced January 2019.

Comments: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 114, 252402 (2019)

Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping

Authors: Slawomir Prucnal, Yonder Berencén, Mao Wang, Jörg Grenzer, Matthias Voelskow, Rene Hübner, Yuji Yamamoto, Alexander Scheit, Florian Bärwolf, Vitaly Zviagin, Rüdiger Schmidt-Grund, Marius Grundmann, Jerzy Żuk, Marcin Turek, Andrzej Droździel, Krzysztof Pyszniak, Robert Kudrawiec, Maciej P. Polak, Lars Rebohle, Wolfgang Skorupa, Manfred Helm, Shengqiang Zhou

Abstract: Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of… ▽ More Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of P-doped Ge-Sn alloys. The strain engineering in heavily-P-doped Ge-Sn films is confirmed by x-ray diffraction and micro Raman spectroscopy. The change of the band gap in P-doped Ge-Sn alloy as a function of P concentration is theoretically predicted by density functional theory and experimentally verified by near-infrared spectroscopic ellipsometry. According to the shift of the absorption edge, it is shown that for an electron concentration greater than 1x10^20 cm-3 the band-gap renormalization is partially compensated by the Burstein-Moss effect. These results indicate that Ge-based materials have high potential for use in near-infrared optoelectronic devices, fully compatible with CMOS technology. △ Less

Submitted 7 January, 2019; originally announced January 2019.

Comments: 20 pages, 6 figures

Journal ref: Phys. Rev. Applied 10, 064055 (2018)

Thermal stability of Te-hyperdoped Si: Atomic-scale correlation of the structural, electrical and optical properties

Authors: Mao Wang, R. Hubner, Chi Xu Yufang Xie, Y. Berencen, R. Heller, L. Rebohle, M. Helm, S. Prucnal, Shengqiang Zhou

Abstract: Si hyperdoped with chalcogens (S, Se, Te) is well-known to possess unique properties such as an insulator-to-metal transition and a room-temperature sub-bandgap absorption. These properties are expected to be sensitive to a post-synthesis thermal annealing, since hyperdoped Si is a thermodynamically metastable material. Thermal stability of the as-fabricated hyperdoped Si is of great importance fo… ▽ More Si hyperdoped with chalcogens (S, Se, Te) is well-known to possess unique properties such as an insulator-to-metal transition and a room-temperature sub-bandgap absorption. These properties are expected to be sensitive to a post-synthesis thermal annealing, since hyperdoped Si is a thermodynamically metastable material. Thermal stability of the as-fabricated hyperdoped Si is of great importance for the device fabrication process involving temperature-dependent steps like ohmic contact formation. Here, we report on the thermal stability of the as-fabricated Te-hyperdoped Si subjected to isochronal furnace anneals from 250 °C to 1200 °C. We demonstrate that Te-hyperdoped Si exhibits thermal stability up to 400 °C with a duration of 10 minutes that even helps to further improve the crystalline quality, the electrical activation of Te dopants and the room-temperature sub-band gap absorption. At higher temperatures, however, Te atoms are found to move out from the substitutional sites with a migration energy of EM = 2.1+/-0.1 eV forming inactive clusters and precipitates that impair the structural, electrical and optical properties. These results provide further insight into the underlying physical state transformation of Te dopants in a metastable compositional regime caused by post-synthesis thermal annealing as well as pave the way for the fabrication of advanced hyperdoped Si-based devices. △ Less

Submitted 4 January, 2019; originally announced January 2019.

Journal ref: Phys. Rev. Materials 3, 044606 (2019)

Free-carrier dynamics in Au$_{2}$Pb probed by optical conductivity measurements

Authors: R. Kemmler, R. Hübner, A. Löhle, D. Neubauer, I. Voloshenko, L. M. Schoop, M. Dressel, A V. Pronin

Abstract: We measured the optical reflectivity of the Dirac material Au$_{2}$Pb in a broad frequency range (30 - 48 000 cm$^{-1}$) for temperatures between 9 and 300 K. The optical conductivity, computed from the reflectivity, is dominated by free-carrier contributions from topologically trivial bulk bands at all temperatures. The temperature-independent total plasma frequency of these carriers is 3.9… ▽ More We measured the optical reflectivity of the Dirac material Au$_{2}$Pb in a broad frequency range (30 - 48 000 cm$^{-1}$) for temperatures between 9 and 300 K. The optical conductivity, computed from the reflectivity, is dominated by free-carrier contributions from topologically trivial bulk bands at all temperatures. The temperature-independent total plasma frequency of these carriers is 3.9 $\pm$ 0.2 eV. Overall, optical response of Au$_{2}$Pb is typically metallic with no signs of localization and bad-metal behavior. △ Less

Submitted 24 October, 2018; originally announced October 2018.

Comments: 10 pages, IOP style

Journal ref: J. Phys.: Condens. Matter 30, 485403 (2018)

Epitaxial Mn5Ge3 (100) layer on Ge(100) substrates obtained by flash lamp annealing

Authors: Yufang Xie, Ye Yuan, Mao Wang, Chi Xu, René Hübner, Jörg Grenzer, Yu-Jia Zeng, Manfred Helm, Shengqiang Zhou, Slawomir Prucnal

Abstract: Mn5Ge3 thin films have been demonstrated as a promising spin-injector material for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) substrates. In this letter we present the growth of epitaxial Mn5Ge3 films on Ge (100) substrates. The Mn5Ge3 film is synthetized via sub-second solid-state reaction between Mn and Ge upon flash lamp annealing for 20 ms at… ▽ More Mn5Ge3 thin films have been demonstrated as a promising spin-injector material for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) substrates. In this letter we present the growth of epitaxial Mn5Ge3 films on Ge (100) substrates. The Mn5Ge3 film is synthetized via sub-second solid-state reaction between Mn and Ge upon flash lamp annealing for 20 ms at the ambient pressure. The single crystalline Mn5Ge3 is ferromagnetic with a Curie temperature of 283 K. Both the c-axis of hexagonal Mn5Ge3 and the magnetic easy axis are parallel to the Ge (100) surface. The millisecond-range flash epitaxy provides a new avenue for the fabrication of Ge-based spin-injectors fully compatible with CMOS technology. △ Less

Submitted 23 October, 2018; originally announced October 2018.

Comments: 10 pages, 5 figures, submitted to Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 113, 222401 (2018)

Three-dimensional composition and electric potential mapping of III-V core-multishell nanowires by correlative STEM and holographic tomography

Authors: Daniel Wolf, René Hübner, Tore Niermann, Sebastian Sturm, Paola Prete, Nico Lovergine, Bernd Büchner, Axel Lubk

Abstract: The non-destructive characterization of nanoscale devices, such as those based on semiconductor nanowires, in terms of functional potentials is crucial for correlating device properties with their morphological/materials features, as well as for precisely tuning and optimizing their growth process. Electron holographic tomography (EHT) has been used in the past to reconstruct the total potential d… ▽ More The non-destructive characterization of nanoscale devices, such as those based on semiconductor nanowires, in terms of functional potentials is crucial for correlating device properties with their morphological/materials features, as well as for precisely tuning and optimizing their growth process. Electron holographic tomography (EHT) has been used in the past to reconstruct the total potential distribution in 3D but hitherto lacked a quantitative approach to separate potential variations due to chemical composition changes (mean inner potential - MIP) and space charges. In this letter, we combine and correlate EHT and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) tomography on an individual <111> oriented GaAs-AlGaAs core-multishell nanowire (NW). We obtain excellent agreement between both methods in terms of the determined Al concentration within the AlGaAs shell, as well as thickness variations of the few nanometer thin GaAs shell acting as quantum well tube. Subtracting the MIP determined from the STEM tomogram, enables us to observe functional potentials at the NW surfaces and at the Au-NW interface, both ascribed to surface/interface pinning of the semiconductor Fermi level. △ Less

Submitted 9 October, 2018; originally announced October 2018.

Journal ref: Nano Letters, 2018, 18 (8), 4777-4784

Structure-property relationship of Co$_2$MnSi thin films in response to He$^+$ -irradiation

Authors: F. Hammerath, R. Bali, R. Huebner, M. R. D. Brandt, S. Rodan, K. Potzger, R. Boettger, Y. Sakuraba, B. Buechner, S. Wurmehl

Abstract: We investigated the structure-property relationship of Co$_2$MnSi Heusler thin films upon the irradiation with He$^+$ ions. The variation of the crystal structure with increasing ion fluence has been probed using nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM), and associated with the corresponding changes of the magnetic behavior. A decrease of both the structural orde… ▽ More We investigated the structure-property relationship of Co$_2$MnSi Heusler thin films upon the irradiation with He$^+$ ions. The variation of the crystal structure with increasing ion fluence has been probed using nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM), and associated with the corresponding changes of the magnetic behavior. A decrease of both the structural order and the moment in saturation is observed. Specifically, we detect a direct transition from a highly $L2_1$-ordered to a fully $A2$-disordered structure type and quantify the evolution of the $A2$ structural contribution as a function of ion fluence. Complementary TEM analysis reveals a spatially-resolved distribution of the $L2_1$ and $A2$ phases showing that the $A2$ disorder starts at the upper part of the films. The structural degradation in turn leads to a decreasing magnetic moment in saturation in response to the increasing fluence. △ Less

Submitted 19 September, 2018; originally announced September 2018.

Comments: 9 pages, 5 figures

Extended Infrared Photoresponse in Te-Hyperdoped Si at Room Temperature

Authors: Mao Wang, Y. Berencén, E. García-Hemme, S. Prucnal, R. Hübner, Ye Yuan, Chi Xu, L. Rebohle, R. Böttger, R. Heller, H. Schneider, W. Skorupa, M. Helm, Shengqiang Zhou

Abstract: Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong room-temperature sub-band-gap photoresponse of photodiodes based on Si hyperdoped with tellurium. The epitaxially recrystallized Te-hyperdoped Si layers are developed… ▽ More Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong room-temperature sub-band-gap photoresponse of photodiodes based on Si hyperdoped with tellurium. The epitaxially recrystallized Te-hyperdoped Si layers are developed by ion implantation combined with pulsed-laser melting and incorporate Te-dopant concentrations several orders of magnitude above the solid solubility limit. With increasing Te concentration, the Te-hyperdoped layer changes from insulating to quasi-metallic behavior with a finite conductivity as the temperature tends to zero. The optical absorptance is found to increase monotonically with increasing Te concentration and extends well into the mid-infrared range. Temperature-dependent optoelectronic photoresponse unambiguously demonstrates that the extended infrared photoresponsivity from Te-hyperdoped Si p-n photodiodes is mediated by a Te intermediate band within the upper half of the Si band gap. This work contributes to pave the way toward establishing a Si-based broadband infrared photonic system operating at room temperature. △ Less

Submitted 4 September, 2018; originally announced September 2018.

Comments: 18 pages, 7 figures

Journal ref: Phys. Rev. Applied 10, 024054 (2018)

Nematicity of correlated systems driven by anisotropic chemical phase separation

Authors: Ye Yuan, René Hübner, Magdalena Birowska, Chi Xu, Mao Wang, Slawomir Prucnal, Rafal Jakiela, Kay Potzger, Roman Böttger, Stefan Facsko, Jacek A. Majewski, Manfred Helm, Maciej Sawicki, Shengqiang Zhou, Tomasz Dietl

Abstract: The origin of nematicity, i.e., in-plane rotational symmetry breaking, and in particular the relative role played by spontaneous unidirectional ordering of spin, orbital, or charge degrees of freedom, is a challenging issue of magnetism, unconventional superconductivity, and quantum Hall effect systems, discussed in the context of doped semiconductor systems, such as Ga$_{1-x}$Mn$_x$As, Cu$_x$Bi… ▽ More The origin of nematicity, i.e., in-plane rotational symmetry breaking, and in particular the relative role played by spontaneous unidirectional ordering of spin, orbital, or charge degrees of freedom, is a challenging issue of magnetism, unconventional superconductivity, and quantum Hall effect systems, discussed in the context of doped semiconductor systems, such as Ga$_{1-x}$Mn$_x$As, Cu$_x$Bi$_2$Se$_3$, and Ga(Al)As/Al$_x$Ga$_{1-x}$As quantum wells, respectively. Here, guided by our experimental and theoretical results for In$_{1-x}$Fe$_x$As, we demonstrate that spinodal phase separation at the growth surface (that has a lower symmetry than the bulk) can lead to a quenched nematic order of alloy components, which then governs low temperature magnetic and magnetotransport properties, in particular the magnetoresistance anisotropy whose theory for the $C_{2v}$ symmetry group is advanced here. These findings, together with earlier data for Ga$_{1-x}$Mn$_x$As, show under which conditions anisotropic chemical phase separation accounts for the magnitude of transition temperature to a collective phase or merely breaks its rotational symmetry. We address the question to what extent the directional distribution of impurities or alloy components setting in during the growth may account for the observed nematicity in other classes of correlated systems. △ Less

Submitted 2 November, 2018; v1 submitted 16 July, 2018; originally announced July 2018.

Comments: 16 pages and 11 figures

Journal ref: Phys. Rev. Materials 2, 114601 (2018)

Nanomagnetism of magnetoelectric granular thin-film antiferromagnets

Authors: Patrick Appel, Brendan J. Shields, Tobias Kosub, René Hübner, Jürgen Faßbender, Denys Makarov, Patrick Maletinsky

Abstract: Antiferromagnets have recently emerged as attractive platforms for spintronics applications, offering fundamentally new functionalities compared to their ferromagnetic counterparts. While nanoscale thin film materials are key to the development of future antiferromagnetic spintronics technologies, experimental tools to explore such films on the nanoscale are still sparse. Here, we offer a solution… ▽ More Antiferromagnets have recently emerged as attractive platforms for spintronics applications, offering fundamentally new functionalities compared to their ferromagnetic counterparts. While nanoscale thin film materials are key to the development of future antiferromagnetic spintronics technologies, experimental tools to explore such films on the nanoscale are still sparse. Here, we offer a solution to this technological bottleneck, by addressing the ubiquitous surface magnetisation of magnetoelectic antiferromagnets in a granular thin film sample on the nanoscale using single-spin magnetometry in combination with spin-sensitive transport experiments. Specifically, we quantitatively image the evolution of individual nanoscale antiferromagnetic domains in 200-nm thin-films of Cr$_2$O$_3$ in real space and across the paramagnet-to-antiferromagnet phase transition. These experiments allow us to discern key properties of the Cr$_2$O$_3$ thin film, including the mechanism of domain formation and the strength of exchange coupling between individual grains comprising the film. Our work offers novel insights into Cr$_2$O$_3$'s magnetic ordering mechanism and establishes single spin magnetometry as a novel, widely applicable tool for nanoscale addressing of antiferromagnetic thin films. △ Less

Submitted 7 June, 2018; originally announced June 2018.

Comments: 22 pages, 7 figures

Up to 40 % reduction of the GaAs band gap energy via strain engineering in core/shell nanowires

Authors: L. Balaghi, G. Bussone, R. Grifone, R. Hübner, J. Grenzer, M. Ghorbani-Asl, A. Krasheninnikov, H. Schneider, M. Helm, E. Dimakis

Abstract: The great possibilities for strain engineering in core/shell nanowires have been explored as an alternative route to tailor the properties of binary III-V semiconductors without changing their chemical composition. In particular, we demonstrate that the GaAs core in GaAs/In(x)Ga(1-x)As or GaAs/In(x)Al(1-x)As core/shell nanowires can sustain unusually large misfit strains that would have been impos… ▽ More The great possibilities for strain engineering in core/shell nanowires have been explored as an alternative route to tailor the properties of binary III-V semiconductors without changing their chemical composition. In particular, we demonstrate that the GaAs core in GaAs/In(x)Ga(1-x)As or GaAs/In(x)Al(1-x)As core/shell nanowires can sustain unusually large misfit strains that would have been impossible in conventional thin-film heterostructures. The built-in strain in the core can be regulated via the composition and the thickness of the shell. Thick enough shells become almost strain-free, whereas the thin core undergoes a predominantly-hydrostatic tensile strain, which causes the reduction of the GaAs band gap energy. For the highest strain of 7 % in this work (obtained for x=0.54), a remarkable reduction of the band gap by 40 % was achieved in agreement with theoretical calculations. Such strong modulation of its electronic properties renders GaAs suitable for near-infrared nano-photonics and presumably high electron mobility nano-transistors. △ Less

Submitted 28 March, 2018; originally announced March 2018.

Comments: 12 pages, 4 figures

Optical conductivity of the Weyl semimetal NbP

Authors: D. Neubauer, A. Yaresko, Weiwu Li, A. Löhle, R. Hübner, M. B. Schilling, C. Shekhar, C. Felser, M. Dressel, A. V. Pronin

Abstract: The optical properties of (001)-oriented NbP single crystals have been studied in a wide spectral range from 6 meV to 3 eV from room temperature down to 10 K. The itinerant carriers lead to a Drude-like contribution to the optical response; we can further identify two pronounced phonon modes and interband transitions starting already at rather low frequencies. By comparing our experimental finding… ▽ More The optical properties of (001)-oriented NbP single crystals have been studied in a wide spectral range from 6 meV to 3 eV from room temperature down to 10 K. The itinerant carriers lead to a Drude-like contribution to the optical response; we can further identify two pronounced phonon modes and interband transitions starting already at rather low frequencies. By comparing our experimental findings to the calculated interband optical conductivity, we can assign the features observed in the measured conductivity to certain interband transitions. In particular, we find that transitions between the electronic bands spilt by spin-orbit coupling dominate the interband conductivity of NbP below 100 meV. At low temperatures, the momentum-relaxing scattering rate of the itinerant carriers in NbP is very small, leading to macroscopic characteristic length scales of the momentum relaxation of approximately 0.5 $μ$m. △ Less

Submitted 26 March, 2018; originally announced March 2018.

Comments: 7.5 pages

Journal ref: Phys. Rev. B 98, 195203 (2018)

CMOS-compatible controlled hyperdoping of silicon nanowires

Authors: Yonder Berencén, Slawomir Prucnal, Wolfhard Möller, René Hübner, Lars Rebohle, Roman Böttger, Markus Glaser, Tommy Schönherr, Ye Yuan, Mao Wang, Yordan M. Georgiev, Artur Erbe, Alois Lugstein, Manfred Helm, Shengqiang Zhou, Wolfgang Skorupa

Abstract: Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and conduction bands.[1,2] Recently, bulk Si hyperdoped with chalcogens or transition metals has been demonstrated to be an appropriate intermediate-band material for S… ▽ More Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and conduction bands.[1,2] Recently, bulk Si hyperdoped with chalcogens or transition metals has been demonstrated to be an appropriate intermediate-band material for Si-based short-wavelength infrared photodetectors.[3-5] Intermediate-band nanowires could potentially be used instead of bulk materials to overcome the Shockley-Queisser limit and to improve efficiency in solar cells,[6-9] but fundamental scientific questions in hyperdoping Si nanowires require experimental verification. The development of a method for obtaining controlled hyperdoping levels at the nanoscale concomitant with the electrical activation of dopants is, therefore, vital to understanding these issues. Here, we show a CMOS-compatible technique based on non-equilibrium processing for the controlled doping of Si at the nanoscale with dopant concentrations several orders of magnitude greater than the equilibrium solid solubility. Through the nanoscale spatially controlled implantation of dopants, and a bottom-up template-assisted solid phase recrystallization of the nanowires with the use of millisecond-flash lamp annealing, we form Se-hyperdoped Si/SiO2 core/shell nanowires that have a room-temperature sub-band gap optoelectronic photoresponse when configured as a photoconductor device. △ Less

Submitted 20 February, 2018; originally announced February 2018.

Comments: 21 pages, 4 figures (Main text)

Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction

Authors: Ye Yuan, Mao Wang, Chi Xu, René Hübner, Roman Böttger, Rafal Jakiela, Manfred Helm, Maciej Sawicki, Shengqiang Zhou

Abstract: In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn is obtained by ion implantation combined with pulsed laser melting. The sample shows variable-range hopping transport behavior with a Coulomb gap in the vicinity of the Fermi energy, and the activation energy is reduced by an external magnetic field. A blocking super-paramagnetism is observed rather than ferromagnetism. Below t… ▽ More In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn is obtained by ion implantation combined with pulsed laser melting. The sample shows variable-range hopping transport behavior with a Coulomb gap in the vicinity of the Fermi energy, and the activation energy is reduced by an external magnetic field. A blocking super-paramagnetism is observed rather than ferromagnetism. Below the blocking temperature, the sample exhibits a colossal negative magnetoresistance. Our studies confirm that the disorder-induced electronic phase separation occurs in (Ga,Mn)As samples with a Mn concentration in the insulator-metal transition regime, and it can account for the observed superparamagnetism and the colossal magnetoresistance. △ Less

Submitted 20 February, 2018; originally announced February 2018.

Comments: 14 pages, 7 figures

Journal ref: J. Phys.: Condens. Matter 30 095801 (2018)

Quantum Spin Liquids Unveil the Genuine Mott State

Authors: A. Pustogow, M. Bories, A. Löhle, R. Rösslhuber, E. Zhukova, B. Gorshunov, S. Tomić, J. A. Schlueter, R. Hübner, T. Hiramatsu, Y. Yoshida, G. Saito, R. Kato, T. -H. Lee, V. Dobrosavljević, S. Fratini, M. Dressel

Abstract: The Widom line identifies the locus in the phase diagram where a supercritical gas crosses over from gas-like to a more liquid-like behavior. A similar transition exists in correlated electron liquids, where the interplay of Coulomb repulsion, bandwidth and temperature triggers between the Mott insulating state and an incoherent conduction regime. Here we explore the electrodynamic response of thr… ▽ More The Widom line identifies the locus in the phase diagram where a supercritical gas crosses over from gas-like to a more liquid-like behavior. A similar transition exists in correlated electron liquids, where the interplay of Coulomb repulsion, bandwidth and temperature triggers between the Mott insulating state and an incoherent conduction regime. Here we explore the electrodynamic response of three organic quantum spin liquids with different degrees of effective correlation, where the absence of magnetic order enables unique insight into the nature of the genuine Mott state down to the most relevant low-temperature region. Combining optical spectroscopy with pressure-dependent dc transport and theoretical calculations, we succeeded to construct a phase diagram valid for all Mott insulators on a quantitative scale. In the vicinity of the low-temperature phase boundary, we discover metallic fluctuations within the Mott gap, exhibiting enhanced absorption upon cooling that is not present in antiferromagnetic Mott insulators. Our findings reveal the phase coexistence region and Pomeranchuk-like anomaly of the Mott transition, previously predicted but never observed. △ Less

Submitted 19 October, 2017; originally announced October 2017.

Comments: Supplementary information after Acknowledgements

Journal ref: Nat. Mater. 17, 773-777 (2018)

Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As

Authors: Ye Yuan, Chi Xu, René Hübner, Rafal Jakiela, Roman Böttger, Manfred Helm, Maciej Sawicki, Tomasz Dietl, Shengqiang Zhou

Abstract: Ion implantation of Mn combined with pulsed laser melting is employed to obtain two representative compounds of dilute ferromagnetic semiconductors (DFSs): Ga1-xMnxAs and In1-xMnxAs. In contrast to films deposited by the widely used molecular beam epitaxy, neither Mn interstitials nor As antisites are present in samples prepared by the method employed here. Under these conditions the influence of… ▽ More Ion implantation of Mn combined with pulsed laser melting is employed to obtain two representative compounds of dilute ferromagnetic semiconductors (DFSs): Ga1-xMnxAs and In1-xMnxAs. In contrast to films deposited by the widely used molecular beam epitaxy, neither Mn interstitials nor As antisites are present in samples prepared by the method employed here. Under these conditions the influence of localization on the hole-mediated ferromagnetism is examined in two DFSs with a differing strength of p-d coupling. On the insulating side of the transition, ferromagnetic signatures persist to higher temperatures in In1-xMnxAs compared to Ga1-xMnxAs with the same Mn concentration x. This substantiates theoretical suggestions that stronger p-d coupling results in an enhanced contribution to localization, which reduces hole-mediated ferromagnetism. Furthermore, the findings support strongly the heterogeneous model of electronic states at the localization boundary and point to the crucial role of weakly localized holes in mediating efficient spin-spin interactions even on the insulator side of the metal-insulator transition. △ Less

Submitted 14 September, 2017; originally announced September 2017.

Comments: 23 pages, 10 figures, to appear at Phys. Rev. Mater

Journal ref: Phys. Rev. Mater 1, 054401 (2017)

Towards diluted magnetism in TaAs

Authors: Yu Liu, Zhilin Li, Liwei Guo, Xiaolong Chen, Ye Yuan, Chi Xu, René Hübner, Shavkat Akhmadaliev, Arkady V. Krasheninnikov, Alpha T. N'Diaye, Elke Arenholz, Manfred Helm, Shengqiang Zhou

Abstract: Magnetism in Weyl semimetals is desired to investigate the interaction between the magnetic moments and Weyl fermions, e.g. to explore anomalous quantum Hall phenomena. Here we demonstrate that proton irradiation is an effective tool to induce ferromagnetism in the Weyl semimetal TaAs. The intrinsic magnetism is observed with a transition temperature above room temperature. The magnetic moments fr… ▽ More Magnetism in Weyl semimetals is desired to investigate the interaction between the magnetic moments and Weyl fermions, e.g. to explore anomalous quantum Hall phenomena. Here we demonstrate that proton irradiation is an effective tool to induce ferromagnetism in the Weyl semimetal TaAs. The intrinsic magnetism is observed with a transition temperature above room temperature. The magnetic moments from d states are found to be localized around Ta atoms. Further, the first-principles calculations indicate that the d states localized on the nearest-neighbor Ta atoms of As vacancy sites are responsible for the observed magnetic moments and the long-ranged magnetic order. The results show the feasibility of inducing ferromagnetism in Weyl semimetals so that they may facilitate the applications of this material in spintronics. △ Less

Submitted 28 September, 2017; v1 submitted 13 September, 2017; originally announced September 2017.

Comments: 20 pages, 6 figures

Journal ref: Phys. Rev. Materials 1, 044203 (2017)

Disentangling magnetic order on nanostructured surfaces

Authors: Denise Erb, Kai Schlage, Lars Bocklage, René Hübner, Daniel Geza Merkel, Rudolf Rüffer, Hans-Christian Wille, Ralf Röhlsberger

Abstract: We present a synchrotron-based X-ray scattering technique which allows disentangling magnetic properties of heterogeneous systems with nanopatterned surfaces. This technique combines the nmrange spatial resolution of surface morphology features provided by Grazing Incidence Small Angle X-ray Scattering and the high sensitivity of Nuclear Resonant Scattering to magnetic order. A single experiment t… ▽ More We present a synchrotron-based X-ray scattering technique which allows disentangling magnetic properties of heterogeneous systems with nanopatterned surfaces. This technique combines the nmrange spatial resolution of surface morphology features provided by Grazing Incidence Small Angle X-ray Scattering and the high sensitivity of Nuclear Resonant Scattering to magnetic order. A single experiment thus allows attributing magnetic properties to structural features of the sample; chemical and structural properties may be correlated analogously. We demonstrate how this technique shows the correlation between structural growth and evolution of magnetic properties for the case of a remarkable magnetization reversal in a structurally and magnetically nanopatterned sample system. △ Less

Submitted 6 July, 2017; v1 submitted 8 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. Materials 1, 023001 (2017)

Roughness-induced domain structure in perpendicular Co/Ni multilayers

Authors: N. R. Lee-Hone, R. Thanhoffer, V. Neu, R. Schäfer, M. Arora, R. Hübner, D. Suess, D. M. Broun, E. Girt

Abstract: We investigate the correlation between roughness, remanence and coercivity in Co/Ni films grown on Cu seed layers of varying thickness. Increasing the Cu seed layer thickness of Ta/Cu/8x[Co/Ni] thin films increases the roughness of the films. In-plane magnetization loops show that both the remanance and coercivity increase with increasing seed layer roughness. Polar Kerr microscopy and magnetic fo… ▽ More We investigate the correlation between roughness, remanence and coercivity in Co/Ni films grown on Cu seed layers of varying thickness. Increasing the Cu seed layer thickness of Ta/Cu/8x[Co/Ni] thin films increases the roughness of the films. In-plane magnetization loops show that both the remanance and coercivity increase with increasing seed layer roughness. Polar Kerr microscopy and magnetic force microscopy reveal that the domain density also increases with roughness. Finite element micromagnetic simulations performed on structures with periodically modulated surfaces provide further insight. They confirm the connection between domain density and roughness, and identify the microsocpic structure of the domain walls as the source of the increased remanence in rough films. The simulations predict that the character of the domain walls changes from Bloch-like in smooth films to Néel-like for rougher films. △ Less

Submitted 29 May, 2017; v1 submitted 14 December, 2016; originally announced December 2016.

Purely Antiferromagnetic Magnetoelectric Random Access Memory

Authors: Tobias Kosub, Martin Kopte, Ruben Hühne, Patrick Appel, Brendan Shields, Patrick Maletinsky, René Hübner, Maciej Oskar Liedke, Jürgen Fassbender, Oliver G. Schmidt, Denys Makarov

Abstract: Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50 fold reduction of the writing threshold compared to ferromagnet-based counterparts, is robust against magnetic disturbances and ex… ▽ More Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50 fold reduction of the writing threshold compared to ferromagnet-based counterparts, is robust against magnetic disturbances and exhibits no ferromagnetic hysteresis losses. Using the magnetoelectric antiferromagnet Cr2O3, we demonstrate reliable isothermal switching via gate voltage pulses and all-electric readout at room temperature. As no ferromagnetic component is present in the system, the writing magnetic field does not need to be pulsed for readout, allowing permanent magnets to be used. Based on our prototypes of these novel systems, we construct a comprehensive model of the magnetoelectric selection mechanism in thin films of magnetoelectric antiferromagnets. We identify that growth induced effects lead to emergent ferrimagnetism, which is detrimental to the robustness of the storage. After pinpointing lattice misfit as the likely origin, we provide routes to enhance or mitigate this emergent ferrimagnetism as desired. Beyond memory applications, the AF-MERAM concept introduces a general all-electric interface for antiferromagnets and should find wide applicability in purely antiferromagnetic spintronics devices. △ Less

Submitted 21 November, 2016; originally announced November 2016.

Comments: Main text (4 figures) + supplementary information (7 figures)

The role of the internal demagnetizing field in a surface-modulated magnonic crystal

Authors: Manuel Langer, Falk Röder, Rodolfo A. Gallardo, Tobias Schneider, Sven Stienen, Christophe Gatel, René Hübner, Lothar Bischoff, Kilian Lenz, Jürgen Lindner, Pedro Landeros, Jürgen Fassbender

Abstract: Magnonic crystals with locally alternating properties and specific periodicities exhibit interesting effects, such as a multitude of different spin-wave states and large band gaps. This work aims for demonstrating and understanding the key role of local demagnetizing fields in such systems. To achieve this, hybrid structures are investigated consisting of a continuous thin film with a stripe modul… ▽ More Magnonic crystals with locally alternating properties and specific periodicities exhibit interesting effects, such as a multitude of different spin-wave states and large band gaps. This work aims for demonstrating and understanding the key role of local demagnetizing fields in such systems. To achieve this, hybrid structures are investigated consisting of a continuous thin film with a stripe modulation on top favorable due to the adjustability of the magnonic effects with the modulation size. For a direct access to the spin dynamics, a magnonic crystal was reconstructed from `bottom-up', i.e., the structural shape as well as the internal field landscape of the structure were experimentally obtained on the nanoscale using electron holography. Subsequently, both properties were utilized to perform dynamic response calculations. The simulations yield the frequency-field dependence as well as the angular dependence of spin waves in a magnonic crystal and reveal the governing role of the internal field landscape around the backward-volume geometry. The complex angle-dependent spin-wave behavior is described for a 360 degree in-plane rotation of an external field by connecting the internal field landscape with the individual spin-wave localization. △ Less

Submitted 20 October, 2016; v1 submitted 1 September, 2016; originally announced September 2016.

Journal ref: Phys. Rev. B 95, 184405 (2017)

Suppressing the cellular breakdown in silicon supersaturated with titanium

Authors: Fang Liu, S Prucnal, R Hübner, Ye Yuan, W Skorupa, M Helm, Shengqiang Zhou

Abstract: Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted Si layer can be well recrystallized by liquid phase epitaxy and solid phase epitaxy, respectively. Cross-sectional transmission electron microscopy of Ti-implanted Si after liquid phase epitaxy shows the so-called growth… ▽ More Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted Si layer can be well recrystallized by liquid phase epitaxy and solid phase epitaxy, respectively. Cross-sectional transmission electron microscopy of Ti-implanted Si after liquid phase epitaxy shows the so-called growth interface breakdown or cellular breakdown owing to the occurrence of constitutional supercooling in the melt. The appearance of cellular breakdown prevents further recrystallization. However, the out-diffusion and cellular breakdown can be effectively suppressed by solid phase epitaxy during flash lamp annealing due to the high velocity of amorphous-crystalline interface and the low diffusion velocity for Ti in the solid phase. △ Less

Submitted 19 August, 2016; originally announced August 2016.

Comments: 10 pages, 4 figures

Journal ref: J. Phys. D: Appl. Phys. 49, 245104 (2016)