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Atomistic theory of twist-angle dependent intralayer and interlayer exciton properties in twisted bilayer materials
Authors:
Indrajit Maity,
Arash A. Mostofi,
Johannes Lischner
Abstract:
Twisted bilayers of two-dimensional (2D) materials have emerged as a highly tunable platform to study and engineer properties of excitons. However, the atomistic description of these properties has remained a significant challenge as a consequence of the large unit cells of the emergent moiré superlattices. To address this problem, we introduce an efficient approach to solve the Bethe-Salpeter equ…
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Twisted bilayers of two-dimensional (2D) materials have emerged as a highly tunable platform to study and engineer properties of excitons. However, the atomistic description of these properties has remained a significant challenge as a consequence of the large unit cells of the emergent moiré superlattices. To address this problem, we introduce an efficient approach to solve the Bethe-Salpeter equation that exploits the localization of atomic Wannier functions. We then use this approach to study intra- and interlayer excitons in twisted WS$_{2}$/WSe$_{2}$ at a range of twist angles. In agreement with experiment, we find that the optical spectrum exhibits three low-energy peaks for twist angles small than $2^\circ$. The energy splitting between the peaks is described accurately. We also find two low-energy interlayer excitons with weak oscillator strengths. Our approach opens up new opportunities for the design of light-matter interactions in ultrathin materials.
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Submitted 16 June, 2024;
originally announced June 2024.
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Coexisting charge density waves in twisted bilayer NbSe2
Authors:
Christopher T. S. Cheung,
Zachary A. H. Goodwin,
Yixuan Han,
Jiong Lu,
Arash A. Mostofi,
Johannes Lischner
Abstract:
Twisted bilayers of two-dimensional materials have emerged as a highly tunable platform for studying broken symmetry phases. While most interest has been focused on emergent states in systems whose constituent monolayers do not feature broken symmetry states, assembling monolayers that exhibit ordered states into twisted bilayers can also give rise to interesting phenomena. Here, we use large-scal…
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Twisted bilayers of two-dimensional materials have emerged as a highly tunable platform for studying broken symmetry phases. While most interest has been focused on emergent states in systems whose constituent monolayers do not feature broken symmetry states, assembling monolayers that exhibit ordered states into twisted bilayers can also give rise to interesting phenomena. Here, we use large-scale first-principles density-functional theory calculations to study the atomic structure of twisted bilayer $\mathrm{{N}b{S}e_2}$ whose constituent monolayers feature a charge density wave. We find that different charge density wave states coexist in the ground state of the twisted bilayer: monolayer-like $3\times 3$ triangular and hexagonal charge density waves are observed in low-energy stacking regions, while stripe charge density waves are found in the domain walls surrounding the low-energy stacking regions. These predictions, which can be tested by scanning tunneling microscopy experiments, highlight the potential to create complex charge density wave ground states in twisted bilayer systems and can serve as a starting point for understanding superconductivity occurring at low temperatures.
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Submitted 31 May, 2024;
originally announced May 2024.
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One-dimensional magnetic conduction channels across zigzag graphene nanoribbon/hexagonal boron nitride heterojunctions
Authors:
Michele Pizzochero,
Nikita V. Tepliakov,
Johannes Lischner,
Arash A. Mostofi,
Efthimios Kaxiras
Abstract:
We examine the electronic structure of recently fabricated in-plane heterojunctions of zigzag graphene nanoribbons embedded in hexagonal boron nitride. We focus on hitherto unexplored interface configurations in which both edges of the nanoribbon are bonded to the same chemical species, either boron or nitrogen atoms. Using ab initio and mean-field Hubbard model calculations, we reveal the emergen…
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We examine the electronic structure of recently fabricated in-plane heterojunctions of zigzag graphene nanoribbons embedded in hexagonal boron nitride. We focus on hitherto unexplored interface configurations in which both edges of the nanoribbon are bonded to the same chemical species, either boron or nitrogen atoms. Using ab initio and mean-field Hubbard model calculations, we reveal the emergence of one-dimensional magnetic conducting channels at these interfaces. These channels originate from the energy shift of the magnetic interface states that is induced by charge transfer between the nanoribbon and hexagonal boron nitride. We further address the response of these heterojunctions to external electric and magnetic fields, demonstrating the tunability of energy and spin splittings in the electronic structure. Our findings establish that zigzag graphene nanoribbon/hexagonal boron nitride heterojunctions are a suitable platform for exploring and engineering spin transport in the atomically thin limit, with potential applications in integrated spintronic devices
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Submitted 31 May, 2024;
originally announced May 2024.
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Hot Carriers from Intra- and Interband Transitions in Gold-Silver Alloy Nanoparticles
Authors:
Shreyas Ramachandran,
Simao Joao,
Hanwen Jin,
Johannes Lischner
Abstract:
Hot electrons and holes generated from the decay of localized surface plasmons in metallic nanoparticles can be harnessed for applications in solar energy conversion and sensing. In this paper, we study the generation of hot carriers in large spherical gold-silver alloy nanoparticles using a recently developed atomistic modelling approach that combines a solution of Maxwell's equations with large-…
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Hot electrons and holes generated from the decay of localized surface plasmons in metallic nanoparticles can be harnessed for applications in solar energy conversion and sensing. In this paper, we study the generation of hot carriers in large spherical gold-silver alloy nanoparticles using a recently developed atomistic modelling approach that combines a solution of Maxwell's equations with large-scale tight-binding simulations. We find that hot-carrier properties depend sensitively on the alloy composition. Specifically, nanoparticles with a large gold fraction produce hot carriers under visible light illumination while nanoparticles with a large silver fraction require higher photon energies to produce hot carriers. Moreover, most hot carriers in nanoparticles with a large gold fraction originate from interband transitions which give rise to energetic holes and "cold" electrons near the Fermi level. Increasing the silver fraction enhances the generation rate of hot carriers from intraband transitions which produce energetic electrons and "cold" holes. These findings demonstrate that alloy composition is a powerful tuning parameter for the design of nanoparticles for applications in solar energy conversion and sensing that require precise control of hot-carrier properties.
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Submitted 7 February, 2024;
originally announced February 2024.
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Crystal Facet Effect in Plasmonic Catalysis
Authors:
Yicui Kang,
Simão M. João,
Rui Lin,
Li Zhu,
Junwei Fu,
Weng-Chon,
Cheong,
Seunghoon Lee,
Kilian Frank,
Bert Nickel,
Min Liu,
Johannes Lischner,
Emiliano Cortés
Abstract:
In the realm of plasmonic catalytic systems, much attention has been devoted to the plasmon-derived mechanisms, yet the influence of nanoparticles' crystal facets in this type of processes has been sparsely investigated. In this work, we study the plasmon-assisted electrocatalytic CO2 reduction reaction using three different shapes of plasmonic Au nanoparticles - nanocube (NC), rhombic dodecahedro…
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In the realm of plasmonic catalytic systems, much attention has been devoted to the plasmon-derived mechanisms, yet the influence of nanoparticles' crystal facets in this type of processes has been sparsely investigated. In this work, we study the plasmon-assisted electrocatalytic CO2 reduction reaction using three different shapes of plasmonic Au nanoparticles - nanocube (NC), rhombic dodecahedron (RD) and octahedron (OC) - with three different exposed facets: {100}, {110} and {111}, respectively. These particles were synthesized with similar sizes and LSPR wavelengths to reveal the role of the facet more than other contributions to the plasmon-assisted reaction. Upon plasmon excitation, Au OCs exhibited nearly a doubling in the Faradaic efficiency of CO (FE(CO)) and a remarkable threefold enhancement in the partial current density of CO (j(CO)) compared to the non-illuminated response, NCs also demonstrated an improved performance under illumination. In contrast, Au RDs showed nearly the same performance in dark or light conditions. Temperature-dependent experiments ruled out heat as the main factor in the enhanced response of Au OCs and NCs. Large-scale atomistic simulations of the nanoparticles' electronic structure and electromagnetic modeling revealed higher hot carrier abundance and electric field enhancement on Au OCs and NCs compared to RDs. Abundant hot carriers on edges facilitate molecular activation, leading to enhanced selectivity and activity. Thus, OCs with the highest edge/facet ratio exhibited the strongest enhancement in FE(CO) and j(CO) upon illumination. This observation is further supported by plasmon-assisted H2 evolution reaction experiments. Our findings highlight the dominance of low coordinated sites over facets in plasmonic catalytic processes, providing valuable insights for designing more efficient catalysts for solar fuels production.
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Submitted 23 October, 2023;
originally announced October 2023.
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Valley-polarized Exitonic Mott Insulator in WS2/WSe2 Moiré Superlattice
Authors:
Zhen Lian,
Yuze Meng,
Lei Ma,
Indrajit Maity,
Li Yan,
Qiran Wu,
Xiong Huang,
Dongxue Chen,
Xiaotong Chen,
Xinyue Chen,
Mark Blei,
Takashi Taniguchi,
Kenji Watanabe,
Sefaattin Tongay,
Johannes Lischner,
Yong-Tao Cui,
Su-Fei Shi
Abstract:
Strongly enhanced electron-electron interaction in semiconducting moiré superlattices formed by transition metal dichalcogenides (TMDCs) heterobilayers has led to a plethora of intriguing fermionic correlated states. Meanwhile, interlayer excitons in a type-II aligned TMDC heterobilayer moiré superlattice, with electrons and holes separated in different layers, inherit this enhanced interaction an…
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Strongly enhanced electron-electron interaction in semiconducting moiré superlattices formed by transition metal dichalcogenides (TMDCs) heterobilayers has led to a plethora of intriguing fermionic correlated states. Meanwhile, interlayer excitons in a type-II aligned TMDC heterobilayer moiré superlattice, with electrons and holes separated in different layers, inherit this enhanced interaction and strongly interact with each other, promising for realizing tunable correlated bosonic quasiparticles with valley degree of freedom. We employ photoluminescence spectroscopy to investigate the strong repulsion between interlayer excitons and correlated electrons in a WS2/WSe2 moiré superlattice and combine with theoretical calculations to reveal the spatial extent of interlayer excitons and the band hierarchy of correlated states. We further find that an excitonic Mott insulator state emerges when one interlayer exciton occupies one moiré cell, evidenced by emerging photoluminescence peaks under increased optical excitation power. Double occupancy of excitons in one unit cell requires overcoming the energy cost of exciton-exciton repulsion of about 30-40 meV, depending on the stacking configuration of the WS2/WSe2 heterobilayer. Further, the valley polarization of the excitonic Mott insulator state is enhanced by nearly one order of magnitude. Our study demonstrates the WS2/WSe2 moiré superlattice as a promising platform for engineering and exploring new correlated states of fermion, bosons, and a mixture of both.
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Submitted 24 August, 2023; v1 submitted 21 August, 2023;
originally announced August 2023.
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Atomistic theory of hot carrier relaxation in large plasmonic nanoparticles
Authors:
S. M. João,
Hanwen Jin,
Johannes Lischner
Abstract:
Recently, there has been significant interest in harnessing hot carriers generated from the decay of localized surface plasmons in metallic nanoparticles for applications in photocatalysis, photovoltaics and sensing. In this work, we present an atomistic approach to predict the population of hot carriers under continuous wave illumination in large nanoparticles. For this, we solve the equation of…
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Recently, there has been significant interest in harnessing hot carriers generated from the decay of localized surface plasmons in metallic nanoparticles for applications in photocatalysis, photovoltaics and sensing. In this work, we present an atomistic approach to predict the population of hot carriers under continuous wave illumination in large nanoparticles. For this, we solve the equation of motion of the density matrix taking into account both excitation of hot carriers as well as subsequent relaxation effects. We present results for spherical Au and Ag nanoparticles with up to $250,000$ atoms. We find that the population of highly energetic carriers depends both on the material and the nanoparticle size. We also study the increase in the electronic temperature upon illumination and find that Ag nanoparticles exhibit a much larger temperature increase than Au nanoparticles. Finally, we investigate the effect of using different models for the relaxation matrix but find that qualitative features of the hot-carrier population are robust.
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Submitted 7 August, 2023;
originally announced August 2023.
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Breakdown of phonon band theory in MgO
Authors:
Gabriele Coiana,
Johannes Lischner,
Paul Tangney
Abstract:
We present a series of detailed images of the distribution of kinetic energy among frequencies and wavevectors in the bulk of an MgO crystal as it is heated slowly until it melts. These spectra, which are Fourier transforms of mass-weighted velocity-velocity correlation functions calculated from accurate molecular dynamics (MD) simulations, provide a valuable perspective on the growth of thermal d…
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We present a series of detailed images of the distribution of kinetic energy among frequencies and wavevectors in the bulk of an MgO crystal as it is heated slowly until it melts. These spectra, which are Fourier transforms of mass-weighted velocity-velocity correlation functions calculated from accurate molecular dynamics (MD) simulations, provide a valuable perspective on the growth of thermal disorder in ionic crystals. We use them to explain why the most striking and rapidly-progressing departures from a band structure occur among longitudinal optical (LO) modes, which would be the least active modes at low temperature (T) if phonons did not interact. The degradation of the LO band begins, at low T, as an anomalously-large broadening of modes near the center of the Brillouin zone (BZ), which gradually spreads towards the BZ boundary. The LO band all but vanishes before the crystal melts, and transverse optical (TO) modes' spectral peaks become so broad that the TO branches no longer appear band-like. Acoustic bands remain relatively well defined until melting of the crystal manifests in the spectra as their sudden disappearance. We argue that, even at high T, the long wavelength acoustic (LWA) phonons of an ionic crystal can remain partially immune to disorder generated by its LO phonons; whereas, even at low T, its LO phonons can be strongly affected by LWA phonons. This is because LO displacements average out in much less than the period of an LWA phonon; whereas during each period of an LO phonon an LWA phonon appears as a quasistatic perturbation of the crystal, which warps the LO mode's intrinsic electric field. LO phonons are highly sensitive to acoustic warping of their intrinsic fields because their frequencies depend strongly on them: They cause the large frequency difference between LO and TO bands known as LO-TO splitting.
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Submitted 15 December, 2023; v1 submitted 20 July, 2023;
originally announced July 2023.
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Optical Properties of Charged Defects in Monolayer MoS$_2$
Authors:
Martik Aghajanian,
Arash A. Mostofi,
Johannes Lischner
Abstract:
We present theoretical calculations of the optical spectrum of monolayer MoS$_2$ with a charged defect. In particular, we solve the Bethe-Salpeter equation based on an atomistic tight-binding model of the MoS$_2$ electronic structure which allows calculations for large supercells. The defect is modelled as a point charge whose potential is screened by the MoS$_2$ electrons. We find that the defect…
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We present theoretical calculations of the optical spectrum of monolayer MoS$_2$ with a charged defect. In particular, we solve the Bethe-Salpeter equation based on an atomistic tight-binding model of the MoS$_2$ electronic structure which allows calculations for large supercells. The defect is modelled as a point charge whose potential is screened by the MoS$_2$ electrons. We find that the defect gives rise to new peaks in the optical spectrum approximately 100-200 meV below the first free exciton peak. These peaks arise from transitions involving in-gap bound states induced by the charged defect. Our findings are in good agreement with experimental measurements.
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Submitted 9 July, 2023;
originally announced July 2023.
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Combining the $Δ$-Self-Consistent-Field and GW Methods for Predicting Core Electron Binding Energies in Periodic Solids
Authors:
Juhan Matthias Kahk,
Johannes Lischner
Abstract:
For the computational prediction of core electron binding energies in solids, two distinct kinds of modelling strategies have been pursued: the $Δ$-Self-Consistent-Field method based on density functional theory (DFT), and the GW method. In this study, we examine the formal relationship between these two approaches, and establish a link between them. The link arises from the equivalence, in DFT, b…
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For the computational prediction of core electron binding energies in solids, two distinct kinds of modelling strategies have been pursued: the $Δ$-Self-Consistent-Field method based on density functional theory (DFT), and the GW method. In this study, we examine the formal relationship between these two approaches, and establish a link between them. The link arises from the equivalence, in DFT, between the total energy difference result for the first ionization energy, and the eigenvalue of the highest occupied state, in the limit of infinite supercell size. This link allows us to introduce a new formalism, which highlights how in DFT - even if the total energy difference method is used to calculate core electron binding energies - the accuracy of the results still implicitly depends on the accuracy of the eigenvalue at the valence band maximum in insulators, or at the Fermi level in metals. We examine, whether incorporating a quasiparticle correction for this eigenvalue from GW theory improves the accuracy of the calculated core electron binding energies, and find that the inclusion of vertex corrections is required for achieving quantitative agreement with experiment.
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Submitted 9 June, 2023;
originally announced June 2023.
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Theory of hot-carrier generation in bimetallic plasmonic catalysts
Authors:
Hanwen Jin,
Matias Herran,
Emiliano Cortes,
Johannes Lischner
Abstract:
Bimetallic nanoreactors in which a plasmonic metal is used to funnel solar energy towards a catalytic metal have recently been studied experimentally, but a detailed theoretical understanding of these systems is lacking. Here, we present theoretical results of hot-carrier generation rates of different Au-Pd nanoarchitectures. In particular, we study spherical core-shell nanoparticles with a Au cor…
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Bimetallic nanoreactors in which a plasmonic metal is used to funnel solar energy towards a catalytic metal have recently been studied experimentally, but a detailed theoretical understanding of these systems is lacking. Here, we present theoretical results of hot-carrier generation rates of different Au-Pd nanoarchitectures. In particular, we study spherical core-shell nanoparticles with a Au core and a Pd shell as well as antenna-reactor systems consisting of a large Au nanoparticle with acts as antenna and a smaller Pd satellite nanoparticle separated by a gap. In addition, we investigate an antenna-reactor system in which the satellite is a core-shell nanoparticle. Hot-carrier generation rates are obtained from an atomistic quantum-mechanical modelling technique which combines a solution of Maxwell's equation with a tight-binding description of the nanoparticle electronic structure. We find that antenna-reactor systems exhibit significantly higher hot-carrier generation rates in the catalytic material than the core-shell system as a result of strong electric field enhancements associated with the gap between the antenna and the satellite. For these systems, we also study the dependence of hot-carrier generation rate on the size of the gap, the radius of the antenna nanoparticle and the direction of light polarization. Our insights pave the way towards a mechanistic understanding of hot-carrier generation in heterogeneous nanostructures for photocatalysis and other energy conversion applications.
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Submitted 4 June, 2023;
originally announced June 2023.
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Dirac half-semimetallicity and antiferromagnetism in graphene nanoribbon/hexagonal boron nitride heterojunctions
Authors:
Nikita V. Tepliakov,
Ruize Ma,
Johannes Lischner,
Efthimios Kaxiras,
Arash A. Mostofi,
Michele Pizzochero
Abstract:
Half-metals have been envisioned as active components in spintronic devices by virtue of their completely spin-polarized electrical currents. Actual materials hosting half-metallic phases, however, remain scarce. Here, we predict that recently fabricated heterojunctions of zigzag nanoribbons embedded in two-dimensional hexagonal boron nitride are half-semimetallic, featuring fully spin-polarized D…
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Half-metals have been envisioned as active components in spintronic devices by virtue of their completely spin-polarized electrical currents. Actual materials hosting half-metallic phases, however, remain scarce. Here, we predict that recently fabricated heterojunctions of zigzag nanoribbons embedded in two-dimensional hexagonal boron nitride are half-semimetallic, featuring fully spin-polarized Dirac points at the Fermi level. The half-semimetallicity originates from the transfer of charges from hexagonal boron nitride to the embedded graphene nanoribbon. These charges give rise to opposite energy shifts of the states residing at the two edges while preserving their intrinsic antiferromagnetic exchange coupling. Upon doping, an antiferromagnetic-to-ferrimagnetic phase transition occurs in these heterojunctions, with the sign of the excess charge controlling the spatial localization of the net magnetic moments. Our findings demonstrate that such heterojunctions realize tunable one-dimensional conducting channels of spin-polarized Dirac fermions that are seamlessly integrated into a two-dimensional insulator, thus holding promise for the development of carbon-based spintronics.
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Submitted 24 May, 2023;
originally announced May 2023.
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Accelerating GW calculations through machine learned dielectric matrices
Authors:
Mario G. Zauchner,
Andrew Horsfield,
Johannes Lischner
Abstract:
The GW approach produces highly accurate quasiparticle energies, but its application to large systems is computationally challenging, which can be largely attributed to the difficulty in computing the inverse dielectric matrix. To address this challenge, we develop a machine learning approach to efficiently predict density-density response functions (DDRF) in materials. For this, an atomic decompo…
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The GW approach produces highly accurate quasiparticle energies, but its application to large systems is computationally challenging, which can be largely attributed to the difficulty in computing the inverse dielectric matrix. To address this challenge, we develop a machine learning approach to efficiently predict density-density response functions (DDRF) in materials. For this, an atomic decomposition of the DDRF is introduced as well as the neighbourhood density-matrix descriptor both of which transform in the same way under rotations. The resulting DDRFs are then used to evaluate quasiparticle energies via the GW approach. This technique is called the ML-GW approach. To assess the accuracy of this method, we apply it to hydrogenated silicon clusters and find that it reliably reproduces HOMO-LUMO gaps and quasiparticle energy levels. The accuracy of the predictions deteriorates when the approach is applied to larger clusters than those included in the training set. These advances pave the way towards GW calculations of complex systems, such as disordered materials, liquids, interfaces and nanoparticles.
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Submitted 24 July, 2023; v1 submitted 4 May, 2023;
originally announced May 2023.
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Short vs. long range exchange interactions in twisted bilayer graphene
Authors:
Alejandro Jimeno-Pozo,
Zachary A. H. Goodwin,
Pierre A. Pantaleón,
Valerio Vitale,
Lennart Klebl,
Dante M. Kennes,
Arash Mostofi,
Johannes Lischner,
Francisco Guinea
Abstract:
We discuss the effect of long-range interactions within the self-consistent Hartree-Fock (HF) approximation in comparison to short-range atomic Hubbard interactions on the band structure of twisted bilayer graphene (TBG) at charge neutrality for various twist angles. Starting from atomistic calculations, we determine the quasi-particle band structure of TBG with Hubbard interactions for various ma…
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We discuss the effect of long-range interactions within the self-consistent Hartree-Fock (HF) approximation in comparison to short-range atomic Hubbard interactions on the band structure of twisted bilayer graphene (TBG) at charge neutrality for various twist angles. Starting from atomistic calculations, we determine the quasi-particle band structure of TBG with Hubbard interactions for various magnetic orderings: modulated anti-ferromagnetic (MAFM), nodal anti-ferromagnetic (NAFM) and hexagonal anti-ferromagnetic (HAFM). Then, we develop an approach to incorporate these magnetic orderings along with the HF potential in the continuum approximation. Away from the magic angle, we observe a drastic effect of the magnetic order on the band structure of TBG compared to the influence of the HF potential. Near the magic angle, however, the HF potential seems to play a major role on the band structure compared to the magnetic order. These findings suggest that the spin-valley degenerate broken symmetry state often found in HF calculations of charge neutral TBG near the magic angle should favour magnetic order, since the atomistic Hubbard interaction will break this symmetry in favour of spin polarization.
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Submitted 31 March, 2023;
originally announced March 2023.
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The interplay of field-tunable strongly correlated states in a multi-orbital moiré system
Authors:
Aidan J. Campbell,
Valerio Vitale,
Mauro Brotons-Gisbert,
Hyeonjun Baek,
Takashi Taniguchi,
Kenji Watanabe,
Johannes Lischner,
Brian D. Gerardot
Abstract:
The interplay of charge, spin, lattice, and orbital degrees of freedom leads to a wide range of emergent phenomena in strongly correlated systems. In heterobilayer transition metal dichalcogenide moiré systems, recent observations of Mott insulators and generalized Wigner crystals are well described by triangular lattice single-orbital Hubbard models based on K-valley derived moiré bands. Richer p…
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The interplay of charge, spin, lattice, and orbital degrees of freedom leads to a wide range of emergent phenomena in strongly correlated systems. In heterobilayer transition metal dichalcogenide moiré systems, recent observations of Mott insulators and generalized Wigner crystals are well described by triangular lattice single-orbital Hubbard models based on K-valley derived moiré bands. Richer phase diagrams, mapped onto multi-orbital Hubbard models, are possible with hexagonal lattices in $Γ$-valley derived moiré bands and additional layer degrees of freedom. Here we report the tunable interaction between strongly correlated hole states hosted by $Γ$- and K-derived moiré bands in a monolayer MoSe$_2$ / natural WSe$_2$ bilayer device. To precisely probe the nature of the correlated states, we optically characterise the behaviour of exciton-polarons and distinguish the layer and valley degrees of freedom. We find that the honeycomb $Γ$-band gives rise to a charge-transfer insulator described by a two-orbital Hubbard model with inequivalent $Γ_\mathrm{A}$ and $Γ_\mathrm{B}$ orbitals. With an out-of-plane electric field, we re-order the $Γ_\mathrm{B}$- and K-derived bands energetically, driving an abrupt redistribution of carriers to the layer-polarized K orbital where new correlated states are observed. Finally, by fine-tuning the band-alignment, we obtain degeneracy of the $Γ_\mathrm{B}$ and K orbitals at the Fermi level. In this critical condition, stable Wigner crystals with carriers distributed across the two orbitals are observed until the Fermi-level reaches one hole per lattice site, whereupon the system collapses into a filled $Γ_\mathrm{B}$ orbital. Our results establish a platform to investigate the interplay of charge, spin, lattice, and layer geometry in multi-orbital Hubbard model Hamiltonians.
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Submitted 9 March, 2023;
originally announced March 2023.
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Influence of atomic relaxations on the moiré flat band wavefunctions in antiparallel twisted bilayer WS$_{\text{2}}$
Authors:
Laurent Molino,
Leena Aggarwal,
Indrajit Maity,
Ryan Plumadore,
Johannes Lischner,
Adina Luican-Mayer
Abstract:
Twisting bilayers of transition metal dichalcogenides (TMDs) gives rise to a periodic moiré potential resulting in flat electronic bands with localized wavefunctions and enhanced correlation effects. In this work, scanning tunneling microscopy is used to image a WS$_{2}$ bilayer twisted approximately $3^{\circ}$ off the antiparallel alignment. Scanning tunneling spectroscopy reveals the presence o…
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Twisting bilayers of transition metal dichalcogenides (TMDs) gives rise to a periodic moiré potential resulting in flat electronic bands with localized wavefunctions and enhanced correlation effects. In this work, scanning tunneling microscopy is used to image a WS$_{2}$ bilayer twisted approximately $3^{\circ}$ off the antiparallel alignment. Scanning tunneling spectroscopy reveals the presence of localized electronic states in the vicinity of the valence band onset. In particular, the onset of the valence band is observed to occur first in regions with a Bernal stacking in which S atoms are located on top of each other. In contrast, density-functional theory calculations on twisted bilayers which have been relaxed in vacuum predict the highest lying flat valence band to be localized in regions of AA' stacking. However, agreement with the experiment is recovered when the calculations are carried out on bilayers in which the atomic displacements from the unrelaxed positions have been reduced reflecting the influence of the substrate and finite temperature. This demonstrates the delicate interplay of atomic relaxations and the electronic structure of twisted bilayer materials.
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Submitted 22 February, 2023;
originally announced February 2023.
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Electrons surf phason waves in moiré bilayers
Authors:
Indrajit Maity,
Arash A. Mostofi,
Johannes C. Lischner
Abstract:
We investigate the effect of thermal fluctuations on the atomic and electronic structure of a twisted MoSe$_{2}$/WSe$_{2}$ heterobilayer using a combination of classical molecular dynamics and \textit{ab-initio} density functional theory calculations. Our calculations reveal that thermally excited phason modes give rise to an almost rigid motion of the moiré lattice. Electrons and holes in low-ene…
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We investigate the effect of thermal fluctuations on the atomic and electronic structure of a twisted MoSe$_{2}$/WSe$_{2}$ heterobilayer using a combination of classical molecular dynamics and \textit{ab-initio} density functional theory calculations. Our calculations reveal that thermally excited phason modes give rise to an almost rigid motion of the moiré lattice. Electrons and holes in low-energy states are localized in specific stacking regions of the moiré unit cell and follow the thermal motion of these regions. In other words, charge carriers surf phason waves that are excited at finite temperatures. Small displacements at the atomic scale are amplified at the moiré scale, which gives rise to significant surfing speeds. We also show that such surfing survives in the presence of a substrate and disorder. This effect has potential implications for the design of charge and exciton transport devices based on moiré materials.
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Submitted 20 February, 2023;
originally announced February 2023.
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Phason-mediated interlayer exciton diffusion in WS2/WSe2 moiré heterostructure
Authors:
Antonio Rossi,
Jonas Zipfel,
Indrajit Maity,
Monica Lorenzon,
Luca Francaviglia,
Emma C. Regan,
Zuocheng Zhang,
Jacob H. Nie,
Edward Barnard,
Kenji Watanabe,
Takashi Taniguchi,
Eli Rotenberg,
Feng Wang,
Johannes Lischner,
Archana Raja,
Alexander Weber-Bargioni
Abstract:
Moiré potentials in two-dimensional materials have been proven to be of fundamental importance to fully understand the electronic structure of van der Waals heterostructures, from superconductivity to correlated excitonic states. However, understanding how the moiré phonons, so-called phasons, affect the properties of the system still remains an uncharted territory. In this work, we demonstrate ho…
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Moiré potentials in two-dimensional materials have been proven to be of fundamental importance to fully understand the electronic structure of van der Waals heterostructures, from superconductivity to correlated excitonic states. However, understanding how the moiré phonons, so-called phasons, affect the properties of the system still remains an uncharted territory. In this work, we demonstrate how phasons are integral to properly describing and understanding low-temperature interlayer exciton diffusion in WS2/WSe2 heterostructure. We perform photoluminescence (PL) spectroscopy to understand how the coupling between the layers, affected by their relative orientation, impacts the excitonic properties of the system. Samples fabricated with stacking angles of 0° and 60° are investigated taking into account the stacking angle dependence of the two common moiré potential profiles. Additionally, we present spatially and time-resolved exciton diffusion measurements, looking at the photoluminescence emission in a temperature range from 30 K to 250 K. An accurate potential for the two configurations are computed via density functional theory (DFT) calculations. Finally, we perform molecular dynamics simulation in order to visualize the phasons motion, estimating the phason speed at different temperatures, providing novel insights into the mechanics of exciton propagation at low temperatures that cannot be explained within the frame of classical exciton diffusion alone.
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Submitted 18 January, 2023;
originally announced January 2023.
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Imaging gate-induced molecular melting on a graphene field-effect transistor
Authors:
Franklin Liou,
Hsin-Zon Tsai,
Zachary A. H. Goodwin,
Andrew S. Aikawa,
Ethan Ha,
Michael Hu,
Yiming Yang,
Kenji Watanabe,
Takashi Taniguchi,
Alex Zettl,
Johannes Lischner,
Michael F. Crommie
Abstract:
Solid-liquid phase transitions are fundamental physical processes, but atomically-resolved microscopy has yet to capture both the solid and liquid dynamics for such a transition. We have developed a new technique for controlling the melting and freezing of 2D molecular layers on a graphene field-effect transistor (FET) that allows us to image phase transition dynamics via atomically-resolved scann…
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Solid-liquid phase transitions are fundamental physical processes, but atomically-resolved microscopy has yet to capture both the solid and liquid dynamics for such a transition. We have developed a new technique for controlling the melting and freezing of 2D molecular layers on a graphene field-effect transistor (FET) that allows us to image phase transition dynamics via atomically-resolved scanning tunneling microscopy. Back-gate voltages applied to a F4TCNQ-decorated graphene FET induce reversible transitions between a charge-neutral solid phase and a negatively charged liquid phase. Nonequilibrium molecular melting dynamics are visualized by rapidly heating the graphene surface with electrical current and imaging the resulting evolution toward new equilibrium states. An analytical model has been developed that explains the observed equilibrium mixed-state phases based on spectroscopic measurement of both solid and liquid molecular energy levels. Observed non-equilibrium melting dynamics are consistent with Monte Carlo simulations.
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Submitted 23 November, 2022;
originally announced November 2022.
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Effect of Coulomb impurities on the electronic structure of magic angle twisted bilayer graphene
Authors:
Muhammad Sufyan Ramzan,
Zachary A. H. Goodwin,
Arash A. Mostofi,
Agnieszka Kuc,
Johannes Lischner
Abstract:
In graphene, charged defects break the electron-hole symmetry and can even give rise to exotic collapse states when the defect charge exceeds a critical value which is proportional to the Fermi velocity. In this work, we investigate the electronic properties of twisted bilayer graphene (tBLG) with charged defects using tight-binding calculations. Like monolayer graphene, tBLG exhibits linear bands…
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In graphene, charged defects break the electron-hole symmetry and can even give rise to exotic collapse states when the defect charge exceeds a critical value which is proportional to the Fermi velocity. In this work, we investigate the electronic properties of twisted bilayer graphene (tBLG) with charged defects using tight-binding calculations. Like monolayer graphene, tBLG exhibits linear bands near the Fermi level but with a dramatically reduced Fermi velocity near the magic angle (approximately 1.1°). This suggests that the critical value of the defect charge in magic-angle tBLG should also be very small. We find that charged defects give rise to significant changes in the low-energy electronic structure of tBLG. Depending on the defect position in the moiré unit cell, it is possible to open a band gap or to induce an additional flattening of the low-energy valence and conduction bands. Our calculations suggest that the collapse states of the two monolayers hybridize in the twisted bilayer. However, their in-plane localization remains largely unaffected by the presence of the additional twisted layer because of the different length scales of the moiré lattice and the monolayer collapse state wavefunctions. These predictions can be tested in scanning tunnelling spectroscopy experiments.
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Submitted 20 February, 2023; v1 submitted 2 November, 2022;
originally announced November 2022.
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Combining time-dependent density functional theory and the $Δ$SCF approach for accurate core-electron spectra
Authors:
Marcus Annegarn,
Juhan Matthias Kahk,
Johannes Lischner
Abstract:
Spectroscopies that probe electronic excitations from core levels into unoccupied orbitals, such as X-ray absorption spectroscopy and electron energy loss spectroscopy, are widely used to gain insight into the electronic and chemical structure of materials. To support the interpretation of experimental spectra, we assess the performance of a first-principles approach that combines linear-response…
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Spectroscopies that probe electronic excitations from core levels into unoccupied orbitals, such as X-ray absorption spectroscopy and electron energy loss spectroscopy, are widely used to gain insight into the electronic and chemical structure of materials. To support the interpretation of experimental spectra, we assess the performance of a first-principles approach that combines linear-response time-dependent density (TDDFT) functional theory with the $Δ$~self\nobreakdash-consistent field ($Δ$SCF) approach. In particular, we first use TDDFT to calculate the core-level spectrum and then shift the spectrum such that the lowest excitation energy from TDDFT agrees with that from $Δ$SCF. We apply this method to several small molecules and find encouraging agreement between calculated and measured spectra.
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Submitted 9 September, 2022;
originally announced September 2022.
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Fully relativistic $GW$/Bethe-Salpeter calculations in BerkeleyGW: implementation, symmetries, benchmarking, and performance
Authors:
Bradford A. Barker,
Jack Deslippe,
Johannes Lischner,
Manish Jain,
Oleg V. Yazyev,
David A. Strubbe,
Steven G. Louie,
.
Abstract:
Computing the $GW$ quasiparticle bandstructure and Bethe-Salpeter Equation (BSE) absorption spectra for materials with spin-orbit coupling has commonly been done by treating $GW$ corrections and spin-orbit coupling as separate perturbations to density-functional theory. However, accurate treatment of materials with strong spin-orbit coupling often requires a fully relativistic approach using spino…
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Computing the $GW$ quasiparticle bandstructure and Bethe-Salpeter Equation (BSE) absorption spectra for materials with spin-orbit coupling has commonly been done by treating $GW$ corrections and spin-orbit coupling as separate perturbations to density-functional theory. However, accurate treatment of materials with strong spin-orbit coupling often requires a fully relativistic approach using spinor wavefunctions in the Kohn-Sham equation and $GW$/BSE. Such calculations have only recently become available, in particular for the BSE. We have implemented this approach in the plane-wave pseudopotential $GW$/BSE code BerkeleyGW, which is highly parallelized and widely used in the electronic-structure community. We present reference results for quasiparticle bandstructures and optical absorption spectra of solids with different strengths of spin-orbit coupling, including Si, Ge, GaAs, GaSb, CdSe, Au, and Bi$_2$Se$_3$. The calculated quasiparticle band gaps of these systems are found to agree with experiment to within a few tens of meV. The absorption spectrum of GaSb calculated with the fully-relativistic $GW$-BSE captures the large spin-orbit splitting of peaks in the spectrum. For Bi$_2$Se$_3$, we find a drastic change in the low-energy bandstructure compared to that of DFT, with the fully-relativistic treatment of the $GW$ approximation correctly capturing the parabolic nature of the valence and conduction bands after including off-diagonal self-energy matrix elements. We present the detailed methodology, approach to spatial symmetries for spinors, comparison against other codes, and performance compared to spinless $GW$/BSE calculations and perturbative approaches to SOC. This work aims to spur further development of spinor $GW$/BSE methodology in excited-state research software.
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Submitted 1 June, 2022;
originally announced June 2022.
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Unveiling and Manipulating Hidden Symmetries in Graphene Nanoribbons
Authors:
Nikita V. Tepliakov,
Johannes Lischner,
Efthimios Kaxiras,
Arash A. Mostofi,
Michele Pizzochero
Abstract:
Armchair graphene nanoribbons are a highly promising class of semiconductors for all-carbon nanocircuitry. Here, we present a new perspective on their electronic structure from simple model Hamiltonians and $\textit{ab initio}$ calculations. We focus on a specific set of nanoribbons of width $n = 3p+2$, where $n$ is the number of carbon atoms across the nanoribbon axis and $p$ is a positive intege…
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Armchair graphene nanoribbons are a highly promising class of semiconductors for all-carbon nanocircuitry. Here, we present a new perspective on their electronic structure from simple model Hamiltonians and $\textit{ab initio}$ calculations. We focus on a specific set of nanoribbons of width $n = 3p+2$, where $n$ is the number of carbon atoms across the nanoribbon axis and $p$ is a positive integer. We demonstrate that the energy-gap opening in these nanoribbons originates from the breaking of a previously unidentified hidden symmetry by long-ranged hopping of $π$-electrons and structural distortions occurring at the edges. This hidden symmetry can be restored or manipulated through the application of in-plane lattice strain, which enables continuous energy-gap tuning, the emergence of Dirac points at the Fermi level, and topological quantum phase transitions. Our work establishes an original interpretation of the semiconducting character of armchair graphene nanoribbons and offers guidelines for rationally designing their electronic structure.
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Submitted 29 November, 2022; v1 submitted 5 March, 2022;
originally announced March 2022.
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Exciton-polarons in the presence of strongly correlated electronic states in a MoSe$_2$/WSe$_2$ moiré superlattice
Authors:
Aidan J. Campbell,
Mauro Brotons-Gisbert,
Hyeonjun Baek,
Valerio Vitale,
Takashi Taniguchi,
Kenji Watanabe,
Johannes Lischner,
Brian D. Gerardot
Abstract:
Two-dimensional moiré materials provide a highly tunable platform to investigate strongly correlated electronic states. Such emergent many-body phenomena can be optically probed in moiré systems created by stacking two layers of transition metal dichalcogenide semiconductors: optically injected excitons can interact with itinerant carriers occupying narrow moiré bands to form exciton-polarons sens…
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Two-dimensional moiré materials provide a highly tunable platform to investigate strongly correlated electronic states. Such emergent many-body phenomena can be optically probed in moiré systems created by stacking two layers of transition metal dichalcogenide semiconductors: optically injected excitons can interact with itinerant carriers occupying narrow moiré bands to form exciton-polarons sensitive to strong correlations. Here, we investigate the behaviour of excitons dressed by a Fermi sea localised by the moiré superlattice of a molybdenum diselenide (MoSe$_2$) / tungsten diselenide (WSe$_2$) twisted hetero-bilayer. At a multitude of fractional fillings of the moiré lattice, we observe ordering of both electrons and holes into stable correlated electronic states. Magneto-optical measurements reveal extraordinary Zeeman splittings of the exciton-polarons due to exchange interactions in the correlated hole phases, with a maximum close to the correlated state at one hole per site. The temperature dependence of the Zeeman splitting reveals antiferromagnetic ordering of the correlated holes across a wide range of fractional fillings. Our results illustrate the nature of exciton-polarons in the presence of strongly correlated electronic states and reveal the rich potential of the MoSe$_2$/WSe$_2$ platform for investigations of Fermi-Hubbard and Bose-Hubbard physics.
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Submitted 28 April, 2022; v1 submitted 17 February, 2022;
originally announced February 2022.
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Plasmon-induced hot carriers from interband and intraband transitions in large noble metal nanoparticles
Authors:
Hanwen Jin,
Juhan Matthias Kahk,
Dimitrios A. Papaconstantopoulos,
Aires Ferreira,
Johannes Lischner
Abstract:
Hot electrons generated from the decay of localized surface plasmons in metallic nanostructures have the potential to transform photocatalysis, photodetection and other optoelectronic applications. However, the understanding of hot-carrier generation in realistic nanostructures, in particular the relative importance of interband and intraband transitions, remains incomplete. Here we report theoret…
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Hot electrons generated from the decay of localized surface plasmons in metallic nanostructures have the potential to transform photocatalysis, photodetection and other optoelectronic applications. However, the understanding of hot-carrier generation in realistic nanostructures, in particular the relative importance of interband and intraband transitions, remains incomplete. Here we report theoretical predictions of hot-carrier generation rates in spherical nanoparticles of the noble metals silver, gold and copper with diameters up to 30 nanometers obtained from a novel atomistic linear-scaling approach. As the nanoparticle size increases the relative importance of interband transitions from d-bands to sp-bands relative to surface-enabled sp-band to sp-band transitions increases. We find that the hot-hole generation rate is characterized by a peak at the onset of the d-bands, while the position of the corresponding peak in the hot-electron distribution can be controlled through the illumination frequency. In contrast, intraband transitions give rise to hot electrons, but relatively cold holes. Importantly, increasing the dielectric constant of the environment removes hot carriers generated from interband transitions, while increasing the number of hot carriers from intraband transitions. The insights resulting from our work enable the design of nanoparticles for specific hot-carrier applications through their material composition, size and dielectric environment.
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Submitted 25 January, 2022;
originally announced January 2022.
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Electronic Structure of Monolayer and Bilayer Black Phosphorus with Charged Defects
Authors:
Martik Aghajanian,
Arash A. Mostofi,
Johannes Lischner
Abstract:
We use an atomistic approach to study the electronic properties of monolayer and bilayer black phosphorus in the vicinity of a charged defect. In particular, we combine screened defect potentials obtained from first-principles linear response theory with large-scale tight-binding simulations to calculate the wavefunctions and energies of bound acceptor and donor states. As a consequence of the ani…
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We use an atomistic approach to study the electronic properties of monolayer and bilayer black phosphorus in the vicinity of a charged defect. In particular, we combine screened defect potentials obtained from first-principles linear response theory with large-scale tight-binding simulations to calculate the wavefunctions and energies of bound acceptor and donor states. As a consequence of the anisotropic band structure, the defect states in these systems form distorted hydrogenic orbitals with a different ordering than in isotropic materials. For the monolayer, we study the dependence of the binding energies of charged adsorbates on the defect height and the dielectric constant of a substrate in an experimental setup. We also compare our results to an anisotropic effective mass model and find quantitative and qualitative differences when the charged defect is close to the black phosphorus or when the screening from the substrate is weak. For the bilayer, we compare results for charged adsorbates and charged intercalants and find that intercalants induce more prominent secondary peaks in the local density of states because they interact strongly with electronic states on both layers. These new insights can be directly tested in scanning tunneling spectroscopy measurements and enable a detailed understanding of the role of Coulomb impurities in electronic devices.
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Submitted 18 December, 2021; v1 submitted 10 December, 2021;
originally announced December 2021.
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Predicting Core Electron Binding Energies in Elements of the First Transition Series Using the $Δ$-Self-Consistent-Field Method
Authors:
Juhan Matthias Kahk,
Johannes Lischner
Abstract:
The $Δ$-Self-Consistent-Field ($Δ$SCF) method has been established as an accurate and computationally efficient approach for calculating absolute core electron binding energies for light elements up to chlorine, but relatively little is known about the performance of this method for heavier elements. In this work, we present $Δ$SCF calculations of transition metal (TM) 2$p$ core electron binding e…
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The $Δ$-Self-Consistent-Field ($Δ$SCF) method has been established as an accurate and computationally efficient approach for calculating absolute core electron binding energies for light elements up to chlorine, but relatively little is known about the performance of this method for heavier elements. In this work, we present $Δ$SCF calculations of transition metal (TM) 2$p$ core electron binding energies for a series of 60 molecular compounds containing the first row transition metals Ti, V, Cr, Mn, Fe and Co. We find that the calculated TM 2$p_{3/2}$ binding energies are less accurate than the results for the lighter elements with a mean absolute error (MAE) of 0.73 eV compared to experimental gas phase photoelectron spectroscopy results. However, our results suggest that the error depends mostly on the element and is rather insensitive to the chemical environment. By applying an element-specific correction to the binding energies the MAE is reduced to 0.20 eV, similar to the accuracy obtained for the lighter elements.
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Submitted 8 December, 2021;
originally announced December 2021.
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Atomistic hartree theory and crystal field of twisted double bilayer graphene near the magic angle
Authors:
Christopher T. S. Cheung,
Zachary A. H. Goodwin,
Valerio Vitale,
Johannes Lischner,
Arash A. Mostofi
Abstract:
Twisted double bilayer graphene (tDBLG) is a moiré material that has recently generated significant interest because of the observation of correlated phases near the magic angle. We carry out atomistic Hartree theory calculations to study the role of electron-electron interactions in the normal state. In contrast to twisted bilayer graphene (tBLG), we find that such interactions do not result in s…
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Twisted double bilayer graphene (tDBLG) is a moiré material that has recently generated significant interest because of the observation of correlated phases near the magic angle. We carry out atomistic Hartree theory calculations to study the role of electron-electron interactions in the normal state. In contrast to twisted bilayer graphene (tBLG), we find that such interactions do not result in significant doping-dependent deformations of the electronic band structure. However, interactions play an important role for the electronic structure in the presence of a perpendicular electric field as they screen the external field. Finally, we analyze the contribution of the Hartree potential to the crystal field, i.e. the on-site energy difference between the inner and outer layers. We find that the on-site energy obtained from Hartree theory has the same sign, but a smaller magnitude compared to previous studies in which the on-site energy was determined by fitting tight-binding results to ab initio density-functional theory (DFT) band structures. To understand this quantitative difference, we analyze the ab initio Kohn-Sham potential obtained from DFT and find that a subtle interplay of electron-electron and electron-ion interactions determines the magnitude of the on-site potential.
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Submitted 9 March, 2022; v1 submitted 4 November, 2021;
originally announced November 2021.
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Substitutional tin acceptor states in black phosphorus
Authors:
Mark Wentink,
Julian Gaberle,
Martik Aghajanian,
Arash A. Mostofi,
Neil J. Curson,
Johannes Lischner,
Steven R. Schofield,
Alexander L. Shluger,
Anthony J. Kenyon
Abstract:
Nominally-pure black phosphorus (BP) is commonly found to be a p-type semiconductor, suggesting the ubiquitious presence of impurity species or intrinsic, charged defects. Moreover, scanning tunnelling microscopy (STM) images of black phosphorus reveal the presence of long-ranged double-lobed defect features superimposed onto the surface atomic lattice. We show that both the p-type doping of BP an…
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Nominally-pure black phosphorus (BP) is commonly found to be a p-type semiconductor, suggesting the ubiquitious presence of impurity species or intrinsic, charged defects. Moreover, scanning tunnelling microscopy (STM) images of black phosphorus reveal the presence of long-ranged double-lobed defect features superimposed onto the surface atomic lattice. We show that both the p-type doping of BP and the defect features observed in STM images can be attributed to substitutional tin impurities. We show that black phosphorus samples produced through two common synthesis pathways contain tin impurities, and we demonstrate that the ground state of substitutional tin impurities is negatively charged for a wide range of Fermi level positions within the BP bandgap. The localised negative charge of the tin impurities induces hydrogenic states in the bandgap and it is the 2p level that sits at the valence band edge that gives rise to the double-lobed features observed in STM images.
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Submitted 19 October, 2021;
originally announced October 2021.
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Imaging reconfigurable molecular concentration on a graphene field-effect transistor
Authors:
Franklin Liou,
Hsin-Zon Tsai,
Andrew S. Aikawa,
Kyler C. Natividad,
Eric Tang,
Ethan Ha,
Alexander Riss,
Kenji Watanabe,
Takashi Taniguchi,
Johannes Lischner,
Alex Zettl,
Michael F. Crommie
Abstract:
The spatial arrangement of adsorbates deposited onto a clean surface in vacuum typically cannot be reversibly tuned. Here we use scanning tunneling microscopy to demonstrate that molecules deposited onto graphene field-effect transistors exhibit reversible, electrically-tunable surface concentration. Continuous gate-tunable control over the surface concentration of charged F4TCNQ molecules was ach…
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The spatial arrangement of adsorbates deposited onto a clean surface in vacuum typically cannot be reversibly tuned. Here we use scanning tunneling microscopy to demonstrate that molecules deposited onto graphene field-effect transistors exhibit reversible, electrically-tunable surface concentration. Continuous gate-tunable control over the surface concentration of charged F4TCNQ molecules was achieved on a graphene FET at T = 4.5K. This capability enables precisely controlled impurity doping of graphene devices and also provides a new method for determining molecular energy level alignment based on the gate-dependence of molecular concentration. The gate-tunable molecular concentration can be explained by a dynamical molecular rearrangement process that reduces total electronic energy by maintaining Fermi level pinning in the device substrate. Molecular surface concentration in this case is fully determined by the device back-gate voltage, its geometric capacitance, and the energy difference between the graphene Dirac point and the molecular LUMO level.
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Submitted 15 September, 2021;
originally announced September 2021.
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Lifetime effects and satellites in the photoelectron spectrum of tungsten metal
Authors:
Curran Kalha,
Laura E. Ratcliff,
Julio J. Gutiérrez Moreno,
Stephan Mohr,
Mervi Mantsinen,
Nathalie K. Fernando,
Pardeep K. Thakur,
Tien-Lin Lee,
Hsiang-Han Tseng,
Tim S. Nunney,
Juhan M. Kahk,
Johannes Lischner,
Anna Regoutz
Abstract:
Tungsten is an important and versatile transition metal and has a firm place at the heart of many technologies. A popular experimental technique for the characterisation of tungsten and tungsten-based compounds is X-ray photoelectron spectroscopy (XPS), which enables the assessment of chemical states and electronic structure through the collection of core level and valence band spectra. However, i…
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Tungsten is an important and versatile transition metal and has a firm place at the heart of many technologies. A popular experimental technique for the characterisation of tungsten and tungsten-based compounds is X-ray photoelectron spectroscopy (XPS), which enables the assessment of chemical states and electronic structure through the collection of core level and valence band spectra. However, in the case of metallic tungsten, open questions remain regarding the origin, nature, and position of satellite features that are prominent in the photoelectron spectrum. These satellites are a fingerprint of the electronic structure of the material and have not been thoroughly investigated, at times leading to their misinterpretation. The present work combines high-resolution soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) with reflection electron energy loss spectroscopy (REELS) and a multi-tiered ab-initio theoretical approach, including density functional theory (DFT) and many-body perturbation theory (G0W0 and GW+C), to disentangle the complex set of experimentally observed satellite features attributed to the generation of plasmons and interband transitions. This combined experiment-theory strategy is able to uncover previously undocumented satellite features, improving our understanding of their direct relationship to tungsten's electronic structure. Furthermore, it lays the groundwork for future studies into tungsten based mixed-metal systems and holds promise for the re-assessment of the photoelectron spectra of other transition and post-transition metals, where similar questions regarding satellite features remain.
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Submitted 10 September, 2021;
originally announced September 2021.
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Chiral valley phonons and flat phonon bands in moiré materials
Authors:
Indrajit Maity,
Arash A. Mostofi,
Johannes Lischner
Abstract:
We investigate the chirality of phonon modes in twisted bilayer WSe2 and demonstrate distinct chiral behavior of the $K/K^\prime$ valley phonons for twist angles close to $0^{\circ}$ and close to $60^{\circ}$. In particular, multiple chiral non-degenerate $K/K^\prime$ valley phonons are found for twist angles near $60^{\circ}$ whereas no non-degenerate chiral modes are found for twist angles close…
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We investigate the chirality of phonon modes in twisted bilayer WSe2 and demonstrate distinct chiral behavior of the $K/K^\prime$ valley phonons for twist angles close to $0^{\circ}$ and close to $60^{\circ}$. In particular, multiple chiral non-degenerate $K/K^\prime$ valley phonons are found for twist angles near $60^{\circ}$ whereas no non-degenerate chiral modes are found for twist angles close to $0^\circ$. Moreover, we discover two sets of emergent chiral valley modes that originate from an inversion symmetry breaking at the moiré scale and find similar modes in moiré patterns of strain-engineered bilayers WSe2 and MoSe2/WSe2 heterostructures. At the energy gap between acoustic and optical modes, the formation of flat phonon bands for a broad range of twist angles is observed in the twisted bilayer WSe2. Our findings are relevant for understanding electron-phonon and exciton-phonon scattering in moiré materials and also for the design of phononic analogues of flat band electrons.
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Submitted 4 January, 2022; v1 submitted 9 August, 2021;
originally announced August 2021.
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Flat bands, electron interactions and magnetic order in magic-angle mono-trilayer graphene
Authors:
Zachary A. H. Goodwin,
Lennart Klebl,
Valerio Vitale,
Xia Liang,
Vivek Gogtay,
Xavier van Gorp,
Dante M. Kennes,
Arash A. Mostofi,
Johannes Lischner
Abstract:
Starting with twisted bilayer graphene, graphene-based moiré materials have recently been established as a new platform for studying strong electron correlations. In this paper, we study twisted graphene monolayers on trilayer graphene and demonstrate that this system can host flat bands when the twist angle is close to the magic-angle of 1.16$^\circ$. When monolayer graphene is twisted on ABA tri…
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Starting with twisted bilayer graphene, graphene-based moiré materials have recently been established as a new platform for studying strong electron correlations. In this paper, we study twisted graphene monolayers on trilayer graphene and demonstrate that this system can host flat bands when the twist angle is close to the magic-angle of 1.16$^\circ$. When monolayer graphene is twisted on ABA trilayer graphene, the flat bands are not isolated, but are intersected by a Dirac cone with a large Fermi velocity. In contrast, graphene twisted on ABC trilayer graphene (denoted AtABC) exhibits a gap between flat and remote bands. Since ABC trilayer graphene and twisted bilayer graphene are known to host broken-symmetry phases, we further investigate the ostensibly similar magic angle AtABC system. We study the effect of electron-electron interactions in AtABC using both Hartree theory and an atomic Hubbard theory to calculate the magnetic phase diagram as a function of doping, twist angle, and perpendicular electric field. Our analysis reveals a rich variety of magnetic orderings, including ferromagnetism and ferrimagnetism, and demonstrates that a perpendicular electric field makes AtABC more susceptible to magnetic ordering.
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Submitted 23 August, 2021; v1 submitted 26 May, 2021;
originally announced May 2021.
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Layer-Resolved Many-Electron Interactions in Delafossite PdCoO2 from Standing-Wave Photoemission Spectroscopy
Authors:
Qiyang Lu,
Henrique Martins,
J. Matthias Kahk,
Gaurab Rimal,
Seongshik Oh,
Inna Vishik,
Matthew Brahlek,
William C. Chueh,
Johannes Lischner,
Slavomir Nemsak
Abstract:
When a three-dimensional material is constructed by stacking different two-dimensional layers into an ordered structure, new and unique physical properties can emerge. An example is the delafossite PdCoO2, which consists of alternating layers of metallic Pd and Mott-insulating CoO2 sheets. To understand the nature of the electronic coupling between the layers that gives rise to the unique properti…
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When a three-dimensional material is constructed by stacking different two-dimensional layers into an ordered structure, new and unique physical properties can emerge. An example is the delafossite PdCoO2, which consists of alternating layers of metallic Pd and Mott-insulating CoO2 sheets. To understand the nature of the electronic coupling between the layers that gives rise to the unique properties of PdCoO2, we revealed its layer-resolved electronic structure combining standing-wave X-ray photoemission spectroscopy and ab initio many-body calculations. Experimentally, we have decomposed the measured valence band spectrum into contributions from Pd and CoO2 layers. Computationally, we find that many-body interactions in Pd and CoO2 layers are highly different. Holes in the CoO2 layer interact strongly with charge-transfer excitons in the same layer, whereas holes in the Pd layer couple to plasmons in the Pd layer. Interestingly, we find that holes in states hybridized across both layers couple to both types of excitations (charge-transfer excitons or plasmons), with the intensity of photoemission satellites being proportional to the projection of the state onto a given layer. This establishes satellites as a sensitive probe for inter-layer hybridization. These findings pave the way towards a better understanding of complex many-electron interactions in layered quantum materials.
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Submitted 6 May, 2021;
originally announced May 2021.
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Unconventional Superconductivity in Magic-Angle Twisted Trilayer Graphene
Authors:
Ammon Fischer,
Zachary A. H. Goodwin,
Arash A. Mostofi,
Johannes Lischner,
Dante M. Kennes,
Lennart Klebl
Abstract:
Magic-angle twisted trilayer graphene (MATTG) recently emerged as a highly tunable platform for studying correlated phases of matter, such as correlated insulators and superconductivity. Superconductivity occurs in a range of doping levels that is bounded by van Hove singularities which stimulates the debate of the origin and nature of superconductivity in this material. In this work, we discuss t…
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Magic-angle twisted trilayer graphene (MATTG) recently emerged as a highly tunable platform for studying correlated phases of matter, such as correlated insulators and superconductivity. Superconductivity occurs in a range of doping levels that is bounded by van Hove singularities which stimulates the debate of the origin and nature of superconductivity in this material. In this work, we discuss the role of spin-fluctuations arising from atomic-scale correlations in MATTG for the superconducting state. We show that in a phase diagram as function of doping ($ν$) and temperature, nematic superconducting regions are surrounded by ferromagnetic states and that a superconducting dome with $T_c \approx 2\,\mathrm{K}$ appears between the integer fillings $ν=-2$ and $ν= -3$. Applying a perpendicular electric field enhances superconductivity on the electron-doped side which we relate to changes in the spin-fluctuation spectrum. We show that the nematic unconventional superconductivity leads to pronounced signatures in the local density of states detectable by scanning tunneling spectroscopy measurements.
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Submitted 14 January, 2022; v1 submitted 20 April, 2021;
originally announced April 2021.
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Core Electron Binding Energies in Solids from Periodic All-Electron $Δ$-Self-Consistent-Field Calculations
Authors:
Juhan Matthias Kahk,
Georg S. Michelitsch,
Reinhard J. Maurer,
Karsten Reuter,
Johannes Lischner
Abstract:
Theoretical calculations of core electron binding energies are important for aiding the interpretation of experimental core level photoelectron spectra. In previous work, the $Δ$-Self-Consistent-Field ($Δ$-SCF) method based on density functional theory has been shown to yield highly accurate 1s and 2p binding energies in free molecules. However, most experimental work is concerned with solids, not…
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Theoretical calculations of core electron binding energies are important for aiding the interpretation of experimental core level photoelectron spectra. In previous work, the $Δ$-Self-Consistent-Field ($Δ$-SCF) method based on density functional theory has been shown to yield highly accurate 1s and 2p binding energies in free molecules. However, most experimental work is concerned with solids, not gases. In this study, we demonstrate the application of the all-electron $Δ$-SCF method to periodic systems. A consideration of the experimentally accessible points of reference leads to the definition of a core electron binding energy in a solid as the difference between the total energies of two $N-1$ electron systems: one with an explicit, localized core hole, and one with an electron removed from the highest occupied state. The calculation of each of these quantities is addressed. In addition, the analogy between a localized core hole and a charged defect in a solid is highlighted, and the extrapolation of calculated core electron binding energies to the infinite supercell limit is discussed. It is found that the extrapolated values of the core electron binding energies from periodic $Δ$-SCF calculations agree well with experimental results for both metallic and insulating systems, with a mean absolute error of 0.24 eV for the 15 core levels considered in this study.
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Submitted 24 August, 2021; v1 submitted 13 April, 2021;
originally announced April 2021.
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Light Induced Charge Transfer from Transition-metal Doped Aluminium Clusters to Carbon Dioxide
Authors:
Alexandra Göbel,
Angel Rubio,
Johannes Lischner
Abstract:
Charge transfer between molecules and catalysts plays a critical role in determining the efficiency and yield of photo-chemical catalytic processes. In this paper, we study light-induced electron transfer between transition metal doped aluminium clusters and CO$_2$ molecules using first-principles time-dependent density-functional theory. Specifically, we carry out calculations for a range of dopa…
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Charge transfer between molecules and catalysts plays a critical role in determining the efficiency and yield of photo-chemical catalytic processes. In this paper, we study light-induced electron transfer between transition metal doped aluminium clusters and CO$_2$ molecules using first-principles time-dependent density-functional theory. Specifically, we carry out calculations for a range of dopants (Zr, Mn, Fe, Ru, Co, Ni and Cu) and find that the resulting systems fall into two categories: Cu- and Fe-doped clusters exhibit no ground state charge transfer, weak CO$_2$ adsorption and light-induced electron transfer into the CO$_2$. In all other systems, we observe ground state electron transfer into the CO$_2$ resulting in strong adsorption and predominantly light-induced electron back-transfer from the CO$_2$ into the cluster. These findings pave the way towards a rational design of atomically precise aluminium photo-catalysts.
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Submitted 26 March, 2021;
originally announced March 2021.
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Flat band properties of twisted transition metal dichalcogenide homo- and heterobilayers of MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$
Authors:
Valerio Vitale,
Kemal Atalar,
Arash A. Mostofi,
Johannes Lischner
Abstract:
Twisted bilayers of two-dimensional materials, such as twisted bilayer graphene, often feature flat electronic bands that enable the observation of electron correlation effects. In this work, we study the electronic structure of twisted transition metal dichalcogenide (TMD) homo- and heterobilayers that are obtained by combining MoS$_2$, WS$_2$, MoSe$_2$ and WSe$_2$ monolayers, and show how flat b…
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Twisted bilayers of two-dimensional materials, such as twisted bilayer graphene, often feature flat electronic bands that enable the observation of electron correlation effects. In this work, we study the electronic structure of twisted transition metal dichalcogenide (TMD) homo- and heterobilayers that are obtained by combining MoS$_2$, WS$_2$, MoSe$_2$ and WSe$_2$ monolayers, and show how flat band properties depend on the chemical composition of the bilayer as well as its twist angle. We determine the relaxed atomic structure of the twisted bilayers using classical force fields and calculate the electronic band structure using a tight-binding model parametrized from first-principles density-functional theory. We find that the highest valence bands in these systems can derive either from $Γ$-point or $K$/$K'$-point states of the constituent monolayers. For homobilayers, the two highest valence bands are composed of monolayer $Γ$-point states, exhibit a graphene-like dispersion and become flat as the twist angle is reduced. The situation is more complicated for heterobilayers where the ordering of $Γ$-derived and $K$/$K'$-derived states depends both on the material composition and also the twist angle. In all systems, qualitatively different band structures are obtained when atomic relaxations are neglected.
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Submitted 17 May, 2021; v1 submitted 5 February, 2021;
originally announced February 2021.
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Optical read-out of Coulomb staircases in a moiré superlattice via trapped interlayer trions
Authors:
Hyeonjun Baek,
Mauro Brotons-Gisbert,
Aidan Campbell,
Valerio Vitale,
Johannes Lischner,
Kenji Watanabe,
Takashi Taniguchi,
Brian D. Gerardot
Abstract:
Moiré patterns with a superlattice potential can be formed by vertically stacking two layered materials with a relative twist or lattice constant mismatch. The moiré superlattice can generate flat bands that result in new correlated insulating, superconducting, and topological states. Strong electron correlations, tunable by the fractional filling, have been observed in both graphene and transitio…
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Moiré patterns with a superlattice potential can be formed by vertically stacking two layered materials with a relative twist or lattice constant mismatch. The moiré superlattice can generate flat bands that result in new correlated insulating, superconducting, and topological states. Strong electron correlations, tunable by the fractional filling, have been observed in both graphene and transition metal dichalcogenide (TMD) based systems. In addition, in TMD based systems, the moiré potential landscape can trap interlayer excitons (IX) at specific atomic registries. Here we report that spatially isolated trapped IX in a molybdenum diselenide/tungsten diselenide heterobilayer device provide a sensitive optical probe of carrier filling in their immediate environment. By mapping the spatial positions of individual trapped IX, we are able to spectrally track the emitters as the moiré lattice is filled with excess carriers. Upon initial doping of the heterobilayer, neutral trapped IX form charged IX (IX trions) uniformly with a binding energy of ~7 meV. Upon further doping, the empty superlattice sites sequentially fill, creating a Coulomb staircase: stepwise changes in the IX trion emission energy due to Coulomb interactions with carriers at nearest neighbour moiré sites. This non-invasive, highly local technique can complement transport and non-local optical sensing techniques to characterise Coulomb interaction energies, visualise charge correlated states, or probe local disorder in a moiré superlattice.
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Submitted 29 July, 2021; v1 submitted 2 February, 2021;
originally announced February 2021.
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Predicting polarizabilities of silicon clusters using local chemical environments
Authors:
Mario G. Zauchner,
Stefano Dal Forno,
Gábor Cśanyi,
Andrew Horsfield,
Johannes Lischner
Abstract:
Calculating polarizabilities of large clusters with first-principles techniques is challenging because of the unfavorable scaling of computational cost with cluster size. To address this challenge, we demonstrate that polarizabilities of large hydrogenated silicon clusters containing thousands of atoms can be efficiently calculated with machine learning methods. Specifically, we construct machine…
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Calculating polarizabilities of large clusters with first-principles techniques is challenging because of the unfavorable scaling of computational cost with cluster size. To address this challenge, we demonstrate that polarizabilities of large hydrogenated silicon clusters containing thousands of atoms can be efficiently calculated with machine learning methods. Specifically, we construct machine learning models based on the smooth overlap of atomic positions (SOAP) descriptor and train the models using a database of calculated random-phase approximation polarizabilities for clusters containing up to 110 silicon atoms. We first demonstrate the ability of the machine learning models to fit the data and then assess their ability to predict cluster polarizabilities using k-fold cross validation. Finally, we study the machine learning predictions for clusters that are too large for explicit first-principles calculations and find that they accurately describe the dependence of the polarizabilities on the ratio of hydrogen to silicon atoms and also predict a bulk limit that is in good agreement with previous studies.
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Submitted 25 August, 2021; v1 submitted 11 January, 2021;
originally announced January 2021.
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Importance of long-ranged electron-electron interactions for the magnetic phase diagram of twisted bilayer graphene
Authors:
Lennart Klebl,
Zachary A. H. Goodwin,
Arash A. Mostofi,
Dante M. Kennes,
Johannes Lischner
Abstract:
Electron-electron interactions are intrinsically long ranged, but many models of strongly interacting electrons only take short-ranged interactions into account. Here, we present results of atomistic calculations including both long-ranged and short-ranged electron-electron interactions for the magnetic phase diagram of twisted bilayer graphene and demonstrate that qualitatively different results…
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Electron-electron interactions are intrinsically long ranged, but many models of strongly interacting electrons only take short-ranged interactions into account. Here, we present results of atomistic calculations including both long-ranged and short-ranged electron-electron interactions for the magnetic phase diagram of twisted bilayer graphene and demonstrate that qualitatively different results are obtained when long-ranged interactions are neglected. In particular, we use Hartree theory augmented with Hubbard interactions and calculate the interacting spin susceptibility at a range of doping levels and twist angles near the magic angle to identify the dominant magnetic instabilities. At the magic angle, mostly anti-ferromagnetic order is found, while ferromagnetism dominates at other twist angles. Moreover, long-ranged interactions significantly increase the twist angle window in which strong correlation phenomena can be expected. These findings are in good agreement with available experimental data.
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Submitted 28 April, 2021; v1 submitted 28 December, 2020;
originally announced December 2020.
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Effect of bilayer stacking on the atomic and electronic structure of twisted double bilayer graphene
Authors:
Xia Liang,
Zachary A. H. Goodwin,
Valerio Vitale,
Fabiano Corsetti,
Arash A. Mostofi,
Johannes Lischner
Abstract:
Twisted double bilayer graphene has recently emerged as an interesting moiré material that exhibits strong correlation phenomena that are tunable by an applied electric field. Here we study the atomic and electronic properties of three different graphene double bilayers: double bilayers composed of two AB stacked bilayers (AB/AB), double bilayers composed of two AA stacked bilayers (AA/AA) as well…
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Twisted double bilayer graphene has recently emerged as an interesting moiré material that exhibits strong correlation phenomena that are tunable by an applied electric field. Here we study the atomic and electronic properties of three different graphene double bilayers: double bilayers composed of two AB stacked bilayers (AB/AB), double bilayers composed of two AA stacked bilayers (AA/AA) as well as heterosystems composed of one AB and one AA bilayer (AB/AA). The atomic structure is determined using classical force fields. We find that the inner layers of the double bilayer exhibit significant in-plane and out-of-plane relaxations, similar to twisted bilayer graphene. The relaxations of the outer layers depend on the stacking: atoms in AB bilayers follow the relaxations of the inner layers, while atoms in AA bilayers attempt to avoid higher-energy AA stacking. For the relaxed structures, we calculate the electronic band structures using the tight-binding method. All double bilayers exhibit flat bands at small twist angles, but the shape of the bands depends sensitively on the stacking of the outer layers. To gain further insight, we study the evolution of the band structure as the outer layers are rigidly moved away from the inner layers, while preserving their atomic relaxations. This reveals that the hybridization with the outer layers results in an additional flattening of the inner-layer flat band manifold. Our results establish AA/AA and AB/AA twisted double bilayers as interesting moiré materials with different flat band physics compared to the widely studied AB/AB system.
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Submitted 26 October, 2020; v1 submitted 12 August, 2020;
originally announced August 2020.
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Frontier Orbitals and Quasiparticle Energy Levels in Ionic Liquids
Authors:
J. Matthias Kahk,
Ivar Kuusik,
Vambola Kisand,
Kevin R. J. Lovelock,
Johannes Lischner
Abstract:
Room temperature ionic liquids play an important role in many technological applications and a detailed understanding of their frontier molecular orbitals is required to optimize interfacial barriers, reactivity and stability with respect to electron injection and removal. In this work, we calculate quasiparticle energy levels of ionic liquids using first-principles many-body perturbation theory w…
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Room temperature ionic liquids play an important role in many technological applications and a detailed understanding of their frontier molecular orbitals is required to optimize interfacial barriers, reactivity and stability with respect to electron injection and removal. In this work, we calculate quasiparticle energy levels of ionic liquids using first-principles many-body perturbation theory within the GW approximation and compare our results to various mean-field approaches, including semilocal and hybrid density-functional theory and Hartree-Fock. We find that the mean-field results depend qualitatively and quantitatively on the treatment of exchange-correlation effects, while GW calculations produce results that are in excellent agreement with experimental photoelectron spectra of gas phase ion pairs and ionic liquids. These results establish the GW approach as a valuable tool for understanding the electronic structures of ionic liquids.
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Submitted 30 June, 2020;
originally announced June 2020.
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Dielectric engineering of hot carrier generation by quantized plasmons in embedded silver nanoparticles
Authors:
Lara Román Castellanos,
Ortwin Hess,
Johannes Lischner
Abstract:
Understanding and controlling properties of plasmon-induced hot carriers is a key step towards next-generation photovoltaic and photocatalytic devices. Here, we uncover a route to engineering hot-carrier generation rates of silver nanoparticles by designed embedding in dielectric host materials. Extending our recently established quantum-mechanical approach to describe the decay of quantized plasm…
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Understanding and controlling properties of plasmon-induced hot carriers is a key step towards next-generation photovoltaic and photocatalytic devices. Here, we uncover a route to engineering hot-carrier generation rates of silver nanoparticles by designed embedding in dielectric host materials. Extending our recently established quantum-mechanical approach to describe the decay of quantized plasmons into hot carriers we capture both external screening by the nanoparticle environment and internal screening by silver d-electrons through an effective electron-electron interaction. We find that hot-carrier generation can be maximized by engineering the dielectric host material such that the energy of the localized surface plasmon coincides with the highest value of the nanoparticle joint density of states. This allows us to uncover a path to control the energy of the carriers and the amount produced, for example a large number of relatively low-energy carriers are obtained by embedding in strongly screening environments.
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Submitted 24 January, 2021; v1 submitted 21 May, 2020;
originally announced May 2020.
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Hartree theory calculations of quasiparticle properties in twisted bilayer graphene
Authors:
Zachary A. H. Goodwin,
Valerio Vitale,
Xia Liang,
Arash A. Mostofi,
Johannes Lischner
Abstract:
A detailed understanding of interacting electrons in twisted bilayer graphene (tBLG) near the magic angle is required to gain insights into the physical origin of the observed broken symmetry phases. Here, we present extensive atomistic Hartree theory calculations of the electronic properties of tBLG in the (semi-)metallic phase as function of doping and twist angle. Specifically, we calculate qua…
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A detailed understanding of interacting electrons in twisted bilayer graphene (tBLG) near the magic angle is required to gain insights into the physical origin of the observed broken symmetry phases. Here, we present extensive atomistic Hartree theory calculations of the electronic properties of tBLG in the (semi-)metallic phase as function of doping and twist angle. Specifically, we calculate quasiparticle properties, such as the band structure, density of states (DOS) and local density of states (LDOS), which are directly accessible in photoemission and tunnelling spectroscopy experiments. We find that quasiparticle properties change significantly upon doping - an effect which is not captured by tight-binding theory. In particular, we observe that the partially occupied bands flatten significantly which enhances the density of states at the Fermi level. We predict a clear signature of this band flattening in the LDOS in the AB/BA regions of tBLG which can be tested in scanning tunneling experiments. We also study the dependence of quasiparticle properties on the dielectric environment of tBLG and discover that these properties are surprisingly robust as a consequence of the strong internal screening. Finally, we present a simple analytical expression for the Hartree potential which enables the determination of quasiparticle properties without the need for self-consistent calculations.
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Submitted 1 July, 2020; v1 submitted 30 April, 2020;
originally announced April 2020.
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Effects of nitridation on SiC/SiO$_2$ structures studied by hard X-ray photoelectron spectroscopy
Authors:
Judith Berens,
Sebastian Bichelmaier,
Nathalie K. Fernando,
Pardeep K. Thakur,
Tien-Lin Lee,
Manfred Mascheck,
Tomas Wiell,
Susanna K. Eriksson,
J. Matthias Kahk,
Johannes Lischner,
Manesh V. Mistry,
Thomas Aichinger,
Gregor Pobegen,
Anna Regoutz
Abstract:
SiC is set to enable a new era in power electronics impacting a wide range of energy technologies, from electric vehicles to renewable energy. Its physical characteristics outperform silicon in many aspects, including band gap, breakdown field, and thermal conductivity. The main challenge for further development of SiC-based power semiconductor devices is the quality of the interface between SiC a…
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SiC is set to enable a new era in power electronics impacting a wide range of energy technologies, from electric vehicles to renewable energy. Its physical characteristics outperform silicon in many aspects, including band gap, breakdown field, and thermal conductivity. The main challenge for further development of SiC-based power semiconductor devices is the quality of the interface between SiC and its native dielectric SiO$_2$. High temperature nitridation processes can improve the interface quality and ultimately the device performance immensely, but the underlying chemical processes are still poorly understood. Here, we present an energy-dependent hard X-ray photoelectron spectroscopy (HAXPES) study probing non-destructively SiC and SiO$_2$ and their interface in device stacks treated in varying atmospheres. We successfully combine laboratory- and synchrotron-based HAXPES to provide unique insights into the chemistry of interface defects and their passivation through nitridation processes.
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Submitted 21 April, 2020; v1 submitted 13 December, 2019;
originally announced December 2019.
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Generation of plasmonic hot carriers from d-bands in metallic nanoparticles
Authors:
Lara Román Castellanos,
Juhan Matthias Kahk,
Ortwin Hess,
Johannes Lischner
Abstract:
We present an approach to master the well-known challenge of calculating the contribution of d-bands to plasmon-induced hot carrier rates in metallic nanoparticles. We generalise the widely used spherical well model for the nanoparticle wavefunctions to flat d-bands using the envelope function technique. Using Fermi's golden rule, we calculate the generation rates of hot carriers after the decay o…
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We present an approach to master the well-known challenge of calculating the contribution of d-bands to plasmon-induced hot carrier rates in metallic nanoparticles. We generalise the widely used spherical well model for the nanoparticle wavefunctions to flat d-bands using the envelope function technique. Using Fermi's golden rule, we calculate the generation rates of hot carriers after the decay of the plasmon due to transitions from either a d-band state to an sp-band state or from an sp-band state to another sp-band state. We apply this formalism to spherical silver nanoparticles with radii up to 20~nm and also study the dependence of hot carrier rates on the energy of the d-bands. We find that for nanoparticles with a radius less than 2.5~nm sp-band state to sp-band state transitions dominate hot carrier production while d-band state to sp-band state transitions give the largest contribution for larger nanoparticles.
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Submitted 13 February, 2020; v1 submitted 1 December, 2019;
originally announced December 2019.
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Untying the insulating and superconducting orders in magic-angle graphene
Authors:
Petr Stepanov,
Ipsita Das,
Xiaobo Lu,
Ali Fahimniya,
Kenji Watanabe,
Takashi Taniguchi,
Frank H. L. Koppens,
Johannes Lischner,
Leonid Levitov,
Dmitri K. Efetov
Abstract:
The coexistence of superconducting and correlated insulating states in magic-angle twisted bilayer graphene prompts fascinating questions about the relationship of these orders. Independent control of the microscopic mechanisms governing these phases could help uncover their individual roles and shed light on their intricate interplay. Here we report on direct tuning of electronic interactions in…
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The coexistence of superconducting and correlated insulating states in magic-angle twisted bilayer graphene prompts fascinating questions about the relationship of these orders. Independent control of the microscopic mechanisms governing these phases could help uncover their individual roles and shed light on their intricate interplay. Here we report on direct tuning of electronic interactions in this system by changing its separation from a metallic screening layer. We observe quenching of correlated insula-tors in devices with screening layer separations that are smaller than a typical Wannier orbital size of 15nm, and with the twist angles slightly deviating from the magic value 1.10 plus(minus) 0.05 degrees. Upon extinction of the insulating orders, the vacated phase space is taken over by superconducting domes that feature critical temperatures comparable to those in the devices with strong insulators. In addition, we find that insulators at half-filling can reappear in small out-of-plane magnetic fields of 0.4 T, giving rise to quantized Hall states with a Chern number of 2. Our study suggests reexamination of the often-assumed mother-child relation between the insulating and superconducting phases in moire graphene, and illustrates a new approach to directly probe microscopic mechanisms of superconductivity in strongly-correlated systems.
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Submitted 24 December, 2020; v1 submitted 20 November, 2019;
originally announced November 2019.
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Critical role of device geometry for the phase diagram of twisted bilayer graphene
Authors:
Zachary A. H. Goodwin,
Valerio Vitale,
Fabiano Corsetti,
Dmitri K. Efetov,
Arash A. Mostofi,
Johannes Lischner
Abstract:
The effective interaction between electrons in two-dimensional materials can be modified by their environment, enabling control of electronic correlations and phases. Here, we study the dependence of electronic correlations in twisted bilayer graphene (tBLG) on the separation to the metallic gate(s) in two device configurations. Using an atomistic tight-binding model, we determine the Hubbard para…
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The effective interaction between electrons in two-dimensional materials can be modified by their environment, enabling control of electronic correlations and phases. Here, we study the dependence of electronic correlations in twisted bilayer graphene (tBLG) on the separation to the metallic gate(s) in two device configurations. Using an atomistic tight-binding model, we determine the Hubbard parameters of the flat bands as a function of gate separation, taking into account the screening from the metallic gate(s), the dielectric spacer layers and the tBLG itself. We determine the critical gate separation at which the Hubbard parameters become smaller than the critical value required for a transition from a correlated insulator state to a (semi-)metallic phase. We show how this critical gate separation depends on twist angle, doping and the device configuration. These calculations may help rationalise the reported differences between recent measurements of tBLG's phase diagram and suggests that correlated insulator states can be screened out in devices with thin dielectric layers.
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Submitted 22 November, 2019; v1 submitted 19 November, 2019;
originally announced November 2019.
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Resonant and Bound States of Charged Defects in Two-Dimensional Semiconductors
Authors:
Martik Aghajanian,
Bruno Schuler,
Katherine A. Cochrane,
Jun-Ho Lee,
Christoph Kastl,
Jeffrey B. Neaton,
Alexander Weber-Bargioni,
Arash A. Mostofi,
Johannes Lischner
Abstract:
A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS$_2$ using a combination of scanning tunnelling spectroscopy and large-scale atomistic electronic structure calculations. We observe several localized defect states of hydrogenic wave functi…
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A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS$_2$ using a combination of scanning tunnelling spectroscopy and large-scale atomistic electronic structure calculations. We observe several localized defect states of hydrogenic wave function character in the vicinity of the valence band edge. Some of these defect states are bound, while others are resonant. The resonant states result from the multi-valley valence band structure of WS$_2$, whereby localized states originating from the secondary valence band maximum at $Γ$ hybridize with continuum states from the primary valence band maximum at K/K$^{\prime}$. Resonant states have important consequences for electron transport as they can trap mobile carriers for several tens of picoseconds.
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Submitted 5 September, 2019;
originally announced September 2019.