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Stable room-temperature multiferroic skyrmions in lithium niobate with enhanced Pockels effect
Authors:
Yalong Yu,
Bo Xiong,
Siqi Wu,
Yekai Ren,
Nuo Chen,
Qingjiao Mi,
Kangping Lou,
Rui Wang,
Tao Chu
Abstract:
Lithium Niobate (LN) is a ferroelectric material with exceptional electrical characteristics, including high piezoelectricity, high Pockels effect, etc. These properties make it a promising platform for numerous fields such as high-speed communication, optical computation, and quantum information processing. Besides these, the introduction of magnetic structures to LN holds significant potential t…
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Lithium Niobate (LN) is a ferroelectric material with exceptional electrical characteristics, including high piezoelectricity, high Pockels effect, etc. These properties make it a promising platform for numerous fields such as high-speed communication, optical computation, and quantum information processing. Besides these, the introduction of magnetic structures to LN holds significant potential to achieve magnetoelectric coupling, which can be applied in magnetic memory and data-processing devices with high efficiency. Here, for the first time, we observe a special topological magnetic structure called magnetic skyrmion in LN (SK-LN) by the combination of magnetic field annealing and rapid annealing processes . Compared to the magnetic skyrmions reported in magnetic systems, SK-LN exhibit exceptionally high stability. Additionally, the center of the magnetic vortex exhibits spontaneous ferroelectric polarization, indicating its multiferroic characteristic. With the excitation of these multiferroic skyrmions, the modulation efficiency of the electro-optical (EO) modulator fabricated on thin film lithium niobate on insulator (LNOI) wafer was found to be enhanced from 1.98 V*cm to 0.63 V*cm. It is considered that the multiferroic skyrmions significantly enhance the Pockels coefficient of LN to 101 pm/V, nearly three times the result (32pm/V) reported previously.
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Submitted 7 July, 2024;
originally announced July 2024.
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Mott insulating phase and coherent-incoherent crossover across magnetic phase transition in 2D antiferromagnetic CrSBr
Authors:
Fan Wu,
Xuefeng Zhang,
Yi Chen,
Ding Pei,
Mengwen Zhan,
Zicheng Tao,
Cheng Chen,
Shipeng Lu,
Jingzhi Chen,
Shujie Tang,
Xia Wang,
Yanfeng Guo,
Lexian Yang,
Yan Zhang,
Yulin Chen,
Qixi Mi,
Gang Li,
Zhongkai Liu
Abstract:
In two-dimensional van der Waals magnetic materials, the interplay between magnetism and electron correlation can give rise to new ground states and lead to novel transport and optical properties. A fundamental question in these materials is how the electron correlation manifests and interacts with the magnetic orders. In this study, we demonstrate that the recently discovered 2D antiferromagnetic…
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In two-dimensional van der Waals magnetic materials, the interplay between magnetism and electron correlation can give rise to new ground states and lead to novel transport and optical properties. A fundamental question in these materials is how the electron correlation manifests and interacts with the magnetic orders. In this study, we demonstrate that the recently discovered 2D antiferromagnetic material, CrSBr, is a Mott insulator, through the combined use of resonant and temperature-dependent angle-resolved photoemission spectroscopy techiniques, supplemented by dynamical mean-field theory analysis. Intriguingly, we found that as the system transitions from the antiferromagnetic to the paramagnetic phases, its Mott bands undergo a reconfiguration, and a coherent-incoherent crossover, driven by the dissolution of the magnetic order. Our findings reveal a distinctive evolution of band structure associated with magnetic phase transitions, shedding light on the investigation of intricate interplay between correlation and magnetic orders in strongly correlated van der Waals magnetic materials.
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Submitted 30 May, 2024;
originally announced May 2024.
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Learning Macroeconomic Policies based on Microfoundations: A Dynamic Stackelberg Mean Field Game Approach
Authors:
Qirui Mi,
Zhiyu Zhao,
Siyu Xia,
Yan Song,
Jun Wang,
Haifeng Zhang
Abstract:
The Lucas critique emphasizes the importance of considering the impact of policy changes on the expectations of micro-level agents in macroeconomic policymaking. However, the inherently self-interested nature of large-scale micro-agents, who pursue long-term benefits, complicates the formulation of optimal macroeconomic policies. This paper proposes a novel general framework named Dynamic Stackelb…
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The Lucas critique emphasizes the importance of considering the impact of policy changes on the expectations of micro-level agents in macroeconomic policymaking. However, the inherently self-interested nature of large-scale micro-agents, who pursue long-term benefits, complicates the formulation of optimal macroeconomic policies. This paper proposes a novel general framework named Dynamic Stackelberg Mean Field Games (Dynamic SMFG) to model such policymaking within sequential decision-making processes, with the government as the leader and households as dynamic followers. Dynamic SMFGs capture the dynamic interactions among large-scale households and their response to macroeconomic policy changes. To solve dynamic SMFGs, we propose the Stackelberg Mean Field Reinforcement Learning (SMFRL) algorithm, which leverages the population distribution of followers to represent high-dimensional joint state and action spaces. In experiments, our method surpasses macroeconomic policies in the real world, existing AI-based and economic methods. It allows the leader to approach the social optimum with the highest performance, while large-scale followers converge toward their best response to the leader's policy. Besides, we demonstrate that our approach retains effectiveness even when some households do not adopt the SMFG policy. In summary, this paper contributes to the field of AI for economics by offering an effective tool for modeling and solving macroeconomic policy-making issues.
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Submitted 13 June, 2024; v1 submitted 14 March, 2024;
originally announced March 2024.
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Precise and Fast LIDAR via Electrical Asynchronous Sampling Based on a Single Femtosecond Laser
Authors:
Lizong Dong,
Qinggai Mi,
Siyu Zhou,
Guanhao Wu
Abstract:
LiDAR, using a laser-based ranging method for precise environmental 3D sensing, has numerous scientific and industrial applications. However, the challenge lies in simultaneously enhancing precision and update rate, hinders its application in more unexpected scenarios. To this end, an optical frequency comb with a stable repetition frequency and femtosecond pulse width was used as an advanced lase…
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LiDAR, using a laser-based ranging method for precise environmental 3D sensing, has numerous scientific and industrial applications. However, the challenge lies in simultaneously enhancing precision and update rate, hinders its application in more unexpected scenarios. To this end, an optical frequency comb with a stable repetition frequency and femtosecond pulse width was used as an advanced laser source. The LiDAR performance significantly improved in the micrometer and megahertz regimes using an asynchronous sampling ranging method of electrical pulses based on a single femtosecond laser. This overcame the limitation of traditional optical sampling approaches, achieving a 38.8 $μ$m Allan deviation at an update rate of 1 MHz and 8.06 $μ$m after 2 ms time-averaging. The proposed method used a single laser for fast metrology monitoring, 1 megapixel/s 3D imaging at the meter-level non-ambiguous range and contactless vital sign detection at the hundred-micrometer scale.
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Submitted 13 February, 2024;
originally announced February 2024.
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Large Language Models Play StarCraft II: Benchmarks and A Chain of Summarization Approach
Authors:
Weiyu Ma,
Qirui Mi,
Yongcheng Zeng,
Xue Yan,
Yuqiao Wu,
Runji Lin,
Haifeng Zhang,
Jun Wang
Abstract:
StarCraft II is a challenging benchmark for AI agents due to the necessity of both precise micro level operations and strategic macro awareness. Previous works, such as Alphastar and SCC, achieve impressive performance on tackling StarCraft II , however, still exhibit deficiencies in long term strategic planning and strategy interpretability. Emerging large language model (LLM) agents, such as Voy…
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StarCraft II is a challenging benchmark for AI agents due to the necessity of both precise micro level operations and strategic macro awareness. Previous works, such as Alphastar and SCC, achieve impressive performance on tackling StarCraft II , however, still exhibit deficiencies in long term strategic planning and strategy interpretability. Emerging large language model (LLM) agents, such as Voyage and MetaGPT, presents the immense potential in solving intricate tasks. Motivated by this, we aim to validate the capabilities of LLMs on StarCraft II, a highly complex RTS game.To conveniently take full advantage of LLMs` reasoning abilities, we first develop textual StratCraft II environment, called TextStarCraft II, which LLM agent can interact. Secondly, we propose a Chain of Summarization method, including single frame summarization for processing raw observations and multi frame summarization for analyzing game information, providing command recommendations, and generating strategic decisions. Our experiment consists of two parts: first, an evaluation by human experts, which includes assessing the LLMs`s mastery of StarCraft II knowledge and the performance of LLM agents in the game; second, the in game performance of LLM agents, encompassing aspects like win rate and the impact of Chain of Summarization.Experiment results demonstrate that: 1. LLMs possess the relevant knowledge and complex planning abilities needed to address StarCraft II scenarios; 2. Human experts consider the performance of LLM agents to be close to that of an average player who has played StarCraft II for eight years; 3. LLM agents are capable of defeating the built in AI at the Harder(Lv5) difficulty level. We have open sourced the code and released demo videos of LLM agent playing StarCraft II.
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Submitted 17 June, 2024; v1 submitted 19 December, 2023;
originally announced December 2023.
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TaxAI: A Dynamic Economic Simulator and Benchmark for Multi-Agent Reinforcement Learning
Authors:
Qirui Mi,
Siyu Xia,
Yan Song,
Haifeng Zhang,
Shenghao Zhu,
Jun Wang
Abstract:
Taxation and government spending are crucial tools for governments to promote economic growth and maintain social equity. However, the difficulty in accurately predicting the dynamic strategies of diverse self-interested households presents a challenge for governments to implement effective tax policies. Given its proficiency in modeling other agents in partially observable environments and adapti…
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Taxation and government spending are crucial tools for governments to promote economic growth and maintain social equity. However, the difficulty in accurately predicting the dynamic strategies of diverse self-interested households presents a challenge for governments to implement effective tax policies. Given its proficiency in modeling other agents in partially observable environments and adaptively learning to find optimal policies, Multi-Agent Reinforcement Learning (MARL) is highly suitable for solving dynamic games between the government and numerous households. Although MARL shows more potential than traditional methods such as the genetic algorithm and dynamic programming, there is a lack of large-scale multi-agent reinforcement learning economic simulators. Therefore, we propose a MARL environment, named \textbf{TaxAI}, for dynamic games involving $N$ households, government, firms, and financial intermediaries based on the Bewley-Aiyagari economic model. Our study benchmarks 2 traditional economic methods with 7 MARL methods on TaxAI, demonstrating the effectiveness and superiority of MARL algorithms. Moreover, TaxAI's scalability in simulating dynamic interactions between the government and 10,000 households, coupled with real-data calibration, grants it a substantial improvement in scale and reality over existing simulators. Therefore, TaxAI is the most realistic economic simulator for optimal tax policy, which aims to generate feasible recommendations for governments and individuals.
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Submitted 14 March, 2024; v1 submitted 28 September, 2023;
originally announced September 2023.
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Joint Caching and Transmission in the Mobile Edge Network: A Multi-Agent Learning Approach
Authors:
Qirui Mi,
Ning Yang,
Haifeng Zhang,
Haijun Zhang,
Jun Wang
Abstract:
Joint caching and transmission optimization problem is challenging due to the deep coupling between decisions. This paper proposes an iterative distributed multi-agent learning approach to jointly optimize caching and transmission. The goal of this approach is to minimize the total transmission delay of all users. In this iterative approach, each iteration includes caching optimization and transmi…
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Joint caching and transmission optimization problem is challenging due to the deep coupling between decisions. This paper proposes an iterative distributed multi-agent learning approach to jointly optimize caching and transmission. The goal of this approach is to minimize the total transmission delay of all users. In this iterative approach, each iteration includes caching optimization and transmission optimization. A multi-agent reinforcement learning (MARL)-based caching network is developed to cache popular tasks, such as answering which files to evict from the cache and which files to storage. Based on the cached files of the caching network, the transmission network transmits cached files for users by single transmission (ST) or joint transmission (JT) with multi-agent Bayesian learning automaton (MABLA) method. And then users access the edge servers with the minimum transmission delay. The experimental results demonstrate the performance of the proposed multi-agent learning approach.
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Submitted 9 September, 2022;
originally announced September 2022.
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Observation of non-trivial topological electronic structure of orthorhombic SnSe
Authors:
H. J. Zheng,
W. J. Shi,
C. W. Wang,
Y. Y. Lv,
W. Xia,
B. H. Li,
F. Wu,
S. M. He,
K. Huang,
S. T. Cui,
C. Chen,
H. F. Yang,
A. J. Liang,
M. X. Wang,
Z. Sun,
S. H. Yao,
Y. B. Chen,
Y. F. Guo,
Q. X. Mi,
L. X. Yang,
M. S. Bahramy,
Z. K. Liu,
Y. L. Chen
Abstract:
Topological electronic structures are key to the topological classification of quantum materials and play an important role in their physical properties and applications. Recently, SnSe has attracted great research interests due to its superior thermoelectric performance. However, it's topological nature has long been ignored. In this work, by combining synchrotron-based angle-resolved photoemissi…
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Topological electronic structures are key to the topological classification of quantum materials and play an important role in their physical properties and applications. Recently, SnSe has attracted great research interests due to its superior thermoelectric performance. However, it's topological nature has long been ignored. In this work, by combining synchrotron-based angle-resolved photoemission spectroscopy and ab-initio calculations, we systematically investigated the topological electronic structure of orthorhombic SnSe. By identifying the continuous gap in the valence bands due to the band inversion and the topological surface states on its (001) surface, we establish SnSe as a strong topological insulator. Furthermore, we studied the evolution of the topological electronic structure and propose the topological phase diagram in SnSe1-xTex. Our work reveals the topological non-trivial nature of SnSe and provides new understandings of its intriguing transport properties.
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Submitted 14 April, 2022;
originally announced April 2022.
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Photoemission Study of the Electronic Structure of Valence Band Convergent SnSe
Authors:
C. W. Wang,
Y. Y. Y. Xia,
Z. Tian,
J. Jiang,
B. H. Li,
S. T. Cui,
H. F. Yang,
A. J. Liang,
X. Y. Zhan,
G. H. Hong,
S. Liu,
C. Chen,
M. X. Wang,
L. X. Yang,
Z. Liu,
Q. X. Mi,
G. Li,
J. M. Xue,
Z. K. Liu,
Y. L. Chen
Abstract:
IV-VI semiconductor SnSe has been known as the material with record high thermoelectric performance.The multiple close-to-degenerate valence bands in the electronic band structure has been one of the key factors contributing to the high power factor and thus figure of merit in the SnSe single crystal. To date, there have been primarily theoretical calculations of this particular electronic band st…
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IV-VI semiconductor SnSe has been known as the material with record high thermoelectric performance.The multiple close-to-degenerate valence bands in the electronic band structure has been one of the key factors contributing to the high power factor and thus figure of merit in the SnSe single crystal. To date, there have been primarily theoretical calculations of this particular electronic band structure. In this paper, however, using angle-resolved photoemission spectroscopy, we perform a systematic investigation of the electronic structure of SnSe. We directly observe three predicted hole bands with small energy differences between their band tops and relatively small in-plane effective masses, in good agreement with the ab initio calculations and critical for the enhancement of the Seebeck coefficient while keeping high electrical conductivity. Our results reveal the complete band structure of SnSe and help to provide a deeper understanding of the electronic origin of the excellent thermoelectric performances in SnSe.
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Submitted 12 April, 2018;
originally announced April 2018.
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Field-effect transistors of high-mobility few-layer SnSe$_{2}$
Authors:
Chenglei Guo,
Zhen Tian,
Yanjun Xiao,
Qixi Mi,
Jiamin Xue
Abstract:
We report the transport properties of mechanically exfoliated few-layer SnSe$_{2}$ flakes, whose mobility is found with four probe measurements to be ~ 85 cm$^{2}$V$^{-1}$s$^{-1}$ at 300 K, higher than those of the majority of few-layer transitional metal dichalcogenides (TMDs). The mobility increases strongly with decreased temperature, indicating a phonon limited transport. The conductivity of t…
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We report the transport properties of mechanically exfoliated few-layer SnSe$_{2}$ flakes, whose mobility is found with four probe measurements to be ~ 85 cm$^{2}$V$^{-1}$s$^{-1}$ at 300 K, higher than those of the majority of few-layer transitional metal dichalcogenides (TMDs). The mobility increases strongly with decreased temperature, indicating a phonon limited transport. The conductivity of the semiconducting SnSe$_{2}$ shows a metallic behavior, which is explained by two competing factors involving the different temperature dependence of mobility and carrier density. The Fermi level is found to be 87 meV below the conduction band minima (CBM) at 300 K and 12 meV below the CBM at 78 K, resulting from a heavy n-type doping. Previous studies have found SnSe$_{2}$ field-effect transistors (FETs) to be very difficult to turn off. We find the limiting factor to be the flake thickness compared with the maximum depletion width. With fully depleted devices, we are able to achieve a current on-off ratio of ~10$^{5}$. These results demonstrate the great potential of SnSe2 as a two dimensional (2D) semiconducting material and are helpful for our understanding of other heavily doped 2D materials.
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Submitted 13 September, 2016;
originally announced September 2016.