Showing 1–8 of 8 results for author: Musavigharavi, P

Periodically Poled Aluminum Scandium Nitride Bulk Acoustic Wave Resonators and Filters for Communications in the 6G Era

Authors: Izhar, M. M. A. Fiagbenu, S. Yao, X. Du, P. Musavigharavi, Y. Deng, J. Leathersich, C. Moe, A. Kochhar, E. A. Stach, R. Vetury, R. H. Olsson III

Abstract: Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequency bands (>8 GHz) are expected to require resonators with high-quality factor (Q) and electromechanical coupling (k_t^2) to form filters with low insertion loss and high selectivity. However, both the Q and k_t^2 of re… ▽ More Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequency bands (>8 GHz) are expected to require resonators with high-quality factor (Q) and electromechanical coupling (k_t^2) to form filters with low insertion loss and high selectivity. However, both the Q and k_t^2 of resonator devices formed in traditional uniform polarization piezoelectric films of aluminum nitride (AlN) and aluminum scandium nitride (AlScN) decrease when scaled beyond 8 GHz. In this work, we utilized 4-layer AlScN periodically poled piezoelectric films (P3F) to construct high frequency (~17-18 GHz) resonators and filters. The resonator performance is studied over a range of device geometries, with the best resonator achieving a k_t^2 of 11.8% and a Q_p of 236.6 at the parallel resonance frequency (fp) of 17.9 GHz. These resulting figures of merit are ((FoM)_1=(k_t^2 Q)_p and (FoM_2=f_p(FoM)_1x10^-9) ) 27.9 and 500 respectively. These and the k_t^2 are significantly higher than previously reported An/AlScN-based resonators operating at similar frequencies. Fabricated 3-element and 6-element filters formed from these resonators demonstrated low insertion losses (IL) of 1.86 dB and 3.25 dB, and -3 dB bandwidths (BW) of 680 MHz (fractional BW of 3.9%) and 590 MHz (fractional BW of 3.3%) at ~17.4 GHz center frequency. The 3-element and 6-element filters achieved excellent linearity with in-band input third-order intercept point (IIP3) values of +36 dBm and +40 dBm, respectively, which are significantly higher than previously reported acoustic filters operating at similar frequencies. △ Less

Submitted 24 May, 2024; originally announced June 2024.

Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes

Authors: Kwan-Ho Kim, Zirun Han, Yinuo Zhang, Pariasadat Musavigharavi, Jeffrey Zheng, Dhiren K. Pradhan, Eric A. Stach, Roy H. Olsson III, Deep Jariwala

Abstract: The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates non-volatile memory (NVM) devices in a 3D stack, is gaining attention, with CMOS back-end-of-line (BEOL) compatible ferroelectric (FE) diodes being ideal due to their two-terminal design and inherent… ▽ More The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates non-volatile memory (NVM) devices in a 3D stack, is gaining attention, with CMOS back-end-of-line (BEOL) compatible ferroelectric (FE) diodes being ideal due to their two-terminal design and inherently selector-free nature, facilitating high-density crossbar arrays. Here, we demonstrate BEOL-compatible, high-performance FE-diodes scaled to 5, 10, and 20 nm FE Al0.72Sc0.28N/Al0.64Sc0.36N films. Through interlayer (IL) engineering, we show substantial improvements in the ON/OFF ratios (>166 times) and rectification ratios (>176 times) in these scaled devices. The superlative characteristics also enables 5-bit multi-state operation with a stable retention. We also experimentally and theoretically demonstrate the counterintuitive result that the inclusion of an IL can lead to a decrease in the ferroelectric switching voltage of the device. An in-depth analysis into the device transport mechanisms is performed, and our compact model aligns seamlessly with the experimental results. Our results suggest the possibility of using scaled AlxSc1-xN FE-diodes for high performance, low-power, embedded NVM. △ Less

Submitted 18 March, 2024; originally announced March 2024.

Non-Volatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures

Authors: Simrjit Singh, Kwan-Ho Kim, Kiyoung Jo, Pariasadat Musavigharavi, Bumho Kim, Jeffrey Zheng, Nicholas Trainor, Chen Chen, Joan M. Redwing, Eric A Stach, Roy H Olsson III, Deep Jariwala

Abstract: Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D materials with ferroelectrics is a promising strategy; however, its experimental demonstration has remained elusive. Here, we fabricate ferroelectric field-eff… ▽ More Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D materials with ferroelectrics is a promising strategy; however, its experimental demonstration has remained elusive. Here, we fabricate ferroelectric field-effect transistors using a ML-WSe2 channel and a AlScN ferroelectric dielectric, and experimentally demonstrate efficient tuning as well as non-volatile control of valley polarization. We measured a large array of transistors and obtained a maximum valley polarization of ~27% at 80 K with stable retention up to 5400 secs. The enhancement in the valley polarization was ascribed to the efficient exciton-to-trion (X-T) conversion and its coupling with an out-of-plane electric field, viz. the quantum-confined Stark effect. This changes the valley depolarization pathway from strong exchange interactions to slow spin-flip intervalley scattering. Our research demonstrates a promising approach for achieving non-volatile control over valley polarization and suggests new design principles for practical valleytronic devices. △ Less

Submitted 14 November, 2023; originally announced November 2023.

Comments: Manuscript (22 pages and 5 figures), supporting information

Scalable and Stable Ferroelectric Non-Volatile Memory at > 500 $^\circ$C

Authors: Dhiren K. Pradhan, David C. Moore, Gwangwoo Kim, Yunfei He, Pariasadat Musavigharavi, Kwan-Ho Kim, Nishant Sharma, Zirun Han, Xingyu Du, Venkata S. Puli, Eric A. Stach, W. Joshua Kennedy, Nicholas R. Glavin, Roy H. Olsson III, Deep Jariwala

Abstract: Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for many emerging, complex computing and sensing in harsh environments. Ferroelectric Al$_x$Sc$_{1-x}$N exhibits strong potential for utilization in NVM devices ope… ▽ More Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for many emerging, complex computing and sensing in harsh environments. Ferroelectric Al$_x$Sc$_{1-x}$N exhibits strong potential for utilization in NVM devices operating at very high temperatures (> 500 $^\circ$C) given its stable and high remnant polarization (PR) above 100 $μ$C/cm$^2$ with demonstrated ferroelectric transition temperature (TC) > 1000 $^\circ$C. Here, we demonstrate an Al$_{0.68}$Sc$_{0.32}$N ferroelectric diode based NVM device that can reliably operate with clear ferroelectric switching up to 600 $^\circ$C with distinguishable On and Off states. The coercive field (EC) from the Pulsed I-V measurements is found to be -5.84 (EC-) and +5.98 (EC+) (+/- 0.1) MV/cm at room temperature (RT) and found to decrease with increasing temperature up to 600 $^\circ$C. The devices exhibit high remnant polarizations (> 100 $μ$C/cm$^2$) which are stable at high temperatures. At 500 $^\circ$C, our devices show 1 million read cycles and stable On-Off ratio above 1 for > 6 hours. Finally, the operating voltages of our AlScN ferrodiodes are < 15 V at 600 $^\circ$C which is well matched and compatible with Silicon Carbide (SiC) based high temperature logic technology, thereby making our demonstration a major step towards commercialization of NVM integrated high-T computers. △ Less

Submitted 8 September, 2023; originally announced September 2023.

Comments: MS and SI

Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes

Authors: Xiwen Liu, John Ting, Yunfei He, Merrilyn Mercy Adzo Fiagbenu, Jeffrey Zheng, Dixiong Wang, Jonathan Frost, Pariasadat Musavigharavi, Giovanni Esteves, Kim Kisslinger, Surendra B. Anantharaman, Eric A. Stach, Roy H. Olsson III, Deep Jariwala

Abstract: The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data centric processing. At a hardware level, this presents an urgent need to integrate dense, high-performance and low-power memory units with Si logic-processor units. However, data-heavy problems such as search and pattern matching also require paradigm changing inn… ▽ More The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data centric processing. At a hardware level, this presents an urgent need to integrate dense, high-performance and low-power memory units with Si logic-processor units. However, data-heavy problems such as search and pattern matching also require paradigm changing innovations at the circuit and architecture level to enable compute in memory (CIM) operations. CIM architectures that combine data storage yet concurrently offer low-delay and small footprint are highly sought after but have not been realized. Here, we present Aluminum Scandium Nitride (AlScN) ferroelectric diode (FeD) memristor devices that allow for storage, search and neural network-based pattern recognition in a transistor-free architecture. Our devices can be directly integrated on top of Si processors in a scalable, back-end-of-line process. We leverage the field-programmability, non-volatility and non-linearity of FeDs to demonstrated circuit blocks that can support search operations in-situ memory with search delay times < 0.1 ns and a cell footprint < 0.12 um^2. In addition, we demonstrate matrix multiplication operations with 4-bit operation of the FeDs. Our results highlight FeDs as promising candidates for fast, efficient, and multifunctional CIM platforms. △ Less

Submitted 10 February, 2022; originally announced February 2022.

Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs

Authors: Kwan-Ho Kim, Seyong Oh, Merrilyn Mercy Adzo Fiagbenu, Jeffrey Zheng, Pariasadat Musavigharavi, Pawan Kumar, Nicholas Trainor, Areej Aljarb, Yi Wan, Hyong Min Kim, Keshava Katti, Zichen Tang, Vincent C. Tung, Joan Redwing, Eric A. Stach, Roy H. Olsson III, Deep Jariwala

Abstract: Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as artificial intelligence. Despite decades of efforts, reliable, compact, energy efficient and scalable memory devices are elusive. Ferroelectric Field… ▽ More Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as artificial intelligence. Despite decades of efforts, reliable, compact, energy efficient and scalable memory devices are elusive. Ferroelectric Field Effect Transistors (FE-FETs) are a promising candidate but their scalability and performance in a back-end-of-line (BEOL) process remain unattained. Here, we present scalable BEOL compatible FE-FETs using two-dimensional (2D) MoS2 channel and AlScN ferroelectric dielectric. We have fabricated a large array of FE-FETs with memory windows larger than 7.8 V, ON/OFF ratios of greater than 10^7, and ON current density greater than 250 uA/um, all at ~80 nm channel lengths. Our devices show stable retention up to 20000 secs and endurance up to 20000 cycles in addition to 4-bit pulse programmable memory features thereby opening a path towards scalable 3D hetero-integration of 2D semiconductor memory with Si CMOS logic. △ Less

Submitted 6 January, 2022; originally announced January 2022.

A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor

Authors: Xiwen Liu, Jeffrey Zheng, Dixiong Wang, Pariasadat Musavigharavi, Eric A. Stach, Roy Olsson III, Deep Jariwala

Abstract: We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandium doped aluminum nitride as the ferroelectric layer. We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandium doped aluminum nitride as the ferroelectric layer. △ Less

Submitted 5 January, 2021; v1 submitted 17 December, 2020; originally announced December 2020.

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor

Authors: Xiwen Liu, Dixiong Wang, Jeffrey Zheng, Pariasadat Musavigharavi, Jinshui Miao, Eric A. Stach, Roy H. Olsson III, Deep Jariwala

Abstract: In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a ferroelectric field-effect transistor (FE-FET). However, subsequent efforts to produce a practical, compact FE-FET have been plagued by low retention and incompatibility with Complementary Metal Oxide Semiconductor (CMO… ▽ More In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a ferroelectric field-effect transistor (FE-FET). However, subsequent efforts to produce a practical, compact FE-FET have been plagued by low retention and incompatibility with Complementary Metal Oxide Semiconductor (CMOS) process integration. These difficulties led to the development of trapped-charge based memory devices (also called floating gate or flash memory), and these are now the mainstream non-volatile memory (NVM) technology. Over the past two decades, advances in oxide FE materials have rejuvenated the field of ferroelectrics and made FE random access memories (FE-RAM) a commercial reality. Despite these advances, commercial FE-RAM based on lead zirconium titanate (PZT) has stalled at the 130 nm due to process challenges.The recent discovery of scandium doped aluminum nitride (AlScN) as a CMOS compatible ferroelectric presents new opportunities for direct memory integration with logic transistors due to the low temperature of AlScN deposition (approx. 350 C). This temperature is compatible with CMOS back end of line processes. Here, we present a FE-FET device composed of an AlScN FE dielectric layer integrated with a channel layer of a van der Waals two-dimensional (2D) semiconductor, MoS2. Our devices show an ON/OFF ratio ~ 10^6, concurrent with a normalized memory window of 0.3 V/nm. The devices also demonstrate stable, two-state memory retention for up to 10^4 seconds. Our simulations and experimental results suggest that the combination of AlScN and 2D semiconductors is nearly ideal for low power FE-FET memory. These results demonstrate a new approach in embedded memory and in-memory computing, and could even lead to effective neuromorphic computing architectures. △ Less

Submitted 22 October, 2020; originally announced October 2020.