Showing 1–50 of 81 results for author: Xu, H Q

A Study on Magnetic-sensitivity Wavelength Position of the Working Line Used by the Full-Disk Magnetograph onboard the Advanced Space based Solar Observatory (ASO-S/FMG)

Authors: S. Liu, J. T. Su, X. Y. Bai, Y. Y. Deng, J. Chen, Y. L. Song, X. F. Wang, H. Q. Xu, X. Yang, Shahid Idrees

Abstract: Utilizing data from the $Solar$ $Magnetism$ and $Activity$ $Telescope$ (SMAT), analytical solutions of polarized radiative transfer equations, and in-orbit test data from the Full-disk Magnetograph (FMG) onboard the Advanced Space based Solar Observatory (ASO-S), this study reveals the magnetic-sensitivity spectral positions for the Fe {\sc i} $λ$5234.19 A, working line used by FMG. From the exper… ▽ More Utilizing data from the $Solar$ $Magnetism$ and $Activity$ $Telescope$ (SMAT), analytical solutions of polarized radiative transfer equations, and in-orbit test data from the Full-disk Magnetograph (FMG) onboard the Advanced Space based Solar Observatory (ASO-S), this study reveals the magnetic-sensitivity spectral positions for the Fe {\sc i} $λ$5234.19 A, working line used by FMG. From the experimental data of SMAT, it is found that the most sensitivity position is located at the line center for linear polarization (Stokes-Q/U), while it is about -0.07 A away from the line center for circular polarization (Stokes-V). Moreover, both the theoretical analysis and the in-orbit test data analysis of FMG prove again the above results. Additionally, the theoretical analysis suggests the presence of distinct spectral pockets (centered at 0.08-0.15 A) from the line, harboring intense magnetic sensitivity across all three Stokes parameters. Striking a balance between high sensitivity for both linear and circular polarization while capturing additional valuable information, a spectral position of -0.08 A emerges as the champion for routine FMG magnetic-field observations. △ Less

Submitted 26 May, 2024; originally announced May 2024.

Comments: 12pages,8figures

Journal ref: Solar Physics, 2024,May

Gate-defined quantum point contacts in a germanium quantum well

Authors: Han Gao, Zhen-Zhen Kong, Po Zhang, Yi Luo, Haitian Su, Xiao-Fei Liu, Gui-Lei Wang, Ji-Yin Wang, H. Q. Xu

Abstract: We report an experimental study of quantum point contacts defined in a high-quality strained germanium quantum well with layered electric gates. At zero magnetic field, we observe quantized conductance plateaus in units of 2$e^2/h$. Bias-spectroscopy measurements reveal that the energy spacing between successive one-dimensional subbands ranges from 1.5 to 5\,meV as a consequence of the small effec… ▽ More We report an experimental study of quantum point contacts defined in a high-quality strained germanium quantum well with layered electric gates. At zero magnetic field, we observe quantized conductance plateaus in units of 2$e^2/h$. Bias-spectroscopy measurements reveal that the energy spacing between successive one-dimensional subbands ranges from 1.5 to 5\,meV as a consequence of the small effective mass of the holes and the narrow gate constrictions. At finite magnetic fields perpendicular to the device plane, the edges of the conductance plateaus get splitted due to the Zeeman effect and Landé $g$ factors are estimated to be $\sim6.6$ for the holes in the germanium quantum well. We demonstrate that all quantum point contacts in the same device have comparable performances, indicating a reliable and reproducible device fabrication process. Thus, our work lays a foundation for investigating multiple forefronts of physics in germanium-based quantum devices that require quantum point contacts as a building block. △ Less

Submitted 5 May, 2024; originally announced May 2024.

Coupling of quantum-dot states via elastic-cotunneling and crossed Andreev reflection in a minimal Kitaev chain

Authors: Zhi-Hai Liu, Chuanchang Zeng, H. Q. Xu

Abstract: Recently, exciting progress has been made in using the superconducting nanowires coupled to gate-defined quantum dots (QDs) to mimic the Kiteav chain and realize the Majorana-bound states via a poor man's route. The essential ingredient is to balance the interdot elastic-cotunneling (ECT) and crossed Andreev reflection (CAR). As theoretically proposed, this can be mediated by the Andreev bound sta… ▽ More Recently, exciting progress has been made in using the superconducting nanowires coupled to gate-defined quantum dots (QDs) to mimic the Kiteav chain and realize the Majorana-bound states via a poor man's route. The essential ingredient is to balance the interdot elastic-cotunneling (ECT) and crossed Andreev reflection (CAR). As theoretically proposed, this can be mediated by the Andreev bound states (ABSs) formed in the superconducting nanowires. However, most of the gate-tuning asymmetric features observed in experiments can not be captured using the current theoretical models. To address this insufficiency, here, we consider a full model that explicitly includes all the details of both the QD states and the ABSs. Remarkable agreement is found with the recent experimental observations, where our model correctly reveals the gate-tuning asymmetry in ECTs and by which the average QD state energy can also be extracted. In contrast, CARs do not depend on the tuning of QD states. Moreover, armed with the tunability of ECTs and CARs with QD states, we also predict a controllable anisotropic superexchange interaction between electron spins in the two separated QDs. △ Less

Submitted 13 March, 2024; originally announced March 2024.

Superconducting switching jump induced missing first Shapiro step in Al-InSb nanosheet Josephson junctions

Authors: Xingjun Wu, Haitian Su, Chuanchang Zeng, Ji-Yin Wang, Shili Yan, Dong Pan, Jianhua Zhao, Po Zhang, H. Q. Xu

Abstract: The absence of odd-order Shapiro steps is one of the predicted signatures for topological superconductors. Experimentally, the missing first-order Shapiro step has been reported in several superconducting systems presumably to be topologically non-trivial, as well as in the topologically trivial regime of superconductor-semiconductor Josephson junctions. In this work, we revisit the missing first… ▽ More The absence of odd-order Shapiro steps is one of the predicted signatures for topological superconductors. Experimentally, the missing first-order Shapiro step has been reported in several superconducting systems presumably to be topologically non-trivial, as well as in the topologically trivial regime of superconductor-semiconductor Josephson junctions. In this work, we revisit the missing first Shapiro step signature in the topologically trivial regime of Al-InSb nanosheet Josephson junctions under microwave irradiation. The missing first Shapiro step is found to be accompanied by a sharp voltage jump during the superconducting switching and reappears when the jump is softened by increasing temperature or magnetic field. The missing first Shapiro step also reappears with an increased microwave frequency. The sharp switching jump, existing without microwave irradiation, deviates from the relation given by the standard resistively shunted junction (RSJ) model. Missing Shapiro step signatures are qualitatively captured by introducing the sharp voltage jump into the RSJ model. This work reveals a common, yet overlooked, phenomenon that leads to the missing first Shapiro step, providing a new perspective on fractional Josephson experiments. △ Less

Submitted 12 March, 2024; originally announced March 2024.

Microwave-assisted unidirectional superconductivity in Al-InAs nanowire-Al junctions under magnetic fields

Authors: Haitian Su, Ji-Yin Wang, Han Gao, Yi Luo, Shili Yan, Xingjun Wu, Guoan Li, Jie Shen, Li Lu, Dong Pan, Jianhua Zhao, Po Zhang, H. Q. Xu

Abstract: Under certain symmetry-breaking conditions, a superconducting system exhibits asymmetric critical currents, dubbed the ``superconducting diode effect" (SDE). Recently, systems with the ideal superconducting diode efficiency or unidirectional superconductivity (USC) have received considerable interest. In this work, we report the study of Al-InAs nanowire-Al Josephson junctions under microwave irra… ▽ More Under certain symmetry-breaking conditions, a superconducting system exhibits asymmetric critical currents, dubbed the ``superconducting diode effect" (SDE). Recently, systems with the ideal superconducting diode efficiency or unidirectional superconductivity (USC) have received considerable interest. In this work, we report the study of Al-InAs nanowire-Al Josephson junctions under microwave irradiation and magnetic fields. We observe an enhancement of SDE under microwave driving, featured by a horizontal offset of the zero-voltage step in the voltage-current characteristic that increases with microwave power. Devices reach the USC regime at sufficiently high driving amplitudes. The offset changes sign with the reversal of the magnetic field direction. Meanwhile, the offset magnitude exhibits a roughly linear response to the microwave power in dBm when both the power and the magnetic field are large. The signatures observed are reminiscent of a recent theoretical proposal using the resistively shunted junction (RSJ) model. However, the experimental results are not fully explained by the RSJ model, indicating a new mechanism for USC that is possibly related to non-equilibrium dynamics in periodically driven superconducting systems. △ Less

Submitted 3 February, 2024; originally announced February 2024.

The Magnetic Field Calibration of the Full-Disk Magnetograph onboard the Advanced Space based Solar Observatory (ASO-S/FMG)

Authors: S. Liu, J. T. Su, X. Y. Bai, Y. Y. Deng, J. Chen, Y. L. Song, X. F. Wang, H. Q. Xu, X. Yang

Abstract: The Full-disk magnetograph is a main scientific payload onboard the Advanced Space based Solar Observatory (ASO-S/FMG) that through Stokes parameter observation to measures the vector magnetic field. The accuracy of magnetic-field values is an important aspect of checking the quality of the FMG magnetic-field measurement. According to the design of the FMG, the linear calibration method under the… ▽ More The Full-disk magnetograph is a main scientific payload onboard the Advanced Space based Solar Observatory (ASO-S/FMG) that through Stokes parameter observation to measures the vector magnetic field. The accuracy of magnetic-field values is an important aspect of checking the quality of the FMG magnetic-field measurement. According to the design of the FMG, the linear calibration method under the weak-field approximation is the preferred scheme for magnetic-field calibration. However, the spacecraft orbital velocity can affect the position of observed spectral lines, then result in a change of the polarization-signal strength. Thus, the magnetic field is modulated by the orbit velocity of the spacecraft. In this article, through cross calibration between FMG and HMI (Helioseismic and Magnetic Imager onboard the Solar Dynamic Observatory), the effects of spacecraft orbital velocity on the coefficient of magnetic-field calibration are investigated. By comparing the magnetic field of FMG and HMI with spacecraft orbital velocity as an auxiliary reference, the revised linear-calibration coefficients that depend on spacecraft orbital velocity are obtained. Magnetic field of FMG corrected by the revised calibration coefficients removing the effect of spacecraft orbital velocity will be more accurate and suitable for scientific research. △ Less

Submitted 30 November, 2023; originally announced December 2023.

Comments: 20 pages, 7 figures

Journal ref: solphys 2023

Scattering description of edge states in Aharonov-Bohm triangle chains

Authors: Zhi-Hai Liu, O. Entin-Wohlman, A. Aharony, J. Q. You, H. Q. Xu

Abstract: Scattering theory has been suggested as a convenient method to identify topological phases of matter, in particular of disordered systems for which the Bloch band-theory approach is inapplicable. Here we examine this idea, employing as a benchmark a one-dimensional triangle chain whose versatility yields a scattering matrix that ``flows" in parameter space among several members of the topology cla… ▽ More Scattering theory has been suggested as a convenient method to identify topological phases of matter, in particular of disordered systems for which the Bloch band-theory approach is inapplicable. Here we examine this idea, employing as a benchmark a one-dimensional triangle chain whose versatility yields a scattering matrix that ``flows" in parameter space among several members of the topology classification scheme. Our results show that the reflection amplitudes (from both ends of a sufficiently long chain) do indicate the appearance of edge states in {\it all} (topological and non-topological) cases. For the topological cases, the transmission has a peak at the topological phase transition, which happens at the Fermi energy. A peak still exists as one moves into the non-topological `trivial' regions, in which another transmission peak may occur at nonzero energy, at which a relevant edge state appears in the isolated chain. For finite chains, the peak in the transmission strongly depends on their coupling of the leads, and {\it not} on the phase transition of the isolated chain. In any case, {\it the appearance of a peak in the transmission is not sufficient to conclude that the system undergoes a topological phase transition.} △ Less

Submitted 9 November, 2023; originally announced November 2023.

Journal ref: Phys. Rev. B 109, L081408 (2024)

Strain effects in twisted spiral antimonene

Authors: Ding-Ming Huang, Xu Wu, Kai Chang, Hao Hu, Ye-Liang Wang, H. Q. Xu, Jian-Jun Zhang

Abstract: van der Waals (vdW) layered materials exhibit fruitful novel physical properties. The energy band of such materials depends strongly on their structures and a tremendous variation in their physical properties can be deduced from a tiny change in inter-layer spacing, twist angle, or in-plane strain. In this work, a kind of vdW layered material of spiral antimonene is constructed, and the strain eff… ▽ More van der Waals (vdW) layered materials exhibit fruitful novel physical properties. The energy band of such materials depends strongly on their structures and a tremendous variation in their physical properties can be deduced from a tiny change in inter-layer spacing, twist angle, or in-plane strain. In this work, a kind of vdW layered material of spiral antimonene is constructed, and the strain effects in the material are studied. The spiral antimonene is grown on a germanium (Ge) substrate and is induced by a helical dislocation penetrating through few-atomic-layers of antimonene (\b{eta}-phase). The as-grown spiral is intrinsically strained and the lattice distortion is found to be pinned around the dislocation. Both spontaneous inter-layer twist and in-plane anisotropic strain are observed in scanning tunneling microscope (STM) measurements. The strain in the spiral antimonene can be significantly modified by STM tip interaction, leading to a variation in the surface electronic density of states (DOS) and a large modification in the work function of up to a few hundreds of milli-electron-volts (meV). Those strain effects are expected to have potential applications in building up novel piezoelectric devices. △ Less

Submitted 26 October, 2023; originally announced October 2023.

Comments: 11 pages, 4 figures, Supporting Information

Journal ref: Advanced Science 10, 2301326 (2023)

Topological phase transition in a narrow bandgap semiconductor nanolayer

Authors: Zhi-Hai Liu, Wenkai Lou, Kai Chang, H. Q. Xu

Abstract: Narrow bandgap semiconductor nanostructures have been explored for realization of topological superconducting quantum devices in which Majorana states can be created and employed for constructing topological qubits. However, a prerequisite to achieve the topological phase transition in these nanostructures is application of a magnetic field, which could complicate the technology development toward… ▽ More Narrow bandgap semiconductor nanostructures have been explored for realization of topological superconducting quantum devices in which Majorana states can be created and employed for constructing topological qubits. However, a prerequisite to achieve the topological phase transition in these nanostructures is application of a magnetic field, which could complicate the technology development towards topological quantum computing. Here we demonstrate that a topological phase transition can be achieved in a narrow bandgap semiconductor nanolayer under application of a perpendicular electric field. Based on full band structure calculations, it is shown that the topological phase transition occurs at an electric-field induced band inversion and is accompanied by a sharp change of the $\mathbb{Z}_{2}$ invariant at the critical field. We also demonstrate that the nontrivial topological phase is manifested by the quantum spin Hall edge states in a band-inverted nanolayer Hall-bar structure. We present the phase diagram of the nanolayer in the space of layer thickness and electric field strength, and discuss the optimal conditions to achieve a large topological bandgap in the electric-field induced topological phase of a semiconductor nanolayer. △ Less

Submitted 26 October, 2023; originally announced October 2023.

Comments: 6 pages, 5 figures

Spin-Orbit Interaction Enabled High-Fidelity Two-Qubit Gates

Authors: Jiaan Qi, Zhi-Hai Liu, H. Q. Xu

Abstract: We study the implications of spin-orbit interaction (SOI) for two-qubit gates (TQGs) in semiconductor spin qubit platforms. SOI renders the exchange interaction governing qubit pairs anisotropic, posing a serious challenge for conventional TQGs derived for the isotropic Heisenberg exchange. Starting from microscopic level, we develop a concise computational Hamiltonian that captures the essence of… ▽ More We study the implications of spin-orbit interaction (SOI) for two-qubit gates (TQGs) in semiconductor spin qubit platforms. SOI renders the exchange interaction governing qubit pairs anisotropic, posing a serious challenge for conventional TQGs derived for the isotropic Heisenberg exchange. Starting from microscopic level, we develop a concise computational Hamiltonian that captures the essence of SOI, and use it to derive properties of the rotating-frame time evolutions. Two key findings are made. First, for the controlled-phase/controlled-Z gate, we show and analytically prove the existence of ``SOI nodes'' where the fidelity can be optimally enhanced, with only slight modifications in terms of gate time and local phase corrections. Second, we discover and discuss novel two-qubit dynamics that are inaccessible without SOI -- the reflection gate and the direct controlled-not gate. The relevant conditions and achievable fidelities are studied for the direct controlled-not gate. △ Less

Submitted 23 October, 2023; v1 submitted 14 August, 2023; originally announced August 2023.

Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions

Authors: Shili Yan, Haitian Su, Dong Pan, Weijie Li, Zhaozheng Lyu, Mo Chen, Xingjun Wu, Li Lu, Jianhua Zhao, Ji-Yin Wang, H. Q. Xu

Abstract: High-quality free-standing InAs nanosheets are emerging layered semiconductor materials with potentials in designing planar Josephson junction devices for novel physics studies due to their unique properties including strong spin-orbit couplings, large Landé g-factors and the two dimensional nature. Here, we report an experimental study of proximity induced superconductivity in planar Josephson ju… ▽ More High-quality free-standing InAs nanosheets are emerging layered semiconductor materials with potentials in designing planar Josephson junction devices for novel physics studies due to their unique properties including strong spin-orbit couplings, large Landé g-factors and the two dimensional nature. Here, we report an experimental study of proximity induced superconductivity in planar Josephson junction devices made from free-standing InAs nanosheets. The nanosheets are grown by molecular beam epitaxy and the Josephson junction devices are fabricated by directly contacting the nanosheets with superconductor Al electrodes. The fabricated devices are explored by low-temperature carrier transport measurements. The measurements show that the devices exhibit a gate-tunable supercurrent, multiple Andreev reflections, and a good quality superconductor-semiconductor interface. The superconducting characteristics of the Josephson junctions are investigated at different magnetic fields and temperatures, and are analyzed based on the Bardeen-Cooper-Schrieffer (BCS) theory. The measurements of ac Josephson effect are also conducted under microwave radiations with different radiation powers and frequencies, and integer Shapiro steps are observed. Our work demonstrates that InAs nanosheet based hybrid devices are desired systems for investigating forefront physics, such as the two-dimensional topological superconductivity. △ Less

Submitted 20 April, 2023; originally announced April 2023.

Charge states, triple points and quadruple points in an InAs nanowire triple quantum dot revealed by an integrated charge sensor

Authors: Weijie Li, Zhihai Liu, Jingwei Mu, Yi Luo, Dong Pan, Jianhua Zhao, H. Q. Xu

Abstract: A serial triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized from an InAs nanowire via a fine finger-gate technique. The complex charge states and intriguing properties of the device are studied in the few-electron regime by direct transport measurements and by charge-sensor detection measurements. The measurements of the charge stability diagram for a capacitivel… ▽ More A serial triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized from an InAs nanowire via a fine finger-gate technique. The complex charge states and intriguing properties of the device are studied in the few-electron regime by direct transport measurements and by charge-sensor detection measurements. The measurements of the charge stability diagram for a capacitively coupled, parallel double-QD formed from a QD in the TQD and the sensor QD show a visible capacitance coupling between the TQD and the sensor QD, indicating a good sensitivity of the charge sensor. The charge stability diagrams of the TQD are measured by the charge sensor and the global features seen in the measured charge stability diagrams are well reproduced by the simultaneous measurements of the direct transport current through the TQD and by the simulation made based on an effective capacitance network model. The complex charge stability diagrams of the TQD are measured in detail with the integrated charge sensor in an energetically degenerate region, where all the three QDs are on or nearly on resonance, and the formations of quadruple points and of all possible eight charge states are observed. In addition, the operation of the TQD as a quantum cellular automata is demonstrated and discussed. △ Less

Submitted 2 March, 2023; originally announced March 2023.

Comments: 18 pages, 4 figures, Supplementary Information included

Journal ref: Adv. Quantum Technol. 6, 2200158 (2023)

Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices

Authors: Li Zhang, Yuanjie Chen, Dong Pan, Shaoyun Huang, Jianhua Zhao, H. Q. Xu

Abstract: Semiconductor InSb nanosheet/hexagonal boron nitride (hBN)/graphite trilayers are fabricated, and single- and double-gate devices made from the trilayers are realized and characterized. The InSb nanosheets employed in the trilayer devices are epitaxially grown, free-standing, zincblende crystals and are in micrometer lateral sizes. The hBN and graphite flakes are obtained by exfoliation. Each tril… ▽ More Semiconductor InSb nanosheet/hexagonal boron nitride (hBN)/graphite trilayers are fabricated, and single- and double-gate devices made from the trilayers are realized and characterized. The InSb nanosheets employed in the trilayer devices are epitaxially grown, free-standing, zincblende crystals and are in micrometer lateral sizes. The hBN and graphite flakes are obtained by exfoliation. Each trilayer is made by successively stacking an InSb nanosheet on an hBN flake and on a graphite flake using a home-made alignment stacking/transfer setup. The fabricated single- and double-gate devices are characterized by electrical and/or magnetotransport measurements. In all these devices, the graphite and hBN flakes are employed as the bottom gates and the gate dielectrics. The measurements of a fabricated single bottom-gate field-effect device show that the InSb nanosheet in the device has an electron field-effect mobility of ~7300 cm$^2$V$^{-1}$s$^{-1}$ and a low gate hysteresis of ~0.05 V at 1.9 K. The measurements of a double-gate Hall-bar device show that both the top and the bottom gate exhibit strong capacitive couplings to the InSb nanosheet channel and can thus tune the nanosheet channel conduction effectively. The electron Hall mobility in the InSb nanosheet of the Hall-bar device is extracted to be larger than 1.1$\times$10$^4$ cm$^2$V$^{-1}$s$^{-1}$ at a sheet electron density of ~6.1$\times$10$^{11}$ cm$^{-2}$ and 1.9 K and, thus, the device exhibits well-defined Shubnikov-de Haas oscillations. △ Less

Submitted 19 August, 2022; originally announced August 2022.

Comments: 18 pages, 3 figures, Supplementary Information

Journal ref: Nanotechnology 33, 325303 (2022)

Electrically tunable spin-orbit interaction in an InAs nanosheet

Authors: Furong Fan, Yuanjie Chen, Dong Pan, Jianhua Zhao, H. Q. Xu

Abstract: We report on an experimental study of the spin-orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer characteristic measurements show that independent tunings of the carrier density in the nanosheet and the potential difference across the nanosheet can be efficiently achieved with use of the dual gate. The quantum transport c… ▽ More We report on an experimental study of the spin-orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer characteristic measurements show that independent tunings of the carrier density in the nanosheet and the potential difference across the nanosheet can be efficiently achieved with use of the dual gate. The quantum transport characteristics of the InAs nanosheet are investigated by magnetoconductance measurements at low temperatures. It is shown that the electron transport in the nanosheet can be tuned from the weak antilocalization to the weak localization and then back to the weak antilocalization regime with a voltage applied over the dual gate without a change in carrier density. The spin-orbit length extracted from the magnetoconductance measurements at a constant carrier density exhibits a peak value at which the SOI of the Rashba type is suppressed and the spin relaxation due to the presence of an SOI of the Dresselhaus type in the nanosheet can be revealed. Energy band diagram simulations have also been carried out for the device at the experimental conditions and the physical insights into the experimental observations have been discussed in light of the results of simulations. △ Less

Submitted 19 August, 2022; originally announced August 2022.

Comments: 17 pages, 5 figures and Supplementary Materials

Journal ref: Nanoscale Adv. 4, 2642 (2022)

Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet

Authors: Li Zhang, Dong Pan, Yuanjie Chen, Jianhua Zhao, H. Q. Xu

Abstract: A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by gate-transfer characteristic and magnetotransport measurements at low temperatures. The measurements show that the carriers in the InSb nanosheet are of electrons and… ▽ More A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by gate-transfer characteristic and magnetotransport measurements at low temperatures. The measurements show that the carriers in the InSb nanosheet are of electrons and the carrier density in the nanosheet can be highly efficiently tuned by the graphite gate. The mobility of the electrons in the InSb nanosheet is extracted from low-field magneotransport measurements and a value of the mobility exceeding ~18000 cm$^2$V$^{-1}$s$^{-1}$ is found. High-field magentotransport measurements show well-defined Shubnikov-de Haas (SdH) oscillations in the longitudinal resistance of the InSb nanosheet. Temperature-dependent measurements of the SdH oscillations are carried out and key transport parameters, including the electron effective mass m$^*$$\sim$0.028 m$_0$ and the quantum lifetime $τ$$\sim$0.046 ps, in the InSb nanosheet are extracted. It is for the first time that such experimental measurements have been reported for a free-standing InSb nanosheet and the results obtained indicate that InSb nanosheet/hBN/graphite gate structures can be used to develop advanced quantum devices for novel physics studies and for quantum technology applications. △ Less

Submitted 19 August, 2022; originally announced August 2022.

Comments: 20 pages, 5 figures

Journal ref: Chin. Phys. B 31, 098507 (2022)

Electron transport properties of a narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet

Authors: Xiaobo Li, Haitian Su, H. Q. Xu

Abstract: A thin, narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet is obtained via mechanical exfoliation and a Hall-bar device is fabricated from it on a heavily doped Si/SiO$_2$ substrate and studied at low temperatures. Gate transfer characteristic measurements show that the transport carriers in the nanosheet are of $n$-type. The carrier density, mobility, and mean free path in the nanosheet are det… ▽ More A thin, narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet is obtained via mechanical exfoliation and a Hall-bar device is fabricated from it on a heavily doped Si/SiO$_2$ substrate and studied at low temperatures. Gate transfer characteristic measurements show that the transport carriers in the nanosheet are of $n$-type. The carrier density, mobility, and mean free path in the nanosheet are determined by measurements of the Hall resistance and the longitudinal resistance of the Hall-bar device and it is found that the electron transport in the nanosheet is in a quasi-two-dimensional (2D), strongly disordered regime. Magnetotransport measurements for the device at magnetic fields applied perpendicular to the nanosheet plane show dominantly weak antilocalization (WAL) characteristics at low fields and a linear magnetoresistance (LMR) behavior at large fields. We attribute the WAL characteristics to strong spin-orbit interaction (SOI) and the LMR to the classical origin of strong disorder in the nanosheet. Low-field magnetoconductivity measurements are also performed and are analyzed based on the multi-channel Hikami-Larkin-Nagaoka theory with the LMR correction being taken into account. The phase coherence length, spin relaxation length, effective 2D conduction channel number and coefficient in the linear term due to the LMR in the nanosheet are extracted. It is found that the spin relaxation length in the Bi$_2$O$_2$Te nanosheet is several times smaller than it in its counterpart Bi$_2$O$_2$Se nanosheet and thus an ultra-strong SOI is present in the Bi$_2$O$_2$Te nanosheet. Our results reported in this study would greatly encourage further studies and applications of this emerging narrow-bandgap semiconductor 2D material. △ Less

Submitted 19 August, 2022; originally announced August 2022.

Comments: 14 pages, 3 figures, and Supplementary Materials

Journal ref: Appl. Phys. Lett. 120, 233102 (2022)

Surface-bulk coupling in a Bi$_2$Te$_3$ nanoplate grown by van der Waals epitaxy

Authors: Xiaobo Li, Mengmeng Meng, Shaoyun Huang, Congwei Tan, Congcong Zhang, Hailin Peng, H. Q. Xu

Abstract: We report on an experimental study of the effect of coherent surface-bulk electron scattering on quantum transport in a three-dimensional topological insulator Bi$_2$Te$_3$ nanoplate. The nanoplate is grown via van der Waals epitaxy on a mica substrate and a top-gated Hall-bar device is fabricated from the nanoplate directly on the growth substrate. Top-gate voltage dependent measurements of the s… ▽ More We report on an experimental study of the effect of coherent surface-bulk electron scattering on quantum transport in a three-dimensional topological insulator Bi$_2$Te$_3$ nanoplate. The nanoplate is grown via van der Waals epitaxy on a mica substrate and a top-gated Hall-bar device is fabricated from the nanoplate directly on the growth substrate. Top-gate voltage dependent measurements of the sheet resistance of the device reveal that the transport carriers in the nanoplate are of n-type and that, with decreasing top gate voltage, the carrier density in the nanoplate is decreased. However, the mobility is increased with decreasing top-gate voltage. This mobility increase with decreasing carrier density in the nanoplate is demonstrated to arise from a decrease in bulk-to-surface electron scattering rate. Low-field magnetotransport measurements are performed at low temperatures. The measured magnetoconductivity of the nanoplate shows typical weak anti-localization (WAL) characteristics. We analyze the measurements by taking surface-bulk inter-channel electron scattering into account and extract dephasing times $τ_φ$, diffusion coefficients $D$ of electrons at the top surface and in the bulk, and the surface-bulk scattering times $τ_{SB}$ as a function of top-gate voltage and temperature. It is found that the dephasing in the nanoplate arises dominantly from electron-electron scattering with small energy transfers. It is also found that the ratio of $τ_φ$/$τ_{SB}$ (a measure of the surface-bulk electron coherent coupling) is decreased with decreasing gate voltage or increasing temperature. We demonstrate that taking the surface-bulk coherent electron scattering in our Bi$_2$Te$_3$ nanoplate into account is essential to understand quantum transport measurements at low temperatures. △ Less

Submitted 10 February, 2022; originally announced February 2022.

Comments: 15 pages, 3 figures, Supplementary Materials

Journal ref: Nanoscale 14, 2586 (2022)

A Study on Correcting the Effect of Polarization Crosstalk in Full-Disk Solar Photospheric Magnetic Fields Observations

Authors: S. Liu, J. T. Su, X. Y. Bai, Y. Y Deng, J. Chen, Y. L. Song, X. F. Wang, H. Q. Xu, X. Yang

Abstract: Magnetography using magnetic sensitive lines is regarded traditionally as the main instrument for measuring the magnetic field of the whole Sun. Full polarized Stockes parameters ($I$, $Q$, $U$, $V$) observed can be used to deduce the magnetic field under specific theoretical model or inversion algorithms. Due to various reasons, there are often cross-talk effects among Stokes signals observed dir… ▽ More Magnetography using magnetic sensitive lines is regarded traditionally as the main instrument for measuring the magnetic field of the whole Sun. Full polarized Stockes parameters ($I$, $Q$, $U$, $V$) observed can be used to deduce the magnetic field under specific theoretical model or inversion algorithms. Due to various reasons, there are often cross-talk effects among Stokes signals observed directly by magnetographs. Especially, the circular polarized signal $V$ usually affects the linear polarized ones $Q$ and $U$ seriously, which is one of the main errors of the value of the transverse magnetic field (parallel to the solar surface) that is related to $Q$ and $U$. The full-disk magnetograph onboard the Advanced Space based Solar Observatory (ASO-S/FMG) is designed to observe Stockes parameters to deduce the vector magnetic field. In this paper, the methods correcting the effects of cross-talk $V$ to $Q$ and $U$ are based on the assumption of perfectly symmetric Q and U and anti-symmetric Stokes V profiles and a new method to reduce the crosstalk effect under observation mode of FMG is developed. Through the test, it is found that the two methods have better effect in cross-talk removal in the sunspot region, and have better consistency. Addtionally, the developed methodcan be applied to remove the cross-talk effect using only one group of $Q$, $U$ and $V$ images observed at one wavelength position. △ Less

Submitted 10 December, 2021; v1 submitted 8 December, 2021; originally announced December 2021.

Comments: 27 pages, 15 figures, accepted by SolPhys. 2021

Topological charge and spin pumping in a semiconductor nanowire

Authors: Zhi-Hai Liu, H. Q. Xu

Abstract: The adiabatic topological pumping is proposed by periodically modulating a semiconductor nanowire double-quantum-dot chain. We demonstrate that the quantized charge transport can be achieved by a nontrivial modulation of the quantum-dot well and barrier potentials. When the quantum-dot well potential is replaced by a time-dependent staggered magnetic field, the topological spin pumping can be real… ▽ More The adiabatic topological pumping is proposed by periodically modulating a semiconductor nanowire double-quantum-dot chain. We demonstrate that the quantized charge transport can be achieved by a nontrivial modulation of the quantum-dot well and barrier potentials. When the quantum-dot well potential is replaced by a time-dependent staggered magnetic field, the topological spin pumping can be realized by periodically modulating the barrier potentials and magnetic field. We also demonstrate that in the presence of Rashba spin-orbit interaction, the double-quantum-dot chain can be used to implement the topological spin pumping. However, the pumped spin in this case can have a quantization axis other than the applied magnetic field direction. Moreover, we show that all the adiabatic topological pumping are manifested by the presence of gapless edge states traversing the band gap as a function of time. △ Less

Submitted 25 August, 2021; v1 submitted 16 June, 2021; originally announced June 2021.

Report number: Journal of Applied Physics 130, 174301 (2021)

Journal ref: Journal of Applied Physics 130, 174301 (2021)

Charge detection of a quantum dot under different tunneling barrier symmetries and bias voltages

Authors: Jingwei Mu, Weijie Li, Shaoyun Huang, Dong Pan, Yuanjie Chen, Ji-Yin Wang, Jianhua Zhao, H. Q. Xu

Abstract: We report on the realization of a coupled quantum dot (QD) system containing two single QDs made in two adjacent InAs nanowires. One QD (sensor QD) is used as a charge sensor to detect the charge state transition in the other QD (target QD). We investigate the effect of the tunneling barrier asymmetry of the target QD on the detection visibility of charge state transition in the target QD. The cha… ▽ More We report on the realization of a coupled quantum dot (QD) system containing two single QDs made in two adjacent InAs nanowires. One QD (sensor QD) is used as a charge sensor to detect the charge state transition in the other QD (target QD). We investigate the effect of the tunneling barrier asymmetry of the target QD on the detection visibility of charge state transition in the target QD. The charge stability diagrams of the target QD under different configurations of barrier-gate voltages are simultaneously measured via the direct signals of electron transport through the target QD and via the detection signals of charge state transition in the target QD from the sensor QD. We find that the complete Coulomb diamond boundaries of the target QD and the transport processes involving the excited states in the target QD can be observed in the transconductance signals of the sensor QD only when the tunneling barriers of the target QD are nearly symmetric. These phenomena are explained by analyzing the effect of the ratio of the two tunneling rates on the electron transport processes through the target QD. Our results imply that it is important to consider the symmetry of the tunneling couplings when constructing a charge sensor integrated QD device or qubit. △ Less

Submitted 24 May, 2021; originally announced May 2021.

Comments: 18 pages, 5 figures

Journal ref: Nanoscale 14, 14029 (2022)

A double quantum dot defined by top gates in a single crystalline InSb nanosheet

Authors: Yuanjie Chen, Shaoyun Huang, Jingwei Mu, Dong Pan, Jianhua Zhao, H. Q. Xu

Abstract: We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular beam epitaxy and the DQD is defined by top gate technique. Through the transport measurements, we demonstrate how a single quantum dot (QD) and a DQD can be defined in an InSb nanosheet by tuning voltages applied to the… ▽ More We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular beam epitaxy and the DQD is defined by top gate technique. Through the transport measurements, we demonstrate how a single quantum dot (QD) and a DQD can be defined in an InSb nanosheet by tuning voltages applied to the top gates. We also measure the charge stability diagrams of the DQD and show that the charge states and the inter-dot coupling between the two individual QDs in the DQD can be efficiently regulated by the top gates. Numerical simulations for the potential profile and charge density distribution in the DQD have been performed and the results support the experimental findings and provide a better understanding of fabrication and transport characteristics of the DQD in the InSb nanosheet. The achieved DQD in the two-dimensional InSb nanosheet possesses pronounced benefits in lateral scaling and can thus serve as a new building block for developments of quantum computation and quantum simulation technologies. △ Less

Submitted 8 May, 2021; v1 submitted 2 May, 2021; originally announced May 2021.

Comments: 17 pages, 5 figures

Journal ref: Chinese Physics B 30, 128501 (2021)

Topological states and interplay between spin-orbit and Zeeman interactions in a spinful Su-Schrieffer-Heeger nanowire

Authors: Zhi-Hai Liu, O. Entin-Wohlman, A. Aharony, J. Q. You, H. Q. Xu

Abstract: The interplay between the spin-orbit and Zeeman interactions acting on a spinful Su-Schrieffer-Heeger model is studied based on an InAs nanowire subjected to a periodic gate potential along the axial direction. It is shown that a nontrivial topological phase can be achieved by regulating the confining-potential configuration. In the absence of the Zeeman field, we prove that the topology of the ch… ▽ More The interplay between the spin-orbit and Zeeman interactions acting on a spinful Su-Schrieffer-Heeger model is studied based on an InAs nanowire subjected to a periodic gate potential along the axial direction. It is shown that a nontrivial topological phase can be achieved by regulating the confining-potential configuration. In the absence of the Zeeman field, we prove that the topology of the chain is not affected by the Rashba spin-orbit interaction due to the persisting chiral symmetry. The energies of the edge modes can be manipulated by varying the magnitude and direction of the external magnetic field. Remarkably, the joint effect of the two spin-related interactions leads to novel edge states that appear in the gap formed by the anti-crossing of the bands of a finite spinful dimerized chain, and can be merged into the bulk states by tilting the magnetic-field direction. △ Less

Submitted 27 July, 2021; v1 submitted 15 April, 2021; originally announced April 2021.

Report number: PhysRevB.104.085302 (2021)

Journal ref: Phys. Rev. B 104, 085302 (2021)

Highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire

Authors: Jingwei Mu, Shaoyun Huang, Zhi-Hai Liu, Weijie Li, Ji-Yin Wang, Dong Pan, Guang-Yao Huang, Yuanjie Chen, Jianhua Zhao, H. Q. Xu

Abstract: Quantum dots (QDs) made from semiconductors are among the most promising platforms for the developments of quantum computing and simulation chips, and have advantages over other platforms in high density integration and in compatibility to the standard semiconductor chip fabrication technology. However, development of a highly tunable semiconductor multiple QD system still remains as a major chall… ▽ More Quantum dots (QDs) made from semiconductors are among the most promising platforms for the developments of quantum computing and simulation chips, and have advantages over other platforms in high density integration and in compatibility to the standard semiconductor chip fabrication technology. However, development of a highly tunable semiconductor multiple QD system still remains as a major challenge. Here, we demonstrate realization of a highly tunable linear quadruple QD (QQD) in a narrow bandgap semiconductor InAs nanowire with fine finger gate technique. The QQD is studied by electron transport measurements in the linear response regime. Characteristic two-dimensional charge stability diagrams containing four groups of resonant current lines of different slopes are found for the QQD. It is shown that these current lines can be individually assigned as arising from resonant electron transport through the energy levels of different QDs. Benefited from the excellent gate tunability, we also demonstrate tuning of the QQD to regimes where the energy levels of two QDs, three QDs and all the four QDs are energetically on resonance, respectively, with the fermi level of source and drain contacts. A capacitance network model is developed for the linear QQD and the simulated charge stability diagrams based on the model show good agreements with the experiments. Our work presents a solid experimental evidence that narrow bandgap semiconductor nanowires multiple QDs could be used as a versatile platform to achieve integrated qubits for quantum computing and to perform quantum simulations for complex many-body systems. △ Less

Submitted 27 January, 2021; originally announced January 2021.

Comments: 16 pages, 5 figures, Supplementary Materials

Journal ref: Nanoscale 13, 3983 (2021)

Strong and tunable spin-orbit interaction in a single crystalline InSb nanosheet

Authors: Yuanjie Chen, Shaoyun Huang, Dong Pan, Jianhong Xue, Li Zhang, Jianhua Zhao, H. Q. Xu

Abstract: A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin-orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsi… ▽ More A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin-orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin-orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin-orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices and topological quantum devices. △ Less

Submitted 11 December, 2020; originally announced December 2020.

Comments: 24 pages, 5 figures, Supplementary Information

Journal ref: npj 2D Mater. Appl. 5, 3 (2021)

Detection of charge states of an InAs nanowire triple quantum dot with an integrated nanowire charge sensor

Authors: Weijie Li, Jingwei Mu, Shaoyun Huang, Dong Pan, Jianhua Zhao, H. Q. Xu

Abstract: A linear triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized. The TQD and the charge sensor are built from two adjacent InAs nanowires by fine finger gate technique. The charge state configurations of the nanowire TQD are studied by measurements of the direct transport signals of the TQD and by detection of the charge state transitions in the TQD via the nanowire… ▽ More A linear triple quantum dot (TQD) integrated with a quantum dot (QD) charge sensor is realized. The TQD and the charge sensor are built from two adjacent InAs nanowires by fine finger gate technique. The charge state configurations of the nanowire TQD are studied by measurements of the direct transport signals of the TQD and by detection of the charge state transitions in the TQD via the nanowire QD sensor. Excellent agreements in the charge stability diagrams of the TQD obtained by the direct transport measurements and by the charge-state transition detection measurements are achieved. It is shown that the charge stability diagrams are featured by three groups of charge state transition lines of different slopes, corresponding to the changes in the electron occupation numbers of the three individual QDs in the TQD. It is also shown that the integrated nanowire QD sensor is highly sensitive and can detect the charge state transitions in the cases where the direct transport signals of the TQD are too weak to be measurable. Tuning to a regime, where all the three QDs in the TQD are close to be on resonance with the Fermi level of the source and drain reservoirs and co-existence of triple and quadruple points becomes possible, has also been demonstrated with the help of the charge sensor in the region where the direct transport signals of the TQD are hardly visible. △ Less

Submitted 10 December, 2020; originally announced December 2020.

Comments: 17 pages, 5 figures

Journal ref: Appl. Phys. Lett. 117, 262102 (2020)

Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots

Authors: Jingwei Mu, Shaoyun Huang, Ji-Yin Wang, Guang-Yao Huang, Xuming Wang, H. Q. Xu

Abstract: We have measured the Zeeman splitting of quantum levels in few-electron quantum dots (QDs) formed in narrow bandgap InSb nanowires via the Schottky barriers at the contacts under application of different spatially orientated magnetic fields. The effective g-factor tensor extracted from the measurements is strongly anisotropic and level-dependent, which can be attributed to the presence of strong s… ▽ More We have measured the Zeeman splitting of quantum levels in few-electron quantum dots (QDs) formed in narrow bandgap InSb nanowires via the Schottky barriers at the contacts under application of different spatially orientated magnetic fields. The effective g-factor tensor extracted from the measurements is strongly anisotropic and level-dependent, which can be attributed to the presence of strong spin-orbit interaction (SOI) and asymmetric quantum confinement potentials in the QDs. We have demonstrated a successful determination of the principal values and the principal axis orientations of the g-factor tensors in an InSb nanowire QD by the measurements under rotations of a magnetic field in the three orthogonal planes. We also examine the magnetic-field evolution of the excitation spectra in an InSb nanowire QD and extract a SOI strength of $Δ_{so}\sim 180$ $μ$eV from an avoided level crossing between a ground state and its neighboring first excited state in the QD. △ Less

Submitted 11 December, 2020; v1 submitted 14 September, 2020; originally announced September 2020.

Comments: 24 pages, 5 figures, 1 table

Journal ref: Nanotechnology 32, 020002 (2021)

Measurements of spin-orbit interaction in epitaxially grown InAs nanosheets

Authors: Furong Fan, Yuanjie Chen, Dong Pan, Jianhua Zhao, H. Q. Xu

Abstract: We report on a low-temperature transport study of a single-gate, planar field-effect device made from a free-standing, wurtzite-crystalline InAs nanosheet. The nanosheet is grown via molecular beam epitaxy and the field-effect device is characterized by gate transfer characteristic measurements and by magnetic field orientation dependent transport measurements. The measurements show that the devic… ▽ More We report on a low-temperature transport study of a single-gate, planar field-effect device made from a free-standing, wurtzite-crystalline InAs nanosheet. The nanosheet is grown via molecular beam epitaxy and the field-effect device is characterized by gate transfer characteristic measurements and by magnetic field orientation dependent transport measurements. The measurements show that the device exhibits excellent electrical properties and the electron transport in the nanosheet is of the two-dimensional nature. Low-field magnetoconductance measurements are performed for the device at different gate voltages and temperatures, and the characteristic transport lengths, such as phase coherent length, spin-orbit length and mean free path, in the nanosheet are extracted. It is found that the spin-orbit length in the nanosheet is short, on the order of 150 nm, demonstrating the presence of strong spin-orbit interaction in the InAs nanosheet. Our results show that epitaxially grown, free-standing, InAs nanosheets can serve as an emerging semiconductor nanostructure platform for applications in spintronics, spin qubits and planar topological quantum devices. △ Less

Submitted 24 September, 2020; v1 submitted 28 August, 2020; originally announced August 2020.

Comments: 14 pages, 4 figures

Journal ref: Appl. Phys. Lett. 117, 132101 (2020)

Superconductivity in an Al-Twisted Bilayer Graphene-Al Junction device

Authors: Dingran Rui, Luzhao Sun, N. Kang, Hailin Peng, Zhongfan Liu, H. Q. Xu

Abstract: We report on realization and quantum transport study of a twisted bilayer graphene (tBLG) Josephson junction device. High-quality tBLG employed in the device fabrication is obtained via chemical vapour deposition and the device is fabricated by contacting a piece of tBLG by two closely spaced Al electrodes in an Al-tBLG-Al Josephson junction configuration. Low-temperature transport measurements sh… ▽ More We report on realization and quantum transport study of a twisted bilayer graphene (tBLG) Josephson junction device. High-quality tBLG employed in the device fabrication is obtained via chemical vapour deposition and the device is fabricated by contacting a piece of tBLG by two closely spaced Al electrodes in an Al-tBLG-Al Josephson junction configuration. Low-temperature transport measurements show that below the critical temperature of the Al electrodes ($T_c\approx1.1$ K), the device exhibits sizable supercurrents at zero magnetic field, arising from the superconducting proximity effect with high contact transparency in the device. In the measurements of the critical supercurrent as a function of perpendicularly applied magnetic field, a standard Fraunhofer-like pattern of oscillations is observed, indicating a uniform supercurrent distribution inside the junction. Multiple Andreev reflection characteristics are also observed in the spectroscopy measurements of the device, and their magnetic field and temperature dependencies are found to be well described by the Bardeen$-$Cooper$-$Schrieffer theory. △ Less

Submitted 5 March, 2020; originally announced March 2020.

Comments: 14 pages, 4 figures

Journal ref: Jpn. J. Appl. Phys. 59, SGGI07 (2020)

Realization and transport investigation of a single layer-twisted bilayer graphene junction

Authors: Dingran Rui, Luzhao Sun, N. Kang, Jiayu Li, Li Lin, Hailin Peng, Zhongfan Liu, H. Q. Xu

Abstract: We report on low-temperature transport study of a single layer graphene (SLG)-twisted bilayer graphene (tBLG) junction device. The SLG-tBLG junction in the device is grown by chemical vapor deposition and the device is fabricated in a Hall-bar configuration on Si/SiO$_2$ substrate. The longitudinal resistances across the SLG-tBLG junction (cross-junction resistances) on the two sides of the Hall b… ▽ More We report on low-temperature transport study of a single layer graphene (SLG)-twisted bilayer graphene (tBLG) junction device. The SLG-tBLG junction in the device is grown by chemical vapor deposition and the device is fabricated in a Hall-bar configuration on Si/SiO$_2$ substrate. The longitudinal resistances across the SLG-tBLG junction (cross-junction resistances) on the two sides of the Hall bar and the Hall resistances of SLG and tBLG in the device are measured. In the quantum Hall regime, the measurements show that the measured cross-junction resistances exhibit a series of new quantized plateaus and the appearance of these resistance plateaus can be attributed to the presence of the well-defined edge-channel transport along the SLG-tBLG junction interface. The measurements also show that the difference between the cross-junction resistances measured on the two sides of the Hall-bar provides a sensitive measure to the edge channel transport characteristics in the two graphene layers that constitute the SLG-tBLG junction and to degeneracy lifting of the Landau levels in the tBLG layer. Temperature dependent measurements of the cross-junction resistance in the quantum Hall regime are also carried out and the influence of the transverse transport of the bulk Landau levels on the edge channel transport along the SLG-tBLG junction interface are extracted. These results enrich the understanding of the charge transport across interfaces in graphene hybrid structures and open up new opportunities for probing exotic quantum phenomena in graphene devices. △ Less

Submitted 16 April, 2020; v1 submitted 5 March, 2020; originally announced March 2020.

Comments: 20 pages, 4 figures

Journal ref: Carbon 163, 105-112 (2020)

Ambipolar Transport in Narrow Bandgap Semiconductor InSb Nanowires

Authors: B. Dalelkhan, D. Göransson, C. Thelander, K. Li, Y. J. Xing, V. F. Maisi, H. Q. Xu

Abstract: We report on transport measurement study of top-gated field effect transistors made out of InSb nanowires grown by chemical vapor deposition. The transistors exhibit ambipolar transport characteristics revealed by three distinguished gate-voltage regions: In the middle region where the fermi level resides within the bandgap, the electrical resistance shows an exponential dependence on temperature… ▽ More We report on transport measurement study of top-gated field effect transistors made out of InSb nanowires grown by chemical vapor deposition. The transistors exhibit ambipolar transport characteristics revealed by three distinguished gate-voltage regions: In the middle region where the fermi level resides within the bandgap, the electrical resistance shows an exponential dependence on temperature and gate voltage. With either more positive or negative gate voltages, the devices enter the electron and hole transport regimes, revealed by a resistance decreasing linearly with decreasing temperature. From the transport measurement data of a 1-$μ$m-long device made from a nanowire of 50 nm in diameter, we extract a bandgap energy of 190-220 meV. The off-state current of this device is found to be suppressed within the measurement noise at a temperature of T = 4 K. A shorter, 260-nm-long device is found to exhibit a finite off-state current and a hole, on-state, circumference-normalized current of 11 $μ$A/$μ$m at V$_D$ = 50 mV which is the highest for such a device to our knowledge. The ambipolar transport characteristics make the InSb nanowires attractive for CMOS electronics, hybrid electron-hole quantum systems and hole based spin qubits. △ Less

Submitted 18 January, 2020; originally announced January 2020.

Comments: 13 pages, 4 figures

Single-Electron Transistor Made of a 3D Topological Insulator Nanoplate

Authors: Yumei Jing, Shaoyun Huang, Jinxiong Wu, Mengmeng Meng, Xiaobo Li, Yu Zhou, Hailin Peng, H. Q. Xu

Abstract: Quantum confined devices of three-dimensional topological insulators have been proposed to be promising and of great importance for studies of confined topological states and for applications in low energy-dissipative spintronics and quantum information processing. The absence of energy gap on the TI surface limits the experimental realization of a quantum confined system in three-dimensional topo… ▽ More Quantum confined devices of three-dimensional topological insulators have been proposed to be promising and of great importance for studies of confined topological states and for applications in low energy-dissipative spintronics and quantum information processing. The absence of energy gap on the TI surface limits the experimental realization of a quantum confined system in three-dimensional topological insulators. This communication reports on the successful realization of single-electron transistor devices in Bi$_2$Te$_3$ nanoplates by state of the art nanofabrication techniques. Each device consists of a confined central island, two narrow constrictions that connect the central island to the source and drain, and surrounding gates. Low-temperature transport measurements demonstrate that the two narrow constrictions function as tunneling junctions and the device shows well-defined Coulomb current oscillations and Coulomb diamond shaped charge stability diagrams. This work provides a controllable and reproducible way to form quantum confined systems in three-dimensional topological insulators, which should greatly stimulate research towards confined topological states, low energy-dissipative devices and quantum information processing. △ Less

Submitted 31 August, 2019; originally announced September 2019.

Comments: 13 pages, 3 figures, Supporting Information

Journal ref: Adv. Mater. 2019, 1903686

Measurements of strain and bandgap of coherently epitaxially grown wurtzite InAsP-InP core-shell nanowires

Authors: D. J. O. Göransson, M. T. Borgström, Y. Q. Huang, M. E. Messing, D. Hessman, I. A. Buyanova, W. M. Chen, H. Q. Xu

Abstract: We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAsP-InP core-shell nanowires. The core-shell nanowires are grown via metal-organic vapor phase epitaxy. The as-grown nanowires are characterized by transmission electron microscopy, X-ray diffraction, micro-photoluminescence ($μ$PL) spectroscopy and micro-Raman ($μ$-Raman) spectroscopy measurements. W… ▽ More We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAsP-InP core-shell nanowires. The core-shell nanowires are grown via metal-organic vapor phase epitaxy. The as-grown nanowires are characterized by transmission electron microscopy, X-ray diffraction, micro-photoluminescence ($μ$PL) spectroscopy and micro-Raman ($μ$-Raman) spectroscopy measurements. We observe that the core-shell nanowires are of wurtzite (WZ) crystal phase and are coherently strained, with the core and the shell having the same number of atomic planes in each nanowire. We determine the predominantly uniaxial strains formed in the core-shell nanowires along the nanowire growth axis and demonstrate that the strains can be described using an analytical expression. The bandgap energies in the strained WZ InAsP core materials are extracted from the $μ$PL measurements of individual core-shell nanowires. The coherently strained core-shell nanowires demonstrated in this work offer the potentials for use in constructing novel optoelectronic devices and for development of piezoelectric photovoltaic devices. △ Less

Submitted 12 April, 2019; originally announced April 2019.

Comments: 18 pages, 5 figures, Supporting Information

Journal ref: Nano Letters 19, 2674 (2019)

Universal conductance fluctuations and phase-coherent transport in a semiconductor Bi$_2$O$_2$Se nanoplate with strong spin-orbit interaction

Authors: Mengmeng Meng, Shaoyun Huang, Congwei Tan, Jinxiong Wu, Xiaobo Li, Hailin Peng, H. Q. Xu

Abstract: We report on phase-coherent transport studies of a Bi$_2$O$_2$Se nanoplate and on observation of universal conductance fluctuations and spin-orbit interaction induced reduction in fluctuation amplitude in the nanoplate. Thin-layered Bi$_2$O$_2$Se nanoplates are grown by chemical vapor deposition (CVD) and transport measurements are made on a Hall-bar device fabricated from a CVD-grown nanoplate. T… ▽ More We report on phase-coherent transport studies of a Bi$_2$O$_2$Se nanoplate and on observation of universal conductance fluctuations and spin-orbit interaction induced reduction in fluctuation amplitude in the nanoplate. Thin-layered Bi$_2$O$_2$Se nanoplates are grown by chemical vapor deposition (CVD) and transport measurements are made on a Hall-bar device fabricated from a CVD-grown nanoplate. The measurements show weak antilocalization at low magnetic fields at low temperatures, as a result of spin-orbit interaction, and a crossover toward weak localization with increasing temperature. Temperature dependences of characteristic transport lengths, such as spin relaxation length, phase coherence length, and mean free path, are extracted from the low-field measurement data. Universal conductance fluctuations are visible in the low-temperature magnetoconductance over a large range of magnetic fields and the phase coherence length extracted from the autocorrelation function is in consistence with the result obtained from the weak localization analysis. More importantly, we find a strong reduction in amplitude of the universal conductance fluctuations and show that the results agree with the analysis assuming strong spin-orbit interaction in the Bi$_2$O$_2$Se nanoplate. △ Less

Submitted 11 May, 2019; v1 submitted 18 March, 2019; originally announced March 2019.

Comments: 11 pages, 4 figures, supplementary materials

Journal ref: Nanoscale 11, 10622 (2019)

Coulomb Blockade from the Shell of an InP-InAs Core-Shell Nanowire with a Triangular Cross Section

Authors: D. J. O. Göransson, M. Heurlin, B. Dalelkhan, S. Abay, M. E. Messing, V. F. Maisi, M. T. Borgström, H. Q. Xu

Abstract: We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single quantum structures, which show Coulomb blockade effect, over entire lengths of the nanowires. The core-shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown core-shell nanowires are found to be of wurtzite crystals. The InP cores have a hexa… ▽ More We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single quantum structures, which show Coulomb blockade effect, over entire lengths of the nanowires. The core-shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown core-shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shell are grown preferentially on specific {1$\bar{1}$00} facets, leading to the formation of the core-shell nanowires with an overall triangular cross section. The grown core-shell nanowires are transferred on to a Si/SiO$_2$ substrate and then contacted with several narrow metal electrodes. Low-temperature transport measurements show the Coulomb-blockade effect. We analyze the measured gate capacitance and single electron charging energy of the devices and demonstrate that a quantum structure which shows the Coulomb blockade effect of a many-electron quantum dot is formed over the full length of a single core-shell nanowire and consists of the entire InAs shell in the nanowire. △ Less

Submitted 28 January, 2019; originally announced January 2019.

Comments: 12 pages, 3 figures

Journal ref: Applied Physics Letters 114, 053108 (2019)

Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale

Authors: Dong Pan, Ji-Yin Wang, Wei Zhang, Lujun Zhu, Xiaojun Su, Shaoyun Huang, Manling Sui, Arkady Yartsev, H. Q. Xu, Jianhua Zhao

Abstract: Here, we demonstrate an approach that provides a precise control of the dimension of InAs from one-dimensional nanowires to wafer-scale free-standing two-dimensional nanosheets, which have a high degree of crystallinity and outstanding electrical and optical properties, using molecular-beam epitaxy by controlling catalyst alloy segregation. In our approach, two-dimensional InAs nanosheets can be o… ▽ More Here, we demonstrate an approach that provides a precise control of the dimension of InAs from one-dimensional nanowires to wafer-scale free-standing two-dimensional nanosheets, which have a high degree of crystallinity and outstanding electrical and optical properties, using molecular-beam epitaxy by controlling catalyst alloy segregation. In our approach, two-dimensional InAs nanosheets can be obtained directly from one-dimensional InAs nanowires by silver-indium alloy segregation, which is much easier than all previously reported method, such as traditional buffering technique and select area epitaxial growth. Detailed transmission electron microscopy investigations provide a solid evidence that the catalyst alloy segregation is the origination of the InAs dimensional transformation from one-dimensional nanowires to two-dimensional nanosheets, and even to three-dimensional complex crosses. Using this method, we find that the wafer-scale free-standing InAs nanosheets can be grown on various substrates including Si, MgO, sapphire and GaAs etc. The InAs nanosheets grown at high temperature are pure phase single crystals and have a high electron mobility and a long time-resolved THz kinetics lifetime. Our work will open up a conceptually new and general technology route toward the effective controlling the dimension of the low-dimensional III-V semiconductors. It may also enable the low-cost fabrication of free-standing nanosheet-based devices on an industrial scale. △ Less

Submitted 13 November, 2018; originally announced November 2018.

Comments: 18 pages,8 figures

Journal ref: Nano Letters 2019, 19, 1632-1642

Gate defined quantum dot realized in a single crystalline InSb nanosheet

Authors: Jianhong Xue, Yuanjie Chen, Dong Pan, Ji-Yin Wang, Jianhua Zhao, Shaoyun Huang, H. Q. Xu

Abstract: Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological quantum computing. Here we report on realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate and the q… ▽ More Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological quantum computing. Here we report on realization of a quantum dot device from a single crystalline InSb nanosheet grown by molecular-beam epitaxy. The device is fabricated from the nanosheet on a Si/SiO2 substrate and the quantum dot confinement is achieved by top gate technique. Transport measurements show a series of Coulomb diamonds, demonstrating that the quantum dot is well defined and highly tunable. Tunable, gate-defined, planar InSb quantum dots offer a renewed platform for developing semiconductor-based quantum computation technology. △ Less

Submitted 3 October, 2018; originally announced October 2018.

Comments: 12 pages, 4 figures

Journal ref: Appl. Phys. Lett. 114, 023108 (2019)

Transport signatures of relativistic quantum scars in a graphene cavity

Authors: G. Q. Zhang, Xianzhang Chen, Li Lin, Hailin Peng, Zhongfan Liu, Liang Huang, N. Kang, H. Q. Xu

Abstract: We study a relativistic quantum cavity system realized by etching out from a graphene sheet by quantum transport measurements and theoretical calculations. The conductance of the graphene cavity has been measured as a function of the back gate voltage (or the Fermi energy) and the magnetic field applied perpendicular to the graphene sheet, and characteristic conductance contour patterns are observ… ▽ More We study a relativistic quantum cavity system realized by etching out from a graphene sheet by quantum transport measurements and theoretical calculations. The conductance of the graphene cavity has been measured as a function of the back gate voltage (or the Fermi energy) and the magnetic field applied perpendicular to the graphene sheet, and characteristic conductance contour patterns are observed in the measurements. In particular, two types of high conductance contour lines, i.e., straight and parabolic-like high conductance contour lines, are found in the measurements. The theoretical calculations are performed within the framework of tight-binding approach and Green's function formalism. Similar characteristic high conductance contour features as in the experiments are found in the calculations. The wave functions calculated at points selected along a straight conductance contour line are found to be dominated by a chain of scars of high probability distributions arranged as a necklace following the shape of cavity and the current density distributions calculated at these point are dominated by an overall vortex in the cavity. These characteristics are found to be insensitive to increasing magnetic field. However, the wave function probability distributions and the current density distributions calculated at points selected along a parabolic-like contour line show a clear dependence on increasing magnetic field, and the current density distributions at these points are characterized by the complex formation of several localized vortices in the cavity. Our work brings a new insight into quantum chaos in relativistic particle systems and would greatly stimulate experimental and theoretical efforts towards this still emerging field. △ Less

Submitted 23 September, 2018; originally announced September 2018.

Comments: 20 pages, 6 figures

Journal ref: Phys. Rev. B 101, 085404 (2020)

Anomalous negative magnetoresistance in quantum-dot Josephson junctions with Kondo correlations

Authors: M. -T. Deng, C. -L. Yu, G. -Y. Huang, R. Lopez, P. Caroff, S. G. Ghalamestani, G. Platero, H. Q. Xu

Abstract: The interplay between superconductivity and the Kondo effect has stimulated significant interest in condensed matter physics. They compete when their critical temperatures are close and can give rise to a quantum phase transition that can mimic Majorana zero modes. Here, we have fabricated and measured Al-InSb nanowire quantum dot-Al devices. In the Kondo regime, a supercurrent- induced zero-bias… ▽ More The interplay between superconductivity and the Kondo effect has stimulated significant interest in condensed matter physics. They compete when their critical temperatures are close and can give rise to a quantum phase transition that can mimic Majorana zero modes. Here, we have fabricated and measured Al-InSb nanowire quantum dot-Al devices. In the Kondo regime, a supercurrent- induced zero-bias conductance peak emerges. This zero-bias peak shows an anomalous negative magnetoresistance (NMR) at weak magnetic fields. We attribute this anomalous NMR to quasi- particle trapping at vortices in the superconductor leads as a weak magnetic field is applied. The trapping effect lowers the quasiparticle-caused dissipation and thus enhances the Josephson current. This work connects the vortex physics and the supercurrent tunneling in Kondo regimes and can help further understand the physics of Josephson quantum dot system. △ Less

Submitted 19 March, 2024; v1 submitted 21 August, 2018; originally announced August 2018.

Comments: 11 pages, 10 figures, Supplemental Materials

Anisotropic Pauli spin-blockade effect and spin-orbit interaction field in an InAs nanowire double quantum dot

Authors: Ji-Yin Wang, Guang-Yao Huang, Shaoyun Huang, Jianhong Xue, Dong Pan, Jianhua Zhao, H. Q. Xu

Abstract: We report on experimental detection of the spin-orbit interaction field in an InAs nanowire double quantum dot device. In the spin blockade regime, leakage current through the double quantum dot is measured and is used to extract the effects of spin-orbit interaction and hyperfine interaction on spin state mixing. At finite magnetic fields, the leakage current arising from the hyperfine interactio… ▽ More We report on experimental detection of the spin-orbit interaction field in an InAs nanowire double quantum dot device. In the spin blockade regime, leakage current through the double quantum dot is measured and is used to extract the effects of spin-orbit interaction and hyperfine interaction on spin state mixing. At finite magnetic fields, the leakage current arising from the hyperfine interaction is suppressed and the spin-orbit interaction dominates spin state mixing. We observe dependence of the leakage current on the applied magnetic field direction and determine the direction of the spin-orbit interaction field. We show that the spin-orbit field lies in a direction perpendicular to the nanowire axis but with a pronounced off-substrate-plane angle. It is for the first time that such an off-substrate-plane spin-orbit field in an InAs nanowire has been detected. The results are expected to have an important implication in employing InAs nanowires to construct spin-orbit qubits and topological quantum devices. △ Less

Submitted 20 March, 2018; originally announced March 2018.

Comments: 20 pages, 5 figures, Supporting Information

Journal ref: Nano Lett. 18, 4741 (2018)

Low-field magnetotransport in graphene cavity devices

Authors: G. Q. Zhang, N. Kang, J. Y. Li, Li Lin, Hailin Peng, Zhongfan Liu, H. Q. Xu

Abstract: Confinement and edge structures are known to play significant roles in electronic and transport properties of two-dimensional materials. Here, we report on low-temperature magnetotransport measurements of lithographically patterned graphene cavity nanodevices. It is found that the evolution of the low-field magnetoconductance characteristics with varying carrier density exhibits different behavior… ▽ More Confinement and edge structures are known to play significant roles in electronic and transport properties of two-dimensional materials. Here, we report on low-temperature magnetotransport measurements of lithographically patterned graphene cavity nanodevices. It is found that the evolution of the low-field magnetoconductance characteristics with varying carrier density exhibits different behaviors in graphene cavity and bulk graphene devices. In the graphene cavity devices, we have observed that intravalley scattering becomes dominant as the Fermi level gets close to the Dirac point. We associate this enhanced intravalley scattering to the effect of charge inhomogeneities and edge disorder in the confined graphene nanostructures. We have also observed that the dephasing rate of carriers in the cavity devices follows a parabolic temperature dependence, indicating that the direct Coulomb interaction scattering mechanism governs the dephasing at low temperatures. Our results demonstrate the importance of confinement in carrier transport in graphene nanostructure devices. △ Less

Submitted 25 February, 2018; originally announced February 2018.

Comments: 13 pages, 5 figures

Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures

Authors: Jiayu Li, Li Lin, Guang-Yao Huang, N. Kang, Jincan Zhang, Hailin Peng, Zhongfan Liu, H. Q. Xu

Abstract: Graphene/hexagonal boron nitride (G/$h$-BN) heterostructures offer an excellent platform for developing nanoelectronic devices and for exploring correlated states in graphene under modulation by a periodic superlattice potential. Here, we report on transport measurements of nearly $0^{\circ}$-twisted G/$h$-BN heterostructures. The heterostructures investigated are prepared by dry transfer and ther… ▽ More Graphene/hexagonal boron nitride (G/$h$-BN) heterostructures offer an excellent platform for developing nanoelectronic devices and for exploring correlated states in graphene under modulation by a periodic superlattice potential. Here, we report on transport measurements of nearly $0^{\circ}$-twisted G/$h$-BN heterostructures. The heterostructures investigated are prepared by dry transfer and thermally annealing processes and are in the low mobility regime (approximately $3000~\mathrm{cm}^{2}\mathrm{V}^{-1}\mathrm{s}^{-1}$ at 1.9 K). The replica Dirac spectra and Hofstadter butterfly spectra are observed on the hole transport side, but not on the electron transport side, of the heterostructures. We associate the observed electron-hole asymmetry to the presences of a large difference between the opened gaps in the conduction and valence bands and a strong enhancement in the interband contribution to the conductivity on the electron transport side in the low-mobility G/$h$-BN heterostructures. We also show that the gaps opened at the central Dirac point and the hole-branch secondary Dirac point are large, suggesting the presence of strong graphene-substrate interaction and electron-electron interaction in our G/$h$-BN heterostructures. Our results provide additional helpful insight into the transport mechanism in G/$h$-BN heterostructures. △ Less

Submitted 9 February, 2018; originally announced February 2018.

Comments: 7 pages, 4 figures

Two-dimensional Mott variable-range hopping transport in a disordered MoS$_2$ nanoflake

Authors: Jianhong Xue, Shaoyun Huang, Ji-Yin Wang, H. Q. Xu

Abstract: The transport characteristics of a disordered MoS$_2$ nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The layered MoS$_2$ nanoflake is exfoliated from a bulk MoS$_2$ crystal and the conductance $G$ and magnetoresistance are measured in a four-probe setup over a wide range of temperatures. At high temperatures, we observe that $\log_{10}G$ exhibits a… ▽ More The transport characteristics of a disordered MoS$_2$ nanoflake in the insulator regime are studied by electrical and magnetotransport measurements. The layered MoS$_2$ nanoflake is exfoliated from a bulk MoS$_2$ crystal and the conductance $G$ and magnetoresistance are measured in a four-probe setup over a wide range of temperatures. At high temperatures, we observe that $\log_{10}G$ exhibits a $-T^{-1}$ temperature dependence and the transport in the nanoflake dominantly arises from thermal activation. At low temperatures, where the transport in the nanoflake dominantly takes place via variable-range hopping (VRH) processes, we observe that $\log_{10}G$ exhibits a $-T^{-1/3}$ temperature dependence, an evidence for the two-dimensional (2D) Mott VRH transport. The measured low-field magnetoresistance of the nanoflake in the insulator regime exhibits a quadratic magnetic field dependence $\sim αB^2$ with $α\sim T^{-1}$, fully consistent with the 2D Mott VRH transport in the nanoflake. △ Less

Submitted 26 January, 2018; originally announced January 2018.

Comments: 14 pages, 4 figures, and Supplemental Materials

Journal ref: RSC Advances 9, 17885 (2019)

Majorana bound states and subgap states in three-terminal topological superconducting nanowire-quantum dot hybrid devices

Authors: Guang-Yao Huang, Xin Liu, H. Q. Xu

Abstract: Three-terminal topological superconducting nanowire (TSNW)-quantum dot (QD) hybrid junction devices are studied. The energy spectra and the wave functions of the subgap states are calculated as a function of the superconducting phase differences between TSNWs and as a function of the QD level energy based on the Bogoliubov-de Gennes tight-binding Hamiltonians. It is shown that when the QD level is… ▽ More Three-terminal topological superconducting nanowire (TSNW)-quantum dot (QD) hybrid junction devices are studied. The energy spectra and the wave functions of the subgap states are calculated as a function of the superconducting phase differences between TSNWs and as a function of the QD level energy based on the Bogoliubov-de Gennes tight-binding Hamiltonians. It is shown that when the QD level is located near or inside the superconducting gap, there can exist eight subgap states. Among them, four low energy (two positive and two negative) subgap states are essentially formed by linear combinations of the six Majorana bound states (MBSs) located at the ends of the three TSNWs. The remaining four high energy subgap states are mainly built from linear combinations of the QD state and the three MBSs of the TSNWs adjacent to the QD. When there is no QD level near or inside the superconducting gap, only six subgap states built from linear combinations of the six MBSs of the three TSNWs can be present in the system. It is also shown that there exists a unique point in the parameter space of the superconducting phase differences between TSNWs, at which the energies of the six low energy subgap states move close to each other towards nearly zero energies. Simple but general effective model Hamiltonians for the three-terminal TSNW-QD hybrid devices have also been developed. Based on the effective model Hamiltonians, the subgap states of the three-terminal TSNW-QD hybrid devices in the limit of the three infinitely long TSNWs are studied. The results of the calculations and the effective model Hamiltonians could be used as a starting point to construct and investigate the braiding schemes of MBSs in TSNW junction devices. △ Less

Submitted 26 January, 2018; originally announced January 2018.

Comments: 12 pages, 6 figures

Strong spin-orbit interaction and magnetotransport in semiconductor Bi$_2$O$_2$Se nanoplates

Authors: Mengmeng Meng, Shaoyun Huang, Congwei Tan, Jinxiong Wu, Yumei Jing, Hailin Peng, H. Q. Xu

Abstract: Semiconductor Bi$_2$O$_2$Se nanolayers of high crystal quality have been realized via epitaxial growth. These two-dimensional (2D) materials possess excellent electron transport properties with potential application in nanoelectronics. It is also strongly expected that the 2D Bi$_2$O$_2$Se nanolayers could be of an excellent material platform for developing spintronic and topological quantum devic… ▽ More Semiconductor Bi$_2$O$_2$Se nanolayers of high crystal quality have been realized via epitaxial growth. These two-dimensional (2D) materials possess excellent electron transport properties with potential application in nanoelectronics. It is also strongly expected that the 2D Bi$_2$O$_2$Se nanolayers could be of an excellent material platform for developing spintronic and topological quantum devices, if the presence of strong spin-orbit interaction in the 2D materials can be experimentally demonstrated. Here, we report on experimental determination of the strength of spin-orbit interaction in Bi$_2$O$_2$Se nanoplates through magnetotransport measurements. The nanoplates are epitaxially grown by chemical vapor deposition and the magnetotransport measurements are performed at low temperatures. The measured magnetoconductance exhibits a crossover behavior from weak antilocalization to weak localization at low magnetic fields with increasing temperature or decreasing back gate voltage. We have analyzed this transition behavior of the magnetoconductance based on an interference theory which describes the quantum correction to the magnetoconductance of a 2D system in the presence of spin-orbit interaction. Dephasing length and spin relaxation length are extracted from the magnetoconductance measurements. Comparing to other semiconductor nanostructures, the extracted relatively short spin relaxation length of ~150 nm indicates the existence of strong spin-orbit interaction in Bi$_2$O$_2$Se nanolayers. △ Less

Submitted 3 January, 2018; originally announced January 2018.

Comments: 14 pages, 4 figures, and 5 pages of Supplementary Materials

Journal ref: Nanoscale 10, 2704 (2018)

Coherent transport in a linear triple quantum dot made from a pure-phase InAs nanowire

Authors: Ji-Yin Wang, Shaoyun Huang, Guang-Yao Huang, Dong Pan, Jianhua Zhao, H. Q. Xu

Abstract: A highly tunable linear triple quantum dot (TQD) device is realized in a single-crystalline pure-phase InAs nanowire using a local finger gate technique. The electrical measurements show that the charge stability diagram of the TQD can be represented by three kinds of current lines of different slopes and a simulation performed based on a capacitance matrix model confirms the experiment. We show t… ▽ More A highly tunable linear triple quantum dot (TQD) device is realized in a single-crystalline pure-phase InAs nanowire using a local finger gate technique. The electrical measurements show that the charge stability diagram of the TQD can be represented by three kinds of current lines of different slopes and a simulation performed based on a capacitance matrix model confirms the experiment. We show that each current line observable in the charge stability diagram is associated with a case where a QD is on resonance with the Fermi level of the source and drain reservoirs. At a triple point where two current lines of different slopes move together but show anti-crossing, two QDs are on resonance with the Fermi level of the reservoirs. We demonstrate that an energetically degenerated quadruple point, at which all three QDs are on resonance with the Fermi level of the reservoirs, can be built by moving two separated triple points together via sophistically tuning of energy levels in the three QDs. We also demonstrate the achievement of direct coherent electron transfer between the two remote QDs in the TQD, realizing a long-distance coherent quantum bus operation. Such a long-distance coherent coupling could be used to investigate coherent spin teleportation and super-exchange effects and to construct a spin qubit with an improved long coherent time and with spin state detection solely by sensing the charge states. △ Less

Submitted 16 June, 2017; v1 submitted 12 June, 2017; originally announced June 2017.

Comments: 19 pages, 5 figures

Journal ref: Nano Lett. 17, 4158 (2017)

Electron-Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene

Authors: Jiayu Li, Li Lin, Dingran Rui, Qiucheng Li, Jincan Zhang, Ning Kang, Yanfeng Zhang, Hailin Peng, Zhongfan Liu, H. Q. Xu

Abstract: Graphitic nitrogen-doped graphene is an excellent platform to study scattering processes of massless Dirac fermions by charged impurities, in which high mobility can be preserved due to the absence of lattice defects through direct substitution of carbon atoms in the graphene lattice by nitrogen atoms. In this work, we report on electrical and magnetotransport measurements of high-quality graphiti… ▽ More Graphitic nitrogen-doped graphene is an excellent platform to study scattering processes of massless Dirac fermions by charged impurities, in which high mobility can be preserved due to the absence of lattice defects through direct substitution of carbon atoms in the graphene lattice by nitrogen atoms. In this work, we report on electrical and magnetotransport measurements of high-quality graphitic nitrogen-doped graphene. We show that the substitutional nitrogen dopants in graphene introduce atomically sharp scatters for electrons but long-range Coulomb scatters for holes and, thus, graphitic nitrogen-doped graphene exhibits clear electron-hole asymmetry in transport properties. Dominant scattering processes of charge carriers in graphitic nitrogen-doped graphene are analyzed. It is shown that the electron-hole asymmetry originates from a distinct difference in intervalley scattering of electrons and holes. We have also carried out the magnetotransport measurements of graphitic nitrogen-doped graphene at different temperatures and the temperature dependences of intervalley scattering, intravalley scattering and phase coherent scattering rates are extracted and discussed. Our results provide an evidence for the electron-hole asymmetry in the intervalley scattering induced by substitutional nitrogen dopants in graphene and shine a light on versatile and potential applications of graphitic nitrogen-doped graphene in electronic and valleytronic devices. △ Less

Submitted 3 May, 2017; originally announced May 2017.

Comments: 35 pages, 5 figures

Journal ref: ACS Nano 11, 4641 (2017)

Gate tunable parallel double quantum dot in InAs double-nanowire junctions

Authors: S. Baba, S. Matsuo, H. Kamata, R. S. Deacon, A. Oiwa K. Li, H. Q. Xu, S. Tarucha

Abstract: We report fabrication and measurement of a device where closely-placed two parallel InAs nanowires (NWs) are contacted by source and drain normal metal electrodes. Established technique includes selective deposition of double nanowires onto a previously defined gate region. By tuning the junction with the finger bottom gates, we confirmed the formation of parallel double quantum dots, one in each… ▽ More We report fabrication and measurement of a device where closely-placed two parallel InAs nanowires (NWs) are contacted by source and drain normal metal electrodes. Established technique includes selective deposition of double nanowires onto a previously defined gate region. By tuning the junction with the finger bottom gates, we confirmed the formation of parallel double quantum dots, one in each NW, with a finite electrostatic coupling between each other. With the fabrication technique established in this study, devices proposed for more advanced experiments, such as Cooper-pair splitting and the observation of parafermions, can be realized. △ Less

Submitted 10 March, 2017; originally announced March 2017.

Study of 0-$π$ phase transition in hybrid superconductor-InSb nanowire quantum dot devices

Authors: S. Li, N. Kang, P. Caroff, H. Q. Xu

Abstract: Hybrid superconductor-semiconducting nanowire devices provide an ideal platform to investigating novel intragap bound states, such as the Andreev bound states (ABSs), Yu-Shiba-Rusinov (YSR) states, and the Majorana bound states. The competition between Kondo correlations and superconductivity in Josephson quantum dot (QD) devices results in two different ground states and the occurrence of a 0-… ▽ More Hybrid superconductor-semiconducting nanowire devices provide an ideal platform to investigating novel intragap bound states, such as the Andreev bound states (ABSs), Yu-Shiba-Rusinov (YSR) states, and the Majorana bound states. The competition between Kondo correlations and superconductivity in Josephson quantum dot (QD) devices results in two different ground states and the occurrence of a 0-$π$ quantum phase transition. Here we report on transport measurements on hybrid superconductor-InSb nanowire QD devices with different device geometries. We demonstrate a realization of continuous gate-tunable ABSs with both 0-type levels and $π$-type levels. This allow us to manipulate the transition between 0 and $π$ junction and explore charge transport and spectrum in the vicinity of the quantum phase transition regime. Furthermore, we find a coexistence of 0-type ABS and $π$-type ABS in the same charge state. By measuring temperature and magnetic field evolution of the ABSs, the different natures of the two sets of ABSs are verified, being consistent with the scenario of phase transition between the singlet and doublet ground state. Our study provides insights into Andreev transport properties of hybrid superconductor-QD devices and sheds light on the crossover behavior of the subgap spectrum in the vicinity of 0-$π$ transition. △ Less

Submitted 29 December, 2016; originally announced December 2016.

Journal ref: Phys. Rev. B 95, 014515 (2017)

Majorana fermions in topological insulator nanowires: from single superconducting nanowires to Josephson junctions

Authors: Guang-Yao Huang, H. Q. Xu

Abstract: Signatures of Majorana fermion bound states in one-dimensional topological insulator (TI) nanowires with proximity effect induced superconductivity are studied. The phase diagram and energy spectra are calculated for single TI nanowires and it is shown that the nanowires can be in the topological invariant phases of winding numbers $W=0, \pm 1$, and $\pm 2$ corresponding to the cases with zero, on… ▽ More Signatures of Majorana fermion bound states in one-dimensional topological insulator (TI) nanowires with proximity effect induced superconductivity are studied. The phase diagram and energy spectra are calculated for single TI nanowires and it is shown that the nanowires can be in the topological invariant phases of winding numbers $W=0, \pm 1$, and $\pm 2$ corresponding to the cases with zero, one and two pairs of Majorana fermions in the single TI nanowires. It is also shown that the topological winding numbers, i.e., the numbers of pairs of Majorana fermions in the TI nanowires can be extracted from the transport measurements of a Josephson junction device made from two TI nanowires, while the sign in the winding numbers can be extracted using a superconducting quantum interference device (SQUID) setup. △ Less

Submitted 4 March, 2017; v1 submitted 7 December, 2016; originally announced December 2016.

Comments: 7 pages, 6 figures

Journal ref: Phys. Rev. B 95, 155420 (2017)

Extracting band structure characteristics of GaSb/InAs core-shell nanowires from thermoelectric properties

Authors: Florinda Viñas, H. Q. Xu, Martin Leijnse

Abstract: Nanowires with a GaSb core and an InAs shell (and the inverted structure) are interesting for studies of electron-hole hybridization and interaction effects due to the bulk broken band-gap alignment at the material interface. We have used eight-band $\mathbf{k\cdot p}$ theory together with the envelope function approximation to calculate the band structure of such nanowires. For a fixed core radiu… ▽ More Nanowires with a GaSb core and an InAs shell (and the inverted structure) are interesting for studies of electron-hole hybridization and interaction effects due to the bulk broken band-gap alignment at the material interface. We have used eight-band $\mathbf{k\cdot p}$ theory together with the envelope function approximation to calculate the band structure of such nanowires. For a fixed core radius, as a function of shell thickness the band structure changes from metallic (for a thick shell) to semiconducting (for a thin shell) with a gap induced by quantum confinement. For intermediate shell thickness, a different gapped band structure can appear, where the gap is induced by hybridization between the valence band in GaSb and the conduction band in InAs. To establish a relationship between the nanowire band structures and signatures in thermoelectrical measurements, we use the calculated energy dispersions as input to the Boltzmann equation and to ballistic transport equations to study the diffusive limit and the ballistic limit, respectively. Our theoretical results provide a guide for experiments, showing how thermoelectric measurements in a gated setup can be used to distinguish between different types of band gaps, or tune the system into a regime with few electrons and few holes, which can be of interest for studies of exciton physics. △ Less

Submitted 31 March, 2017; v1 submitted 4 October, 2016; originally announced October 2016.

Comments: Updated to published version

Journal ref: Phys. Rev. B 95, 115420 (2017)