Showing 1–4 of 4 results for author: Zhai, K Y

Correlated Electronic Structure and Density-Wave Gap in Trilayer Nickelate La4Ni3O10

Authors: X. Du, Y. D. Li, Y. T. Cao, C. Y. Pei, M. X. Zhang, W. X. Zhao, K. Y. Zhai, R. Z. Xu, Z. K. Liu, Z. W. Li, J. K. Zhao, G. Li, Y. L. Chen, Y. P. Qi, H. J. Guo, L. X. Yang

Abstract: The discovery of pressurized superconductivity at 80 K in La3Ni2O7 officially brings nickelates into the family of high-temperature superconductors, which gives rise to not only new insights but also mysteries in the strongly correlated superconductivity. More recently, the sibling compound La4Ni3O10 was also shown to be superconducting below about 25 K under pressure, further boosting the popular… ▽ More The discovery of pressurized superconductivity at 80 K in La3Ni2O7 officially brings nickelates into the family of high-temperature superconductors, which gives rise to not only new insights but also mysteries in the strongly correlated superconductivity. More recently, the sibling compound La4Ni3O10 was also shown to be superconducting below about 25 K under pressure, further boosting the popularity of nickelates in the Ruddlesden-Popper phase. In this study, combining high-resolution angle-resolved photoemission spectroscopy and ab initio calculation, we systematically investigate the electronic structures of La4Ni3O10 at ambient pressure. We reveal a high resemblance of La4Ni3O10 with La3Ni2O7 in the orbital-dependent fermiology and electronic structure, suggesting a similar electronic correlation between the two compounds. The temperature-dependent measurements imply an orbital-dependent energy gap related to the density-wave transition in La4Ni3O10. By comparing the theoretical pressure-dependent electronic structure, clues about the superconducting high-pressure phase can be deduced from the ambient measurements, providing crucial information for deciphering the unconventional superconductivity in nickelates. △ Less

Submitted 30 May, 2024; originally announced May 2024.

Ultrafast Dynamics of Bilayer and Trilayer Nickelate Superconductors

Authors: Y. D. Li, Y. T. Cao, L. Y. Liu, P. Peng, H. Lin, C. Y. Pei, M. X. Zhang, H. Wu, X. Du, W. X. Zhao, K. Y. Zhai, J. K. Zhao, M. -L. Lin, P. H. Tan, Y. P. Qi, G. Li, H. J. Guo, Luyi Yang, L. X. Yang

Abstract: In addition to the pressurized high-temperature superconductivity, bilayer and trilayer nickelate superconductors Lan+1NinO3n+1 (n = 2 and 3) exhibit many intriguing properties at ambient pressure, such as orbital-dependent electronic correlation, non-Fermi liquid behavior, and density-wave transitions. Here, using ultrafast reflectivity measurement, we observe a drastic difference between the ult… ▽ More In addition to the pressurized high-temperature superconductivity, bilayer and trilayer nickelate superconductors Lan+1NinO3n+1 (n = 2 and 3) exhibit many intriguing properties at ambient pressure, such as orbital-dependent electronic correlation, non-Fermi liquid behavior, and density-wave transitions. Here, using ultrafast reflectivity measurement, we observe a drastic difference between the ultrafast dynamics of the bilayer and trilayer nickelates at ambient pressure. Firstly, we observe a coherent phonon mode in La4Ni3O10 involving the collective vibration of La, Ni, and O atoms, which is absent in La3Ni2O7. Secondly, the temperature-dependent relaxation time diverges near the density-wave transition temperature of La4Ni3O10, in drastic contrast to kink-like changes in La3Ni2O7. Moreover, we estimate the electron-phonon coupling constants to be 0.05~0.07 and 0.12~0.16 for La3Ni2O7 and La4Ni3O10, respectively, suggesting a relatively minor role of electron-phonon coupling in the electronic properties of Lan+1NinO3n+1. Our work not only sheds light on the relevant microscopic interaction but also establishes a foundation for further studying the interplay between superconductivity and density-wave transitions in nickelate superconductors. △ Less

Submitted 7 March, 2024; originally announced March 2024.

Topological electronic structure and spin texture of quasi-one-dimensional higher-order topological insulator Bi4Br4

Authors: W. X. Zhao, M. Yang, R. Z. Xu, X. Du, Y. D. Li, K. Y. Zhai, C. Peng, D. Pei, H. Gao, Y. W. Li, L. X. Xu, J. F. Han, Y. Huang, Z. K. Liu, Y. G. Yao, J. C. Zhuang, Y. Du, J. J. Zhou, Y. L. Chen, L. X. Yang

Abstract: The notion of topological insulators (TIs), characterized by an insulating bulk and conducting topological surface states, can be extended to higher-order topological insulators (HOTIs) hosting gapless modes localized at the boundaries of two or more dimensions lower than the insulating bulk1-5. In this work, by performing high-resolution angle-resolved photoemission spectroscopy (ARPES) measureme… ▽ More The notion of topological insulators (TIs), characterized by an insulating bulk and conducting topological surface states, can be extended to higher-order topological insulators (HOTIs) hosting gapless modes localized at the boundaries of two or more dimensions lower than the insulating bulk1-5. In this work, by performing high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements with submicron spatial and spin resolutions, we systematically investigate the electronic structure and spin texture of quasi-one-dimensional (1D) HOTI candidate Bi4Br4. In contrast to the bulk-state-dominant spectra on the (001) surface, we observe gapped surface states on the (100) surface, whose dispersion and spin-polarization agree well with our ab initio calculations. Moreover, we reveal in-gap states connecting the surface valence and conduction bands, which is an explicit signature of the existence of hinge states inside the (100) surface gap. Our findings provide compelling evidence for the HOTI phase of Bi4Br4. The identification of the higher-order topological phase will lay the promising prospect of applications based on 1D spin-momentum locked current in electronic and spintronic devices. △ Less

Submitted 6 November, 2023; originally announced November 2023.

Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4

Authors: Q. Q. Zhang, Y. Shi, K. Y. Zhai, W. X. Zhao, X. Du, J. S. Zhou, X. Gu, R. Z. Xu, Y. D. Li, Y. F. Guo, Z. K. Liu, C. Chen, S. -K. Mo, T. K. Kim, C. Cacho, J. W. Yu, W. Li, Y. L. Chen, Jiun-Haw Chu, L. X. Yang

Abstract: EuTe4 is a newly-discovered van der Waals material exhibiting a novel charge-density wave (CDW) with a large thermal hysteresis in the resistivity and CDW gap. In this work, we systematically study the electronic structure and transport properties of EuTe4 using high-resolution angle-resolved photoemission spectroscopy (ARPES), magnetoresistance measurements, and scanning tunneling microscopy (STM… ▽ More EuTe4 is a newly-discovered van der Waals material exhibiting a novel charge-density wave (CDW) with a large thermal hysteresis in the resistivity and CDW gap. In this work, we systematically study the electronic structure and transport properties of EuTe4 using high-resolution angle-resolved photoemission spectroscopy (ARPES), magnetoresistance measurements, and scanning tunneling microscopy (STM). We observe a CDW gap of about 200 meV at low temperatures that persists up to 400 K, suggesting that the CDW transition occurs at a much higher temperature. We observe a large thermal hysteretic behavior of the ARPES intensity near the Fermi level, consistent with the resistivity measurement. The hysteresis in the resistivity measurement does not change under a magnetic field up to 7 T, excluding the thermal magnetic hysteresis mechanism. Instead, the surface topography measured with STM shows surface domains with different CDW trimerization directions, which may be important for the thermal hysteretic behavior of EuTe4. Interestingly, we observe a large negative magnetoresistance at low temperatures that can be associated with the canting of magnetically ordered Eu spins. Our work shed light on the understanding of magnetic, transport, and electronic properties of EuTe4. △ Less

Submitted 5 March, 2023; originally announced March 2023.