Showing 1–20 of 20 results for author: Alibart, F

Versatile CMOS Analog LIF Neuron for Memristor-Integrated Neuromorphic Circuits

Authors: Nikhil Garg, Davide Florini, Patrick Dufour, Eloir Muhr, Mathieu Faye, Marc Bocquet, Damien Querlioz, Yann Beilliard, Dominique Drouin, Fabien Alibart, Jean-Michel Portal

Abstract: Heterogeneous systems with analog CMOS circuits integrated with nanoscale memristive devices enable efficient deployment of neural networks on neuromorphic hardware. CMOS Neuron with low footprint can emulate slow temporal dynamics by operating with extremely low current levels. Nevertheless, the current read from the memristive synapses can be higher by several orders of magnitude, and performing… ▽ More Heterogeneous systems with analog CMOS circuits integrated with nanoscale memristive devices enable efficient deployment of neural networks on neuromorphic hardware. CMOS Neuron with low footprint can emulate slow temporal dynamics by operating with extremely low current levels. Nevertheless, the current read from the memristive synapses can be higher by several orders of magnitude, and performing impedance matching between neurons and synapses is mandatory. In this paper, we implement an analog leaky integrate and fire (LIF) neuron with a voltage regulator and current attenuator for interfacing CMOS neurons with memristive synapses. In addition, the neuron design proposes a dual leakage that could enable the implementation of local learning rules such as voltage-dependent synaptic plasticity. We also propose a connection scheme to implement adaptive LIF neurons based on two-neuron interaction. The proposed circuits can be used to interface with a variety of synaptic devices and process signals of diverse temporal dynamics. △ Less

Submitted 28 June, 2024; originally announced June 2024.

Comments: Accepted to International Conference on Neuromorphic Systems (ICONS 2024)

Expanding memory in recurrent spiking networks

Authors: Ismael Balafrej, Fabien Alibart, Jean Rouat

Abstract: Recurrent spiking neural networks (RSNNs) are notoriously difficult to train because of the vanishing gradient problem that is enhanced by the binary nature of the spikes. In this paper, we review the ability of the current state-of-the-art RSNNs to solve long-term memory tasks, and show that they have strong constraints both in performance, and for their implementation on hardware analog neuromor… ▽ More Recurrent spiking neural networks (RSNNs) are notoriously difficult to train because of the vanishing gradient problem that is enhanced by the binary nature of the spikes. In this paper, we review the ability of the current state-of-the-art RSNNs to solve long-term memory tasks, and show that they have strong constraints both in performance, and for their implementation on hardware analog neuromorphic processors. We present a novel spiking neural network that circumvents these limitations. Our biologically inspired neural network uses synaptic delays, branching factor regularization and a novel surrogate derivative for the spiking function. The proposed network proves to be more successful in using the recurrent connections on memory tasks. △ Less

Submitted 29 October, 2023; originally announced October 2023.

Hardware-aware Training Techniques for Improving Robustness of Ex-Situ Neural Network Transfer onto Passive TiO2 ReRAM Crossbars

Authors: Philippe Drolet, Raphaël Dawant, Victor Yon, Pierre-Antoine Mouny, Matthieu Valdenaire, Javier Arias Zapata, Pierre Gliech, Sean U. N. Wood, Serge Ecoffey, Fabien Alibart, Yann Beilliard, Dominique Drouin

Abstract: Passive resistive random access memory (ReRAM) crossbar arrays, a promising emerging technology used for analog matrix-vector multiplications, are far superior to their active (1T1R) counterparts in terms of the integration density. However, current transfers of neural network weights into the conductance state of the memory devices in the crossbar architecture are accompanied by significant losse… ▽ More Passive resistive random access memory (ReRAM) crossbar arrays, a promising emerging technology used for analog matrix-vector multiplications, are far superior to their active (1T1R) counterparts in terms of the integration density. However, current transfers of neural network weights into the conductance state of the memory devices in the crossbar architecture are accompanied by significant losses in precision due to hardware variabilities such as sneak path currents, biasing scheme effects and conductance tuning imprecision. In this work, training approaches that adapt techniques such as dropout, the reparametrization trick and regularization to TiO2 crossbar variabilities are proposed in order to generate models that are better adapted to their hardware transfers. The viability of this approach is demonstrated by comparing the outputs and precision of the proposed hardware-aware network with those of a regular fully connected network over a few thousand weight transfers using the half moons dataset in a simulation based on experimental data. For the neural network trained using the proposed hardware-aware method, 79.5% of the test set's data points can be classified with an accuracy of 95% or higher, while only 18.5% of the test set's data points can be classified with this accuracy by the regularly trained neural network. △ Less

Submitted 29 May, 2023; originally announced May 2023.

Comments: 15 pages, 11 figures

A tunable and versatile 28nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses

Authors: Joao Henrique Quintino Palhares, Yann Beilliard, Jury Sandrini, Franck Arnaud, Kevin Garello, Guillaume Prenat, Lorena Anghel, Fabien Alibart, Dominique Drouin, Philippe Galy

Abstract: In this work we report a study and a co-design methodology of an analog SNN crossbar output circuit designed in a 28nm FD-SOI technology node that comprises a tunable current attenuator and a leak-integrate and fire neurons that would enable the integration of emerging non-volatile memories (eNVMs) for synaptic arrays based on various technologies including phase change (PCRAM), oxide-based (OxRAM… ▽ More In this work we report a study and a co-design methodology of an analog SNN crossbar output circuit designed in a 28nm FD-SOI technology node that comprises a tunable current attenuator and a leak-integrate and fire neurons that would enable the integration of emerging non-volatile memories (eNVMs) for synaptic arrays based on various technologies including phase change (PCRAM), oxide-based (OxRAM), spin transfer and spin orbit torque magnetic memories (STT, SOT-MRAM). Circuit SPICE simulation results and eNVM experimental data are used to showcase and estimate the neurons fan-in for each type of eNVM considering the technology constraints and design trade-offs that set its limits such as membrane capacitance and supply voltage, etc. △ Less

Submitted 25 May, 2023; originally announced May 2023.

Comments: 7 pages, 6 figures

Voltage-Dependent Synaptic Plasticity (VDSP): Unsupervised probabilistic Hebbian plasticity rule based on neurons membrane potential

Authors: Nikhil Garg, Ismael Balafrej, Terrence C. Stewart, Jean Michel Portal, Marc Bocquet, Damien Querlioz, Dominique Drouin, Jean Rouat, Yann Beilliard, Fabien Alibart

Abstract: This study proposes voltage-dependent-synaptic plasticity (VDSP), a novel brain-inspired unsupervised local learning rule for the online implementation of Hebb's plasticity mechanism on neuromorphic hardware. The proposed VDSP learning rule updates the synaptic conductance on the spike of the postsynaptic neuron only, which reduces by a factor of two the number of updates with respect to standard… ▽ More This study proposes voltage-dependent-synaptic plasticity (VDSP), a novel brain-inspired unsupervised local learning rule for the online implementation of Hebb's plasticity mechanism on neuromorphic hardware. The proposed VDSP learning rule updates the synaptic conductance on the spike of the postsynaptic neuron only, which reduces by a factor of two the number of updates with respect to standard spike-timing-dependent plasticity (STDP). This update is dependent on the membrane potential of the presynaptic neuron, which is readily available as part of neuron implementation and hence does not require additional memory for storage. Moreover, the update is also regularized on synaptic weight and prevents explosion or vanishing of weights on repeated stimulation. Rigorous mathematical analysis is performed to draw an equivalence between VDSP and STDP. To validate the system-level performance of VDSP, we train a single-layer spiking neural network (SNN) for the recognition of handwritten digits. We report 85.01 $ \pm $ 0.76% (Mean $ \pm $ S.D.) accuracy for a network of 100 output neurons on the MNIST dataset. The performance improves when scaling the network size (89.93 $ \pm $ 0.41% for 400 output neurons, 90.56 $ \pm $ 0.27 for 500 neurons), which validates the applicability of the proposed learning rule for spatial pattern recognition tasks. Future work will consider more complicated tasks. Interestingly, the learning rule better adapts than STDP to the frequency of input signal and does not require hand-tuning of hyperparameters △ Less

Submitted 22 October, 2022; v1 submitted 21 March, 2022; originally announced March 2022.

Comments: Front. Neurosci., 21 October 2022 Sec. Neuromorphic Engineering

Journal ref: Front. Neurosci. 16:983950 (2022)

Memristor-based cryogenic programmable DC sources for scalable in-situ quantum-dot control

Authors: Pierre-Antoine Mouny, Yann Beilliard, Sébastien Graveline, Marc-Antoine Roux, Abdelouadoud El Mesoudy, Raphaël Dawant, Pierre Gliech, Serge Ecoffey, Fabien Alibart, Michel Pioro-Ladrière, Dominique Drouin

Abstract: Current quantum systems based on spin qubits are controlled by classical electronics located outside the cryostat at room temperature. This approach creates a major wiring bottleneck, which is one of the main roadblocks toward truly scalable quantum computers. Thus, we propose a scalable memristor-based programmable DC source that could be used to perform biasing of quantum dots inside of the cryo… ▽ More Current quantum systems based on spin qubits are controlled by classical electronics located outside the cryostat at room temperature. This approach creates a major wiring bottleneck, which is one of the main roadblocks toward truly scalable quantum computers. Thus, we propose a scalable memristor-based programmable DC source that could be used to perform biasing of quantum dots inside of the cryostat (i.e. in-situ). This novel cryogenic approach would enable to control the applied voltage on the electrostatic gates by programming the resistance of the memristors, thus storing in the latter the appropriate conditions to form the quantum dots. In this study, we first demonstrate multilevel resistance programming of a TiO2-based memristors at 4.2 K, an essential feature to achieve voltage tunability of the memristor-based DC source. We then report hardwarebased simulations of the electrical performance of the proposed DC source. A cryogenic TiO2-based memristor model fitted on our experimental data at 4.2 K was used to show a 1 V voltage range and 100 uV in-situ memristor-based DC source. Finally, we simulate the biasing of double quantum dots enabling sub-2 minutes in-situ charge stability diagrams. This demonstration is a first step towards more advanced cryogenic applications for resistive memories such as cryogenic control electronics for quantum computers. △ Less

Submitted 22 March, 2022; v1 submitted 14 March, 2022; originally announced March 2022.

Multi-terminal memristive devices enabling tunable synaptic plasticity in neuromorphic hardware: a mini-review

Authors: Yann Beilliard, Fabien Alibart

Abstract: Neuromorphic computing based on spiking neural networks has the potential to significantly improve on-line learning capabilities and energy efficiency of artificial intelligence, specially for edge computing. Recent progress in computational neuroscience have demonstrated the importance of heterosynaptic plasticity for network activity regulation and memorization. Implementing heterosynaptic plast… ▽ More Neuromorphic computing based on spiking neural networks has the potential to significantly improve on-line learning capabilities and energy efficiency of artificial intelligence, specially for edge computing. Recent progress in computational neuroscience have demonstrated the importance of heterosynaptic plasticity for network activity regulation and memorization. Implementing heterosynaptic plasticity in hardware is thus highly desirable, but important materials and engineering challenges remain, calling for breakthroughs in neuromorphic devices. In this mini-review, we propose an overview of the latest advances in multi-terminal memristive devices on silicon with tunable synaptic plasticity, enabling heterosynaptic plasticity in hardware. The scalability and compatibility of the devices with industrial complementary metal oxide semiconductor (CMOS) technologies are discussed. △ Less

Submitted 17 September, 2021; originally announced September 2021.

Comments: 13 pages, 1 figure, 1 table

Journal ref: Frontiers in Nanotechnology - Nanomaterials, 2021

Dendritic organic electrochemical transistors grown by electropolymerization for 3D neuromorphic engineering

Authors: Kamila Janzakova, Mahdi Ghazal, Ankush Kumar, Yannick Coffinier, Sébastien Pecqueur, Fabien Alibart

Abstract: One of the major limitation of standard top-down technologies used in today's neuromorphic engineering is their inability to map the 3D nature of biological brains. Here, we show how bipolar electropolymerization can be used to engineer 3D networks of PEDOT:PSS dendritic fibers. By controlling the growth conditions of the electropolymerized material, we investigate how dendritic fibers can reprodu… ▽ More One of the major limitation of standard top-down technologies used in today's neuromorphic engineering is their inability to map the 3D nature of biological brains. Here, we show how bipolar electropolymerization can be used to engineer 3D networks of PEDOT:PSS dendritic fibers. By controlling the growth conditions of the electropolymerized material, we investigate how dendritic fibers can reproduce structural plasticity by creating structures of controllable shape. We demonstrate gradual topologies evolution in a multi-electrode configuration. We conduct a detail electrical characterization of the PEDOT:PSS dendrites through DC and impedance spectroscopy measurements and we show how organic electrochemical transistors (OECT) can be realized with these structures. These measurements reveal that quasi-static and transient response of OECTs can be adjust by controlling dendrites' morphologies. The unique properties of organic dendrites are used to demonstrate short-term, long-term and structural plasticity, which are essential features required for future neuromorphic hardware development. △ Less

Submitted 12 July, 2021; originally announced July 2021.

Comments: 22 pages, 4 figures. K. Janzakova, M. Ghazal and A. Kumar contributed equally to this work

Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing

Authors: Abdelouadoud El Mesoudy, Gwénaëlle Lamri, Raphaël Dawant, Javier Arias-Zapata, Pierre Gliech, Yann Beilliard, Serge Ecoffey, Andreas Ruediger, Fabien Alibart, Dominique Drouin

Abstract: Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in developing memristor crossbar arrays has increased due to their ability to natively perform in-memory computing and fundamental synaptic operations required for… ▽ More Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in developing memristor crossbar arrays has increased due to their ability to natively perform in-memory computing and fundamental synaptic operations required for neural network implementation. For optimal efficiency, crossbar-based circuits need to be compatible with fabrication processes and materials of industrial CMOS technologies. Herein, we report a complete CMOS-compatible fabrication process of TiO2-based passive memristor crossbars with 700 nm wide electrodes. We show successful bottom electrode fabrication by a damascene process, resulting in an optimised topography and a surface roughness as low as 1.1 nm. DC sweeps and voltage pulse programming yield statistical results related to synaptic-like multilevel switching. Both cycle-to-cycle and device-to-device variability are investigated. Analogue programming of the conductance using sequences of 200 ns voltage pulses suggest that the fabricated memories have a multilevel capacity of at least 3 bits due to the cycle-to-cycle reproducibility. △ Less

Submitted 8 December, 2021; v1 submitted 22 June, 2021; originally announced June 2021.

Comments: 18 pages, 4 figures in main text, 5 figures in SI

Signals to Spikes for Neuromorphic Regulated Reservoir Computing and EMG Hand Gesture Recognition

Authors: Nikhil Garg, Ismael Balafrej, Yann Beilliard, Dominique Drouin, Fabien Alibart, Jean Rouat

Abstract: Surface electromyogram (sEMG) signals result from muscle movement and hence they are an ideal candidate for benchmarking event-driven sensing and computing. We propose a simple yet novel approach for optimizing the spike encoding algorithm's hyper-parameters inspired by the readout layer concept in reservoir computing. Using a simple machine learning algorithm after spike encoding, we report perfo… ▽ More Surface electromyogram (sEMG) signals result from muscle movement and hence they are an ideal candidate for benchmarking event-driven sensing and computing. We propose a simple yet novel approach for optimizing the spike encoding algorithm's hyper-parameters inspired by the readout layer concept in reservoir computing. Using a simple machine learning algorithm after spike encoding, we report performance higher than the state-of-the-art spiking neural networks on two open-source datasets for hand gesture recognition. The spike encoded data is processed through a spiking reservoir with a biologically inspired topology and neuron model. When trained with the unsupervised activity regulation CRITICAL algorithm to operate at the edge of chaos, the reservoir yields better performance than state-of-the-art convolutional neural networks. The reservoir performance with regulated activity was found to be 89.72% for the Roshambo EMG dataset and 70.6% for the EMG subset of sensor fusion dataset. Therefore, the biologically-inspired computing paradigm, which is known for being power efficient, also proves to have a great potential when compared with conventional AI algorithms. △ Less

Submitted 3 August, 2021; v1 submitted 9 June, 2021; originally announced June 2021.

Comments: Accepted to International Conference on Neuromorphic Systems (ICONS 2021)

AIDX: Adaptive Inference Scheme to Mitigate State-Drift in Memristive VMM Accelerators

Authors: Tony Liu, Amirali Amirsoleimani, Fabien Alibart, Serge Ecoffey, Dominique Drouin, Roman Genov

Abstract: An adaptive inference method for crossbar (AIDX) is presented based on an optimization scheme for adjusting the duration and amplitude of input voltage pulses. AIDX minimizes the long-term effects of memristance drift on artificial neural network accuracy. The sub-threshold behavior of memristor has been modeled and verified by comparing with fabricated device data. The proposed method has been ev… ▽ More An adaptive inference method for crossbar (AIDX) is presented based on an optimization scheme for adjusting the duration and amplitude of input voltage pulses. AIDX minimizes the long-term effects of memristance drift on artificial neural network accuracy. The sub-threshold behavior of memristor has been modeled and verified by comparing with fabricated device data. The proposed method has been evaluated by testing on different network structures and applications, e.g., image reconstruction and classification tasks. The results showed an average of 60% improvement in convolutional neural network (CNN) performance on CIFAR10 dataset after 10000 inference operations as well as 78.6% error reduction in image reconstruction. △ Less

Submitted 31 August, 2020; originally announced September 2020.

Comments: This paper is submitted to IEEE Transactions Circuits and Systems II: Express Briefs

Observation of Highly Nonlinear Resistive Switching of Al2O3/TiO2-x Memristors at Cryogenic Temperature (1.5 K)

Authors: Yann Beilliard, François Paquette, Frédéric Brousseau, Serge Ecoffey, Fabien Alibart, Dominique Drouin

Abstract: In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K down to 1.5 K. The I-V curves exhibit negative differential resistance effects between 130 and 1.5 K, attributed to a metal-insulator transition (MIT) of the Ti4O7 conductive filament. The resulting highly nonlinear beha… ▽ More In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K down to 1.5 K. The I-V curves exhibit negative differential resistance effects between 130 and 1.5 K, attributed to a metal-insulator transition (MIT) of the Ti4O7 conductive filament. The resulting highly nonlinear behavior is associated to a maximum ION/IOFF ratio of 84 at 1.5 K, paving the way to selector-free cryogenic passive crossbars. Finally, temperature-dependant thermal activation energies related to the conductance at low bias (20 mV) are extracted for memristors in low resistance state, suggesting hopping-type conduction mechanisms. △ Less

Submitted 10 September, 2019; v1 submitted 15 August, 2019; originally announced August 2019.

Comments: 4 pages, 4 figures, IEEE 14th Nanotechnology Materials & Devices Conference (NMDC 2019)

Journal ref: AIP Advances 10, 025305 (2020)

Light-stimulable molecules/nanoparticles networks for switchable logical functions and reservoir computing

Authors: Y. Viero, D. Guerin, A. Vladyka, F. Alibart, S. Lenfant, M. Calame, D. Vuillaume

Abstract: We report the fabrication and electron transport properties of nanoparticles self-assembled networks (NPSAN) of molecular switches (azobenzene derivatives) interconnected by Au nanoparticles, and we demonstrate optically-driven switchable logical operations associated to the light controlled switching of the molecules. The switching yield is up to 74%. We also demonstrate that these NPSANs are pro… ▽ More We report the fabrication and electron transport properties of nanoparticles self-assembled networks (NPSAN) of molecular switches (azobenzene derivatives) interconnected by Au nanoparticles, and we demonstrate optically-driven switchable logical operations associated to the light controlled switching of the molecules. The switching yield is up to 74%. We also demonstrate that these NPSANs are prone for light-stimulable reservoir computing. The complex non-linearity of electron transport and dynamics in these highly connected and recurrent networks of molecular junctions exhibit rich high harmonics generation (HHG) required for reservoir computing (RC) approaches. Logical functions and HHG are controlled by the isomerization of the molecules upon light illumination. These results, without direct analogs in semiconductor devices, open new perspectives to molecular electronics in unconventional computing. △ Less

Submitted 7 August, 2018; originally announced August 2018.

Journal ref: Adv. Func. Mater. 28, 1801506, 2018

Neuromorphic Time-Dependent Pattern Classification with Organic Electrochemical Transistor Arrays

Authors: Sebastien Pecqueur, Maurizio Mastropasqua Talamo, David Guerin, Philippe Blanchard, Jean Roncali, Dominique Vuillaume, Fabien Alibart

Abstract: Based on bottom-up assembly of highly variable neural cells units, the nervous system can reach unequalled level of performances with respect to standard materials and devices used in microelectronic. Reproducing these basic concepts in hardware could potentially revolutionize materials and device engineering which are used for information processing. Here, we present an innovative approach that r… ▽ More Based on bottom-up assembly of highly variable neural cells units, the nervous system can reach unequalled level of performances with respect to standard materials and devices used in microelectronic. Reproducing these basic concepts in hardware could potentially revolutionize materials and device engineering which are used for information processing. Here, we present an innovative approach that relies on both iono-electronic materials and intrinsic device physics to show pattern classification out of a 12-unit bio-sensing array. We use the reservoir computing and learning concept to demonstrate relevant computing based on the ionic dynamics in 400-nm channel-length organic electrochemical transistor (OECT). We show that this approach copes efficiently with the high level of variability obtained by bottom-up fabrication using a new electropolymerizable polymer, which enables iono-electronic device functionality and material stability in the electrolyte. We investigate the effect of the array size and variability on the performances for a real-time classification task paving the way to new embedded sensing and processing approaches. △ Less

Submitted 12 June, 2018; originally announced June 2018.

Comments: Accepted manuscript, Adv. Electron. Mater

Journal ref: Adv. Electron. Mater., 4, 1800166 (2018)

A Reconfigurable FIR Filter with Memristor-Based Weights

Authors: F. Merrikh Bayat, F. Alibart, L. Gao, D. B. Strukov

Abstract: We report on experimental demonstration of a mixed-signal 6-tap finite-impulse response (FIR) filter in which weights are implemented with titanium dioxide memristive devices. In the proposed design weight of a tap is stored with a relatively high precision in a memristive device that can be configured in field. Such approach enables efficient implementation of the most critical operation of an FI… ▽ More We report on experimental demonstration of a mixed-signal 6-tap finite-impulse response (FIR) filter in which weights are implemented with titanium dioxide memristive devices. In the proposed design weight of a tap is stored with a relatively high precision in a memristive device that can be configured in field. Such approach enables efficient implementation of the most critical operation of an FIR filter, i.e. multiplication of the input signal with the tap weights and summation of the products from taps, in analog domain. As a result, the proposed design, when implemented with fully integrated hybrid CMOS/memristor circuit, is expected to be much more compact and energy efficient as compared to the state-of-the-art approaches. △ Less

Submitted 18 August, 2016; originally announced August 2016.

Comments: 4 pages

Exploiting the Short-term to Long-term Plasticity Transition in Memristive Nanodevice Learning Architectures

Authors: Christopher H. Bennett, Selina La Barbera, Adrien F. Vincent, Fabien Alibart, Damien Querlioz

Abstract: Memristive nanodevices offer new frontiers for computing systems that unite arithmetic and memory operations on-chip. Here, we explore the integration of electrochemical metallization cell (ECM) nanodevices with tunable filamentary switching in nanoscale learning systems. Such devices offer a natural transition between short-term plasticity (STP) and long-term plasticity (LTP). In this work, we sh… ▽ More Memristive nanodevices offer new frontiers for computing systems that unite arithmetic and memory operations on-chip. Here, we explore the integration of electrochemical metallization cell (ECM) nanodevices with tunable filamentary switching in nanoscale learning systems. Such devices offer a natural transition between short-term plasticity (STP) and long-term plasticity (LTP). In this work, we show that this property can be exploited to efficiently solve noisy classification tasks. A single crossbar learning scheme is first introduced and evaluated. Perfect classification is possible only for simple input patterns, within critical timing parameters, and when device variability is weak. To overcome these limitations, a dual-crossbar learning system partly inspired by the extreme learning machine (ELM) approach is then introduced. This approach outperforms a conventional ELM-inspired system when the first layer is imprinted before training and testing, and especially so when variability in device timing evolution is considered: variability is therefore transformed from an issue to a feature. In attempting to classify the MNIST database under the same conditions, conventional ELM obtains 84% classification, the imprinted, uniform device system obtains 88% classification, and the imprinted, variable device system reaches 92% classification. We discuss benefits and drawbacks of both systems in terms of energy, complexity, area imprint, and speed. All these results highlight that tuning and exploiting intrinsic device timing parameters may be of central interest to future bio-inspired approximate computing systems. △ Less

Submitted 27 June, 2016; originally announced June 2016.

Comments: 9 pages, 8 figures. To be presented July 2016 at the International Joint Conference on Neural Networks (IJCNN), Vancouver, BC, Canada

Low voltage and time constant organic synapse-transistor

Authors: Simon Desbief, Adrica Kyndiah, David Guerin, Denis Gentili, Mauro Murgia, Stéphane Lenfant, Fabien Alibart, Tobias Cramer, Fabio Biscarini, Dominique Vuillaume

Abstract: We report on an artificial synapse, an organic synapse-transistor (synapstor) working at 1 volt and with a typical response time in the range 100-200 ms. This device (also called NOMFET, Nanoparticle Organic Memory Field Effect Transistor) combines a memory and a transistor effect in a single device. We demonstrate that short-term plasticity (STP), a typical synaptic behavior, is observed when sti… ▽ More We report on an artificial synapse, an organic synapse-transistor (synapstor) working at 1 volt and with a typical response time in the range 100-200 ms. This device (also called NOMFET, Nanoparticle Organic Memory Field Effect Transistor) combines a memory and a transistor effect in a single device. We demonstrate that short-term plasticity (STP), a typical synaptic behavior, is observed when stimulating the device with input spikes of 1 volt. Both significant facilitating and depressing behaviors of this artificial synapse are observed with a relative amplitude of about 50% and a dynamic response < 200 ms. From a series of in-situ experiments, i.e. measuring the current-voltage characteristic curves in-situ and in real time, during the growth of the pentacene over a network of gold nanoparticles, we elucidate these results by analyzing the relationship between the organic film morphology and the transport properties. This synapstor works at a low energy of about 2 nJ/spike. We discuss the implications of these results for the development of neuro-inspired computing architectures and interfacing with biological neurons. △ Less

Submitted 16 May, 2015; originally announced May 2015.

Comments: Full paper with supporting information

Journal ref: Organic Electronics 21, 47-53 (2015)

Pavlov's dog associative learning demonstrated on synaptic-like organic transistors

Authors: O. Bichler, W. Zhao, F. Alibart, S. Pleutin, S. Lenfant, D. Vuillaume, C. Gamrat

Abstract: In this letter, we present an original demonstration of an associative learning neural network inspired by the famous Pavlov's dogs experiment. A single nanoparticle organic memory field effect transistor (NOMFET) is used to implement each synapse. We show how the physical properties of this dynamic memristive device can be used to perform low power write operations for the learning and implement… ▽ More In this letter, we present an original demonstration of an associative learning neural network inspired by the famous Pavlov's dogs experiment. A single nanoparticle organic memory field effect transistor (NOMFET) is used to implement each synapse. We show how the physical properties of this dynamic memristive device can be used to perform low power write operations for the learning and implement short-term association using temporal coding and spike timing dependent plasticity based learning. An electronic circuit was built to validate the proposed learning scheme with packaged devices, with good reproducibility despite the complex synaptic-like dynamic of the NOMFET in pulse regime. △ Less

Submitted 13 February, 2013; originally announced February 2013.

Journal ref: Neural Computation 25(2), 549-566 (2013)

A memristive nanoparticle/organic hybrid synapstor for neuro-inspired computing

Authors: F. Alibart, S. Pleutin, O. Bichler, C. Gamrat, T. Serrano-Gotarredona, B. Linares-Barranco, D. Vuillaume

Abstract: A large effort is devoted to the research of new computing paradigms associated to innovative nanotechnologies that should complement and/or propose alternative solutions to the classical Von Neumann/CMOS association. Among various propositions, Spiking Neural Network (SNN) seems a valid candidate. (i) In terms of functions, SNN using relative spike timing for information coding are deemed to be t… ▽ More A large effort is devoted to the research of new computing paradigms associated to innovative nanotechnologies that should complement and/or propose alternative solutions to the classical Von Neumann/CMOS association. Among various propositions, Spiking Neural Network (SNN) seems a valid candidate. (i) In terms of functions, SNN using relative spike timing for information coding are deemed to be the most effective at taking inspiration from the brain to allow fast and efficient processing of information for complex tasks in recognition or classification. (ii) In terms of technology, SNN may be able to benefit the most from nanodevices, because SNN architectures are intrinsically tolerant to defective devices and performance variability. Here we demonstrate Spike-Timing-Dependent Plasticity (STDP), a basic and primordial learning function in the brain, with a new class of synapstor (synapse-transistor), called Nanoparticle Organic Memory Field Effect Transistor (NOMFET). We show that this learning function is obtained with a simple hybrid material made of the self-assembly of gold nanoparticles and organic semiconductor thin films. Beyond mimicking biological synapses, we also demonstrate how the shape of the applied spikes can tailor the STDP learning function. Moreover, the experiments and modeling show that this synapstor is a memristive device. Finally, these synapstors are successfully coupled with a CMOS platform emulating the pre- and post-synaptic neurons, and a behavioral macro-model is developed on usual device simulator. △ Less

Submitted 14 December, 2011; originally announced December 2011.

Comments: A single pdf file, with the full paper and the supplementary information; Adv. Func. Mater., on line Dec. 13 (2011)

Journal ref: Adv. Func. Mater., 22, 609-616 (2012)

High-Precision Tuning of State for Memristive Devices by Adaptable Variation-Tolerant Algorithm

Authors: Fabien Alibart, Ligang Gao, Brian Hoskins, Dmitri Strukov

Abstract: Using memristive properties common for the titanium dioxide thin film devices, we designed a simple write algorithm to tune device conductance at a specific bias point to 1% relative accuracy (which is roughly equivalent to 7-bit precision) within its dynamic range even in the presence of large variations in switching behavior. The high precision state is nonvolatile and the results are likely to… ▽ More Using memristive properties common for the titanium dioxide thin film devices, we designed a simple write algorithm to tune device conductance at a specific bias point to 1% relative accuracy (which is roughly equivalent to 7-bit precision) within its dynamic range even in the presence of large variations in switching behavior. The high precision state is nonvolatile and the results are likely to be sustained for nanoscale memristive devices because of the inherent filamentary nature of the resistive switching. The proposed functionality of memristive devices is especially attractive for analog computing with low precision data. As one representative example we demonstrate hybrid circuitry consisting of CMOS summing amplifier and two memristive devices to perform analog multiply and accumulate computation, which is a typical bottleneck operation in information processing. △ Less

Submitted 6 October, 2011; originally announced October 2011.

Comments: 20 pages, 6 figures

Journal ref: Nanotechnology, vol. 23, art. 075201, 2012