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Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate
Authors:
Zijian Zhao,
Sola Woo,
Khandker Akif Aabrar,
Sharadindu Gopal Kirtania,
Zhouhang Jiang,
Shan Deng,
Yi Xiao,
Halid Mulaosmanovic,
Stefan Duenkel,
Dominik Kleimaier,
Steven Soss,
Sven Beyer,
Rajiv Joshi,
Scott Meninger,
Mohamed Mohamed,
Kijoon Kim,
Jongho Woo,
Suhwan Lim,
Kwangsoo Kim,
Wanki Kim,
Daewon Ha,
Vijaykrishnan Narayanan,
Suman Datta,
Shimeng Yu,
Kai Ni
Abstract:
In this work, we propose a dual-port cell design to address the pass disturb in vertical NAND storage, which can pass signals through a dedicated and string-compatible pass gate. We demonstrate that: i) the pass disturb-free feature originates from weakening of the depolarization field by the pass bias at the high-${V}_{TH}$ (HVT) state and the screening of the applied field by channel at the low-…
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In this work, we propose a dual-port cell design to address the pass disturb in vertical NAND storage, which can pass signals through a dedicated and string-compatible pass gate. We demonstrate that: i) the pass disturb-free feature originates from weakening of the depolarization field by the pass bias at the high-${V}_{TH}$ (HVT) state and the screening of the applied field by channel at the low-${V}_{TH}$ (LVT) state; ii) combined simulations and experimental demonstrations of dual-port design verify the disturb-free operation in a NAND string, overcoming a key challenge in single-port designs; iii) the proposed design can be incorporated in a highly scaled vertical NAND FeFET string and the pass gate can be incorporated into the existing 3D NAND with the negligible overhead of the pass gate interconnection through a global bottom pass gate contact in the substrate.
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Submitted 7 March, 2024;
originally announced March 2024.
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Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET
Authors:
Zijian Zhao,
Shan Deng,
Swetaki Chatterjee,
Zhouhang Jiang,
Muhammad Shaffatul Islam,
Yi Xiao,
Yixin Xu,
Scott Meninger,
Mohamed Mohamed,
Rajiv Joshi,
Yogesh Singh Chauhan,
Halid Mulaosmanovic,
Stefan Duenkel,
Dominik Kleimaier,
Sven Beyer,
Hussam Amrouch,
Vijaykrishnan Narayanan,
Kai Ni
Abstract:
Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially to the high-threshold voltage (VTH) state as the retention energy barrier is reduced by the applied read bias. To address both issues, we propose to adopt a read disturb-free dual-port FeFET w…
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Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially to the high-threshold voltage (VTH) state as the retention energy barrier is reduced by the applied read bias. To address both issues, we propose to adopt a read disturb-free dual-port FeFET where write is performed on the gate featuring a ferroelectric layer and the read is done on a separate gate featuring a non-ferroelectric dielectric. Combining the unique structure and the separate read gate, read disturb is eliminated as the applied field is aligned with polarization in the high-VTH state and thus improving its stability, while it is screened by the channel inversion charge and exerts no negative impact on the low-VTH state stability. Comprehensive theoretical and experimental validation have been performed on fully-depleted silicon-on-insulator (FDSOI) FeFETs integrated on 22 nm platform, which intrinsically has dual ports with its buried oxide layer acting as the non-ferroelectric dielectric. Novel applications that can exploit the proposed dual-port FeFET are proposed and experimentally demonstrated for the first time, including FPGA that harnesses its read disturb-free feature and tunable analog electronics (e.g., frequency tunable ring oscillator in this work) leveraging the separated write and read paths.
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Submitted 2 May, 2023;
originally announced May 2023.
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Ferroelectric FET based Context-Switching FPGA Enabling Dynamic Reconfiguration for Adaptive Deep Learning Machines
Authors:
Yixin Xu,
Zijian Zhao,
Yi Xiao,
Tongguang Yu,
Halid Mulaosmanovic,
Dominik Kleimaier,
Stefan Duenkel,
Sven Beyer,
Xiao Gong,
Rajiv Joshi,
X. Sharon Hu,
Shixian Wen,
Amanda Sofie Rios,
Kiran Lekkala,
Laurent Itti,
Eric Homan,
Sumitha George,
Vijaykrishnan Narayanan,
Kai Ni
Abstract:
Field Programmable Gate Array (FPGA) is widely used in acceleration of deep learning applications because of its reconfigurability, flexibility, and fast time-to-market. However, conventional FPGA suffers from the tradeoff between chip area and reconfiguration latency, making efficient FPGA accelerations that require switching between multiple configurations still elusive. In this paper, we perfor…
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Field Programmable Gate Array (FPGA) is widely used in acceleration of deep learning applications because of its reconfigurability, flexibility, and fast time-to-market. However, conventional FPGA suffers from the tradeoff between chip area and reconfiguration latency, making efficient FPGA accelerations that require switching between multiple configurations still elusive. In this paper, we perform technology-circuit-architecture co-design to break this tradeoff with no additional area cost and lower power consumption compared with conventional designs while providing dynamic reconfiguration, which can hide the reconfiguration time behind the execution time. Leveraging the intrinsic transistor structure and non-volatility of ferroelectric FET (FeFET), compact FPGA primitives are proposed and experimentally verified, including 1FeFET look-up table (LUT) cell, 1FeFET routing cell for connection blocks (CBs) and switch boxes (SBs). To support dynamic reconfiguration, two local copies of primitives are placed in parallel, which enables loading of arbitrary configuration without interrupting the active configuration execution. A comprehensive evaluation shows that compared with the SRAM-based FPGA, our dynamic reconfiguration design shows 63.0%/71.1% reduction in LUT/CB area and 82.7%/53.6% reduction in CB/SB power consumption with minimal penalty in the critical path delay (9.6%). We further implement a Super-Sub network model to show the benefit from the context-switching capability of our design. We also evaluate the timing performance of our design over conventional FPGA in various application scenarios. In one scenario that users switch between two preloaded configurations, our design yields significant time saving by 78.7% on average. In the other scenario of implementing multiple configurations with dynamic reconfiguration, our design offers time saving of 20.3% on average.
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Submitted 30 November, 2022;
originally announced December 2022.
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Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing
Authors:
Benjamin Max,
Michael Hoffmann,
Halid Mulaosmanovic,
Stefan Slesazeck,
Thomas Mikolajick
Abstract:
Ferroelectric tunnel junctions (FTJ) based on hafnium zirconium oxide (Hf1-xZrxO2; HZO) are a promising candidate for future applications, such as low-power memories and neuromorphic computing. The tunneling electroresistance (TER) is tunable through the polarization state of the HZO film. To circumvent the challenge of fabricating thin ferroelectric HZO layers in the tunneling range of 1-3 nm ran…
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Ferroelectric tunnel junctions (FTJ) based on hafnium zirconium oxide (Hf1-xZrxO2; HZO) are a promising candidate for future applications, such as low-power memories and neuromorphic computing. The tunneling electroresistance (TER) is tunable through the polarization state of the HZO film. To circumvent the challenge of fabricating thin ferroelectric HZO layers in the tunneling range of 1-3 nm range, ferroelectric/dielectric double layer sandwiched between two symmetric metal electrodes are used. Due to the decoupling of the ferroelectric polarization storage layer and a dielectric tunneling layer with a higher bandgap, a significant TER ratio between the two polarization states is obtained. By exploiting previously reported switching behaviour and the gradual tunability of the resistance, FTJs can be used as potential candidates for the emulation of synapses for neuromorphic computing in spiking neural networks. The implementation of two major components of a synapse are shown: long term depression/potentiation by varying the amplitude/width/number of voltage pulses applied to the artificial FTJ synapse, and spike-timing-dependent-plasticity curves by applying time-delayed voltages at each electrode. These experimental findings show the potential of spiking neural networks and neuromorphic computing that can be implemented with hafnia-based FTJs.
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Submitted 2 July, 2021;
originally announced July 2021.
