TDRAM: Tag-enhanced DRAM for Efficient Caching
Authors:
Maryam Babaie,
Ayaz Akram,
Wendy Elsasser,
Brent Haukness,
Michael Miller,
Taeksang Song,
Thomas Vogelsang,
Steven Woo,
Jason Lowe-Power
Abstract:
As SRAM-based caches are hitting a scaling wall, manufacturers are integrating DRAM-based caches into system designs to continue increasing cache sizes. While DRAM caches can improve the performance of memory systems, existing DRAM cache designs suffer from high miss penalties, wasted data movement, and interference between misses and demand requests. In this paper, we propose TDRAM, a novel DRAM…
▽ More
As SRAM-based caches are hitting a scaling wall, manufacturers are integrating DRAM-based caches into system designs to continue increasing cache sizes. While DRAM caches can improve the performance of memory systems, existing DRAM cache designs suffer from high miss penalties, wasted data movement, and interference between misses and demand requests. In this paper, we propose TDRAM, a novel DRAM microarchitecture tailored for caching. TDRAM enhances HBM3 by adding a set of small low-latency mats to store tags and metadata on the same die as the data mats. These mats enable fast parallel tag and data access, on-DRAM-die tag comparison, and conditional data response based on comparison result (reducing wasted data transfers) akin to SRAM caches mechanism. TDRAM further optimizes the hit and miss latencies by performing opportunistic early tag probing. Moreover, TDRAM introduces a flush buffer to store conflicting dirty data on write misses, eliminating turnaround delays on data bus. We evaluate TDRAM using a full-system simulator and a set of HPC workloads with large memory footprints showing TDRAM provides at least 2.6$\times$ faster tag check, 1.2$\times$ speedup, and 21% less energy consumption, compared to the state-of-the-art commercial and research designs.
△ Less
Submitted 22 April, 2024;
originally announced April 2024.
Unraveling codes: fast, robust, beyond-bound error correction for DRAM
Authors:
Mike Hamburg,
Eric Linstadt,
Danny Moore,
Thomas Vogelsang
Abstract:
Generalized Reed-Solomon (RS) codes are a common choice for efficient, reliable error correction in memory and communications systems. These codes add $2t$ extra parity symbols to a block of memory, and can efficiently and reliably correct up to $t$ symbol errors in that block. Decoding is possible beyond this bound, but it is imperfectly reliable and often computationally expensive. Beyond-bound…
▽ More
Generalized Reed-Solomon (RS) codes are a common choice for efficient, reliable error correction in memory and communications systems. These codes add $2t$ extra parity symbols to a block of memory, and can efficiently and reliably correct up to $t$ symbol errors in that block. Decoding is possible beyond this bound, but it is imperfectly reliable and often computationally expensive. Beyond-bound decoding is an important problem to solve for error-correcting Dynamic Random Access Memory (DRAM). These memories are often designed so that each access touches two extra memory devices, so that a failure in any one device can be corrected. But system architectures increasingly require DRAM to store metadata in addition to user data. When the metadata replaces parity data, a single-device failure is then beyond-bound. An error-correction system can either protect each access with a single RS code, or divide it into several segments protected with a shorter code, usually in an Interleaved Reed-Solomon (IRS) configuration. The full-block RS approach is more reliable, both at correcting errors and at preventing silent data corruption (SDC). The IRS option is faster, and is especially efficient at beyond-bound correction of single- or double-device failures. Here we describe a new family of "unraveling" Reed-Solomon codes that bridges the gap between these options. Our codes are full-block generalized RS codes, but they can also be decoded using an IRS decoder. As a result, they combine the speed and beyond-bound correction capabilities of interleaved codes with the robustness of full-block codes, including the ability of the latter to reliably correct failures across multiple devices. We show that unraveling codes are an especially good fit for high-reliability DRAM error correction.
△ Less
Submitted 27 May, 2024; v1 submitted 19 January, 2024;
originally announced January 2024.
